M 9587 Search Results

PCM-9587F-S0A2E

Abstract: pcm 9582 PCM-9587 F S0A2E PCM-9587F-M0A2E ATX POWER CONNECTOR Dvi CONNECTION DIAGRAM M 9587 lcd screen to dvi PCM-10586-62 DVI to mini DVI CABLE CONNECTION DIAGRAM
Contextual Info: PCM-9587 A2 PCI DVI LVDS Intel Celeron® M Processor EBX SBC with LAN, LVDS, DVI, CRT, Audio, PC/104-Plus Features Audio • Intel® Celeron® M Processor ultra low power DIMM up to 1 GB Power VGA Ethernet FDD LPT 1st IDE USB3, 4 Intel® Celeron M Processor

WIRING diagram vga to usb CABLE

Abstract: usb to rj45 wiring diagram M 9587 PCM-9587 usb to s-video wiring diagram
Contextual Info: Onboard Intel Celeron® M CPU on board EBX SBC with LAN/ LVDS/DVI/VGA/Audio/ 4 COM/4 USB/2 SATA/PC/104-Plus PCM-9587 Features PCI DVI LVDS TV-Out • Embedded Intel® Celeron® M 600 MHz/ Celeron® M 1.0 GHz Audio DIMM up to 1 GB Power VGA Ethernet FDD LPT

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

AXP 209 IC

Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH

bb 36 930

Contextual Info: LISTED m o l e x Molex-ETC STANDARD RING TONGUE Ring Tongue Terminals 1 w1 C s f ; ' L^ 1 c M a te ria l: Copper o , j [[ K rim p tite , o) o) L Insulkrim p® j_ Versakrim p® (PVC Insulation) W ire Range AWG 24-26 (0.10-0.281 Stvd Size S M ax. Width

temic 0675 d4

Abstract: temic 0675 c9 TFK 404 telefunken transistor Temic IDIC chip 5551 preliminary schematic diagram pioneer amplifier sa 9800 7-segment display tfk 308 temic 0675 d1 atmel e5550 AEG PS 451
Contextual Info: General Information R em ote Control Identification Systems M icrocontrollers Addresses Temic S e m i c o n d u c t o r s General Information Alphanumeric Index T y p e . T y p e . e5530 10, 300 TK5550F-PP

D5411

Abstract: C18BH C537H TLCS-870 F5101 tlcs870 mnemonic
Contextual Info: TOSHIBA TLCS-870 TLCS-870 > V — X 'pp'^'iz y h TLCS-870 V V - X co to ±^ 129 412lfr^- ( M W M T\ ' / ' J - X f i t t i V ? t " ) x 7 TLCS-870 V V - X K fi, l^M jS < L T Jo f} , > í 'J U ä 4 ^ ' 4 H ^ á sé H 7° n ^ TLCS-870 V V - X f i , Â - ¿.

PAD103

Contextual Info: S M J 320C 3xK G D FL O A T I N G- P O I N T DIGITAL SI GNAL P R O C E S S O R K N O W N GOOD DIE SGUS019 - NOVEMBER 1995 • M ilita ry O p e ra tin g T e m p e ra tu re R ange -SS°C to 125°C, QML P r o c e s s in g • Validated Ada C o m p ile r • F a s t In s tr u c tio n C y cle Tim e o f 50 ns

BV EI 304 3160

Abstract: str f 6456 ic sw 2604 BV EI 304 3510 BV EI 303 3535 STR 6755 STR 6456 STR G 6352 AMI Semiconductor 9449 sw 2604 ic
Contextual Info: T e m ic Sales Offices Semiconductors Addresses Europe France TEMIC France Les Quadrants 3, avenue du centre B.P. 309 78054 St.-Q uentin-en-Y velines Cedex Tel: 33 1 3060 7000 Fax: 33 1 3060 7111 Germany TEMIC TELEFUNKEN m icroelectronic GmbH Erfurter Strasse 31

IXD17

Abstract: D9168 32C13 qml-38535 IXA11 IXD22 30552 IXD19 D13164
Contextual Info: REVISIONS LTR DESCRIPTION DATE YB-MO-DA APPROVED A Changes in accordance with NOR 5962-R060-92 91-11-25 M. L. Poelking B Changes in accordance with NOR 5962-R006-93 92-11-05 M. L. Poelking C Add device type 03. Update boilerplate. Editorial changes throughout.

