M 726 190 Search Results
M 726 190 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SNJ55LVDS31J |
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Quad LVDS Transmitter 16-CDIP -55 to 125 |
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SNJ55LVDS32W |
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Quad LVDS Receiver 16-CFP -55 to 125 |
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V62/06677-02XE |
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Enhanced Product 1:10 Lvds Serdes Receiver 100-660 Mbps 28-SSOP -55 to 125 |
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SN65LVDM050QDQ1 |
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Automotive Catalog Dual LVDS Transceiver 16-SOIC -40 to 125 |
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SN65LVDM176DGKRG4 |
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Half-Duplex LVDM Transceiver 8-VSSOP -40 to 85 |
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M 726 190 Price and Stock
Infineon Technologies AG BSC190N15NS3 GMOSFETs N-Ch 150V 50A TDSON-8 OptiMOS 3 |
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BSC190N15NS3 G | 7,062 |
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Infineon Technologies AG BSC190N15NS3GATMA1MOSFETs N-Ch 150V 50A TDSON-8 OptiMOS 3 |
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BSC190N15NS3GATMA1 | 5,582 |
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Infineon Technologies AG TLD5190QUXUMA1LED Lighting Driver ICs LITIX |
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TLD5190QUXUMA1 | 2,767 |
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Infineon Technologies AG IGLD60R190D1AUMA3GaN FETs HV GAN DISCRETES |
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IGLD60R190D1AUMA3 | 2,469 |
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Infineon Technologies AG IPD65R190C7ATMA1MOSFETs HIGH POWER_NEW |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD65R190C7ATMA1 | 1,500 |
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M 726 190 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BC 148 TRANSISTOR
Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
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61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14513B BCD-To-Seven Segm ent Latch/Decoder/Driver L SUFFIX CERAM IC CASE 726 CMOS MSI Low-Power Complementary MOS T he M C 1 4 5 1 3 B B C D - to - s e v e n s e g m e n t la tc h /d e c o d e r/d riv e r is constructed with complementary MOS (CMOS) enhancement mode devices |
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C14513B MC14513B/D | |
TA7762N
Abstract: SW-22 A/rda 5607 sp
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TA7762N TA7762N SW-22 A/rda 5607 sp | |
PJ 0519
Abstract: 500EXH21 940-T-DS/PJ 0519 400YD21 301F1FM 300YD13 300MCB200 hc 2500 300MCB250 300ND13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 603PJA300 PJ 0519 500EXH21 940-T-DS/PJ 0519 400YD21 301F1FM 300YD13 hc 2500 300MCB250 300ND13 | |
400YD21
Abstract: 300YD13 500EXH21 301F1FM 503PJA200 300MCB180 300MCB200 300MCB250 300ND13 300QD13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 503PJA180 400YD21 300YD13 500EXH21 301F1FM 503PJA200 300MCB180 300MCB250 300ND13 300QD13 | |
500EXH21
Abstract: 300QH21 300QD13 301F1FM 503PJA200 300MCB180 300MCB200 300MCB250 300ND13 300TD13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 503PJLA80 500EXH21 300QD13 301F1FM 503PJA200 300MCB180 300MCB250 300ND13 | |
300YD13
Abstract: 500EXH21 301R1FM 400YD21 300TD13 301F1FM 503PJA200 300MCB180 300MCB250 300ND13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 503PJA200 300YD13 500EXH21 301R1FM 400YD21 301F1FM 300MCB180 300MCB250 300ND13 | |
500EXH21
Abstract: 300YD13 400MAB180 400YD21 301F1FM 301F3FM 503PJA200 300MCB180 300MCB200 300ND13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 503PJA180 500EXH21 300YD13 400MAB180 400YD21 301F1FM 301F3FM 503PJA200 300MCB180 300ND13 | |
tic 1260
Abstract: 500EXH21 300QD13 301F1FM 503PJA200 k1 522 503PJA250 300MCB200 300MCB250 300ND13
