M 615 TRANSISTOR Search Results

IC LM 317

Abstract: BUH615 F312
Contextual Info: r = 7 ^ 7# S G S -T H O M S O N M@IM[I[L[I2ra M!ll £l BUH 615 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR

Contextual Info: S IE M E N S SFH610A/611A/615 A/617 A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Current Transfer Ratios 110 mA: 40-320% a< 1 mA: 60% typical (>13 • Low CTR Degradation • Qood CTR Linearity Dapandlng on Forward Current • Withstand Test Voltage, 5300 VACrms

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

b0615

Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V

BD 61 9 40

Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

Common collector 8 bit darlington

Abstract: TB62705AF 16-Bit sipo Shift Register 8ch FET driver SOP18 TD62M8601 DIP18 darlington buffer array push-pull driver led constant current driver 500mA 8ch driver SOP18
Contextual Info: A4 Type No. Function Output Output No. of Clamp Output Voltage Current Circuite V (*A) Diode Input RasMor (O) Recommended System Power Supply Package TD62591AP Single transistor array (emitter common) 8 50 200 Not provided Free DIP 18 TD62592AP Single transistor array (emitter common)

dip16

Abstract: TD62382AP TD62003 TD62553 DIP-16 TD62382 DIP18 BF transistor series M 615 transistor td62503p
Contextual Info: Transistor Array/Interface Driver Series Typ« No. Funcion m No. of Output Oufcut Voltag» Circuits Clamp V ceìsusKV DM* TD62001P/AP/F/AF Darlington driver emitter common) 7 TD62002P/AP/F/A F Darlington driver (emitter common) 7 TD62003P/PA/AP/APA/F/FB/AF

6DI15S-050

Abstract: 6di15s 6DI20MS-050 1DI400MN-050 2di50z application 6DI15MS-050 6di20ms M117 M106 M115
Contextual Info: 3 BIPOLAR TR ANSISTO R M O D ULES Ratings and Specifications tj H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.

6DI15S-050

Abstract: M106 M115 M210 6DI20MS-050 1di200 1di400
Contextual Info: BIPOLAR TRANSISTO R M O D U LES Ratings and Specifications 3 H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

d947

Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
Contextual Info: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages

transistor GR 345

Abstract: TIC COL 02 25CC SD1495 SD1495-3 A 798 transistor
Contextual Info: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1495-3 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY

eltec

Contextual Info: ROHM Corporation representatives US and Canada Alabama (Missouri) Strategic Marketing, Huntsville, AL (205) 464-0490 Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Arizona (New Mexico, Nevada) Focus Sales, Inc., Taunton, MA (800) 933-2771

MJD44H11

Contextual Info: rZ Z SGS-THOMSON MJD44H11 M»ILi gT! ËOÛS MJD45H11 COMPLEMENTARY SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW COLLECTOR-EMITTER SATURATION VOLTAGE . FAST SWITCHING SPEED APPLICATIONS • GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIER

eltec

Contextual Info: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222

rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm

Contextual Info: ROHM Group Rohm Co., Ltd. Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.

TRANSISTOR JG 92

Abstract: IFR 730
Contextual Info: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY

Contextual Info: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

400VF

Abstract: npn 10a 800v 2SC3461
Contextual Info: I Ordering num ber:EN 1596C _2SC3461 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.

Siemens sfh615 optocoupler

Contextual Info: SIEMENS FEATURES SFH 610/611/615 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches mm .307 (7 .8) _ .291 (7.4) * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward

MG50M2CK2

Contextual Info: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)

TO236

Abstract: MMBTH30 to-236
Contextual Info: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25