nu-horizons

Contextual Info: □ IXYS North and South American Distributors Distribution Catalog Sales: Digi-key 800-344-4539 D igi-Key T h ie f R iv e r F alls, M N 8 0 0-344-4539 + 2 1 8-681-6674 Future Electronics Illin o is M isso u ri S a n D ie g o , C A 619-625-2800 AIIAmerican

TGUI9400CXi

Abstract: AM 5766 analog 486DX symphony chip set Tvga9200cxr TGUI9400 TGUI9400CX T304L 512kx4 Tvga 3728 lx data
Contextual Info: T R I D EN T M I C R O S Y S T E M S T GUI 9 4 2 0 DGÎ INC TDD2162 D O O O n D b7E » PRE LI MI NARY DATA SHEET 10T ITRID ^Trident TGUI9420DGÌ INTEGRATED GUI ACCELERATOR General Description Features Hardware acceleration of BitBLTs, line drawing, short stroke vectors, rectangle fills, text transfer ana color

Gold-MIL-G-45204

Abstract: Straddle-Mount
Contextual Info: Three In One Straddlemount Connector • SMTJR compat ertant Notice • • All statem ents, technical information and recom m endations related to on information believed to be reliable, but the accuracy or com pleteness thereof is not guaranteed. Before

hughes 226

Contextual Info: C able C a b le M a n u fa c tu re r ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ALPHA ANDREW ANDREW ANDREW

PAYTON

Abstract: payton transformer iso 9587 M 9587 payton group 9585 transistor m 9587 100uHy
Contextual Info: Payton group PAYTON GROUP I N T E R N AT I O N A L HDSL Data Communication Transformer P\N: 2377 - Encapsulated Operating frequency range 25 - 317 kHz Line impedance 135 Ω Pri. To Sec. Turns ratio 2.3:1 DC Resistance Pri R3-6+R4-5 680mΩ Max Sec R2-8 150 mΩ Max

mx 362-0

Abstract: 7853b J-787-12
Contextual Info: m olex Molex-ETC LISTED Ring Tongue Terminals — - : o !( ) i_ i Material: Copper j§ !<§ Krimptite Insulkrimp® Versakrimp® (PVC Insulation) W in H u g e AWG Sted Size S 0 (1 .5 ) 2 (2 ) 24-26 (0.10-0 281 4 (2.6) 6 (3.5) 8 (4) 10 1) 1-2 (2) S o ld e rle s s T e rm in a ls

Contextual Info: molexMolex-ETC STANDARD RING TONGUE LISTED Ring Tongue Terminals c s yrr /c \_ / ? - -> *— '»» w— _L () 7 i ( [ H L i_ J M a f e r ia l: C o p p e r In s u lk r im p (5 i_ V e r s a k rim p " N y la k rin tp ® (PVC Insulation) Funnel E n try

rkm 17

Abstract: TLCS-870 PYX9 TFA 1001 kmz 1010 KDJ-V
Contextual Info: TO SH IB A TLCS-870/X 1.6 1 Î kjË, S I * ^ ^ y? LD A, r ° -y 7° t y*'Js. V \ 3 - K 2Ü 16Ü 0101 Onnn 5n 7 y7 y a > JF ZF CF H F SF V F A «-r 1 8 H' -y M ^ ÿ X Î ' r O f i $ i 7 Î a À l ^ - ÿ ( : n - K L i t o Z - - - - ?)V 1 •*? n 7 5 7 ti, r= 00H ^ <h § “1 ” ^

Contextual Info: t T ab le ol C o n te n ts PRODUCT SELECTOR Aluminum Electrolytic Capacitors IE ILLIHOIS CAPACITOR, IHC. 3 7 5 7 W .Touhy A ve., L in co ln w o o d , Illinois 6 0 6 4 5 PAGE • 84 7 6 7 5 -1 7 6 0 • F a x (84 7) 6 7 3 -2 8 5 0 Film Capacitors PAG E M E C H A N IC A L S P E C IF IC A T IO N S

Contextual Info: AM MIS49 9587 Ge etting sttarted with w the e AMIS-49 9587 Eva aluation n kit pared by: Industrial ASSP - ON Semico onductor Prep http://onsem mi.com In ntroduction F serial UART U The USB poort communicaates with a FTDI onverter. A deddicated USB ddriver is needeed for this. Yoou can

Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features n n n n n HEXFET Power MOSFET Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated

IRF 930

Abstract: IRF3305
Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET

IRF3305

Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET

Contextual Info: PD - 95872 IRF2907Z IRF2907ZS IRF2907ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 75V RDS on = 4.5mΩ‰