M 3101 Search Results

74S189

Abstract: 82S25 N3101A N74S189 N74S189N N82S25 N82S25N S54S189 S82S25
Contextual Info: BIPOLAR M EM O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R e a d /W rite R a n d o m A c c e s s • • • • M e m o rie s is id e a l fo r u se in s c r a tc h p a d a n d

Contextual Info: Series ITS ITS 3101 A M and ITS 4101 A (M) ITS 3101 R (M) and ITS 4101 R (M) In-Line Cylindrical Receptacle Assembly with Backshell for Use with Metric Cable Glands ITS 31 01 A 20-27 P Y M25 XXX Reverse Bayonet Coupling Mod Code Option (See Table II) Contact Type

M48x1

Contextual Info: Series ITS ITS 3101 A M and ITS 4101 A (M) ITS 3101 R (M) and ITS 4101 R (M) In-Line Cylindrical Receptacle Assembly with Backshell for Use with Metric Cable Glands ITS 31 01 A 20-27 P Y M25 XXX Reverse Bayonet Coupling Mod Code Option (See Table II) Contact Type

shift register ttl

Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
Contextual Info: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L

Contextual Info: Han-Modular Number of contacts 12 Han® DD-module Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Crimp terminal Order contacts separately M 09 14 012 3001 Han Modular F 09 14 012 3101 M F Contact arrangement View from termination side

Contextual Info: Modular Coupler Jack Unshielded 3101 Series M aterial an d F in ish : * Housing: Standard M aterial: Glass Filled P olyester U L 9 4 V -0 . Standard Color: Black. * C ontact: 0 .3 5 m n n (0 .0 1 4 ” ) Thickness P hosphor Bronze. Gold Plating over Nickel.

Contextual Info: Han-Modular 250 V 10 A Number of contacts 12 Han DD®-module Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Crimp terminal Order contacts separately M 09 14 012 3001 Han Modular F 09 14 012 3101 M F Contact arrangement View from termination side

Contextual Info: Han-Modular Number of contacts 8 Han® EE-module Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Crimp terminal Order contacts separately M 09 14 008 3001 Han Modular F 09 14 008 3101 Profile for contact removal M F Contact arrangement View from termination side

09 14 006 3101

Abstract: U006
Contextual Info: Alle Hechte Vorbehalten/ ÁII rights resem i 4 A ffl- H a r f E module 09 14 006 3101 m co m 16A 500V 6kV 3 ^ 600V$ XXXXXXXXX « HARTING « I til Diiensions ¡n m Original Size DIN A i Techn. Character. Dat. Detail. Insp. Nicht tolerierte halle/Fm siie tolerances

Contextual Info: Han-Modular Number of contacts 6 Han® E-module Part No. Identification Male insert M Female insert (F) Drawing Dimensions in mm Crimp terminal Order contacts separately M 09 14 006 3001 Han Modular F 09 14 006 3101 Profile for contact removal M F Contact arrangement View from termination side

74S189

Abstract: 74818 s189 82S25
Contextual Info: BIPOLAR M E M O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.C.), 54/74S189 (T.S.) ABSOLUTE MAXIMUM RATINGS RATIN G PARAMETER1 Vcc S u p p ly vo ltage V in Input voltage +7 Vdc + 5 .5 Vdc Vdc O u tp u t vo ltage V oh

Contextual Info: Alle Hechte Vorbehalten/ ÁII rights resem i 4 A = _ -ÍT X H a rf EE module m 09 U 008 3101 16A 400V 6kV 3 ^ \6 0 0 V c \l m —IJ - L HARTING LLT « i -[Q- xxxxxxxxx = 1 -1 II ^ 3 5 .8 « til Diiensions in m Original Size DIN A 4 Techn. Character.

jcnr

Contextual Info: Han High Density Quintax HARTING § % \ Han® Quintax contacts Part number Male insert M Female insert (F) Identification Drawing Dimensions in mm 29,3 "ip j'cnr 09 14 002 3001 m 09 14 002 3101 2 9.3 Contact arrangement V ie w f r o m te rm in a tio n s id e

82S25

Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.

Contextual Info: Alle Hechle Vorbehalten/ A ÁII rights rise m i 4 U.6 U lì HarfDDD module 09 U 017 3101 10A 160V 2 ,5kV 3 ^ 250V O vJ £=3 HARTING xxxxxxxxx * 3 - All Diiensions in m Original Size DIN Í t Techn. Character. Dat. Detail. Insp. Stand. Mod. É Dat. Name Nicht tolerierte Halle/Free site M erm es

LCD CMC 116 L01

Abstract: tr/LCD CMC 116 L01
Contextual Info: CHAPTER 1 OUTLINE 1.1 Features O Reduced EMI Electro Magnetic Interference noise compared to the existing ¿¡PD78064 subseries O On-chip high-capacity ROM and RAM Type P ro g ra m M e m o ry P a rt N u m b e r (R O M ) ,u P D 78 064 B 3 2 K b yte s D a ta M e m o ry

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

Contextual Info: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory

93905

Contextual Info: iP M T N ü M a C K lM tO S - b Ö ti Oroiti de reproduction BERG g .O ItT WET. E1ECTROMCS. ï » nrm n « CONTOUNATNM M M O V - e * Q O V E S r e * M » S D M iO N lo M S I . . j L . .' 1 > D .0 I» 7 K f. kt ftM TIP Proprie*« <le aERG I,- * ] ? BERC ElECTWNCS

74589

Abstract: GL 3101 82S25 74S189 74S89 N82S25 s189 N3101A 54/74S89
Contextual Info: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS This fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high -spe ed b u ffe r m em ory ap p lica tio n s. • Scratch pad memory • Buffer memory

Contextual Info: UPPER PORT 1000pF 2 KV CH GND J8 M X 4 J7 M X4+ J6 M X 2 J5 M X 3 J4 M X3+ J3 M X2+ J2 MX1 — J1 Bel Stewart Connector 11118 Susquehanna Trail, South Glen Rock, Pa 17327-9199 717.234.7512 THIS DRAWING AND THE SUBJECT MATTER SHOWN THEREON ARE CONFIDENTIAL AND PROPERTY DF BEL STEWART CONNECTOR

4170B

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process

CA3130S

Abstract: CA3160AT CA3160 12 VOLT 2 AMP regulator ca3160e CA3160AS CA3140 voltage comparator ca3160t
Contextual Info: har ® CA3160, CA3160A S E M I C O N D U C T O R J M • ■ 4M H z, BiM O S O perational A m plifier w ith M O SFET Input/C M O S O utput November 1996 Features Description • M OSFET Input Stage Provides: The CA3160A and CA3160 are integrated circuit operational

Contextual Info: Alle Rechte vorbehalfen/ 2 Ml rights reserrei 3 4 5 6 A = _ - T H - H a r f EE m odule m 09 U 008 3101 16A A00V 6kV 3 c \l ^ \6 0 0 V m _IJ_L LLT 3 HARTING -Q J-x x x x x x x x x = 1 - n z o ^ 35.8 n y \ A ll D iie n sio n s in •■