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300MCB180 RM-30HÃ 300MCB200 300MCB250 40tnA 300ND13 300QD13 300QH21 300TD13 725EI tic 1260 500EXH21 300QD13 301F1FM 503PJA200 k1 522 503PJA250 300MCB250 300ND13 | |
SGA-7489
Abstract: TRANSISTOR 726 7489 DC-3000 MCH185A101JK a74 sot-89 EDS-101801 EDS 10180
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SGA-7489 50-ohm EDS-101801 DC-3000 SGA-7489 TRANSISTOR 726 7489 MCH185A101JK a74 sot-89 EDS 10180 | |
IC BOSCH ISO 9141
Abstract: SGS Small Signal Transistors Nippon capacitors
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howev86> H8S/2649 REJ09B0200-0300 IC BOSCH ISO 9141 SGS Small Signal Transistors Nippon capacitors | |
Contextual Info: MAXIM I N T E G R A T E » P R O D U C T S b4E D S f l 7b b S l OOOTTIH IbT BiriXM 19-0107; R a v 1 ;4 /9 3 5A/2A Step-Down, PWM, Sw itch •Mode DC-DC R egulators The MAX724/MAX726 are monolithic, bipolar, pulse-width modulation PWM , switch-mode DC-DC regulators opti |
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MAX724/MAX726 MAX724 MAX726 MAX726HEKS MAX726HECK MAX726HECM T0-220 MILSTD-883. | |
SHF-0186K
Abstract: Sirenza Microdevices, Inc sirenza fet
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SHF-0186K 100mA. 100mA) SHF-0186K EDS-101577 Sirenza Microdevices, Inc sirenza fet | |
G.729 chip G.711
Abstract: G.711 CHIP SET ML7074-001GA ML7074 QFP64 QFP64-P-1414-0 g.729 codec chip TRW speech
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FEDL7074-001-01 ML7074-001GA G.729 chip G.711 G.711 CHIP SET ML7074-001GA ML7074 QFP64 QFP64-P-1414-0 g.729 codec chip TRW speech | |
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2-56 UNC-2A
Abstract: Jackpost H5935-2218551
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MIL-DTL-83513 H5935-221late/Bright 2-56 UNC-2A Jackpost H5935-2218551 | |
Contextual Info: DATA SHEET O K I T E L E C O M P R O D U C T S ML7074-003 Speech CODEC for VoIP October 2003 OKI Semiconductor ML7074-003 FED L7074-003 Issue Date: Mar. 2, 2003 S peech CODEC for VoIP GENERAL DESCRIPTION Oki Semiconductor’s M L7074-003 is a speech CODEC designed for VoIP applications. The device supports |
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ML7074-003 L7074-003 L7074-003 | |
507-190Contextual Info: MIL-DTL-83513 Micro-D 507-190 EMI-RFII Crimp-Ring Micro-D Backshell Assembly 507 T 190 M 15 B Product Series Jackscrew Option Table II Cable Entry Style T = Top S = 90° E = 45° Shell Size (Table I) Finish (Table III) Basic Number Style T -Top Entry R Style E - 45° Entry |
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MIL-DTL-83513 507-190 | |
Contextual Info: Aluminum Electrolytic Capacitors_ Radial Low ESR High Reliability Type LESRA Features • Suitable for switching power supplies. • Large permissible ripple current. Specifications 7267 Coldwater Canyon, North Hollywood. California 91605 • Phone 818 765-8300 • Toll Free (800) 827-7422 • Fax (818) 765-2387 |
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051b0b7 DDD15b4 051LDb7 | |
x0606
Abstract: IBM32NPCXXEPABBF66 4z57 SA 6356 ci 4009 0L12D 30G13 3114 sops lc fp603 X1078
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SPF-3043
Abstract: 3v20ma 2 GHz LNA DC-10 RF LNA 10 GHz 726 SC70-5
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SPF-3043 32dBm. SPF-3043 DC-10 EDS-101772 3v20ma 2 GHz LNA RF LNA 10 GHz 726 SC70-5 | |
hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
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MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp | |
DI 944
Abstract: ID9C
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b3h6/63Go 7629bVm 27bVm 5429bVm 927bVm DI 944 ID9C | |
074c
Abstract: BC219 4GKA DD642
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b3h6/63Go 7629bVm 9277bVm 27bVm 074c BC219 4GKA DD642 | |
BC244Contextual Info: xvz +:*1+ 14+0 y .573 + 0-73-91+~22= 8-~2-, 2~9+014/ 7-2~= <190 +512 97~481-49 8:667-88154 0.|{w| .A>KLIAJ EdgXZ WVaVcXZY S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in @aa bZiVa lZaYZY XdchigjXi^dc |
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b3h6/63Go 7629bVm BC244 |