M-87 SPEC Search Results

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

37 pin d type female connector

Abstract: 15 pin d connector to 25 pin d sub d sub 9 pin connector male 9 pin d sub SOLDER for 37 pin d type connector 37 pins D SUB connector 15 pin d sub connector 25 pins D SUB connector sub d D 25 SUB connector
Contextual Info: ➛ ➛ ➛ ➛ ➛ Sub D, Male Connector 9 15 25 37 50 9 15 25 37 50 ➛ ➛ Sub D, Female Connector No. of Poles ➛ ➛ Ordering Information m m . 87 3 in .4 3 ➛ ➛ m m .) 87 3 in .4 (3 Keyed by design, Sub D Modules are equipped with male or female connectors,

Contextual Info: SMB Connectors Alphabetical Index SMB Connectors Adapters. 89 Bulkhead Mount and Panel M ount.87 Flexible Cable. 77 PC M ount. 81

Contextual Info: V O CD DO NOT SCALE DRAWING a m | DWG. NO. SD-55502-00 EC NO. DRWN: CH'K: No 0 o ct a ai APPR: EC NO. DRWN: CH'K: r-o t i X H _ o APPR: EE RE VISED EC NO. J 2 00 2- 1224 CD DRWN:M.HORIIKE'82/87/23 CH'K: A.NODA '82/87/23 _ APPR: A.NODA '82/87/23 >

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line H igh Output Doubler 600 M H z C A TV Am plifier • 24 V Supply Voltage • Specified for 87-Channel Performance • 6th Generation Die Technology 20 dB GAIN 600 MHz 87-CHANNEL CATV AMPLIFIER • Improvement in Distortion Over Conventional Hybrids

34333

Abstract: 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add vendor CAGE 34333. Add vendor CAGE U4637. Editorial changes throughout. 87-04-16 M. A. Frye B Add device types 02, 03, and 04. Editorial changes throughout. 87-12-21 M. A. Frye C Change vendor CAGE 12969 to 48726. Change max duty cycle min limit. Add

Contextual Info: MB87033B SCSI Protocol Controller SPC with On-Chip Drivers/Receivers E dition 1.0 S e p te m b e r 1989 GENERAL DESCRIPTION The M B 87 03 3B S C SI Protocol C o n tro lle r (SPC) is a C M O S LSI circu it sp e cifica lly d e sig ned to control a Sm all C o m p u te r S ystem s Interface (SCSI). The M B 87 03 3B e sta blishes the Fujitsu SPC

Contextual Info: S D - 39 87 0- 00B 5,00 [.197] •S3 m an I ! RECDMMENDED PLATED THRU HDLE PATTERN SCALE 2:1 NDTES: .41 [.016] TYP WASHDUT 1. 2. 3. 4. 5. 6. MATERIAL: SEE TABLE FINISHES: SEE TABLE PRODUCT S P E C IFICATION: NOT REQUIRED PACKAGING: NDT REQUIRED MATES WITH: 87 SERIES PLUG

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C34C87 Product Preview Quad E IA -4 2 2 -A Line Driver P SUFFIX CMOS P L A S T IC D IP C ASE 648 The M C 34 C 87 is a q uad d iffe re n tia l line d riv e r d esig n ed fo r d ig ita l d ata transm ission o ver balanced lines. The M C 34C 87 m eets all the requirem ents of

RS9010

Abstract: IEEE1386
Contextual Info: Catalog 1307515 Issued 9-99 Mezzanine/Stacking Section Guide Select M ezzanine/Stacking Connectors by F eatures. 86 Select M ezzanine/Stacking Connectors by System P e rfo rm a n ce . 87

MPS 070

Contextual Info: ¡MtàT MPS-302201-87 100 to 3000 M H z Variable Gain Amplifier Features • High IP3 +35 dBm Typical • High P1dB +22 dBm Typical • Variable Gain • 30% High Power Added Efficiency • +5 Volt Bias Description The MPS-302201 -87 is an internally matched GaAs FET amplifier in a gold/ceramic hermetically sealed package.lt

Contextual Info: S E R IE S 87 s 5,0m m Eurostyle H igh Temperature PCB Header D e s c r ip tio n F e a tu re s The series 87 high temperature Eurostyle® headers on 5,0mm .197" spacing are polarized using the industry standard design. The 250°C process temperature rating enables convection or

MPS 070

Contextual Info: ¡MtàT MPS-003001 -87 20 to 3000 M H z Variable Gain Amplifier Features • High IP3 +34 dBm Typical • High P1dB +21 dBm Typical • Variable Gain • 30% High Power Added Efficiency • +5 Volt Bias Description The MPS-003001 -87 is an internally matched GaAs FET amplifier in a gold/ceramic hermetically sealed package.lt

Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode

Contextual Info: REVISIONS DESCRIPTION REV .250 6.4 mm DATE JB 5/11/87 010 REDRAWN NO CHANGES 02o MAJOR REDESIGN. ECN 90 -0 2 5 1 -1 APPROVED MH/M 5/13/87 KCM 9 /2 7 /8 9 SMC PLUG .040 REF (1.0 mm) Ÿ- CABLE REF PLANE .234 HEX (5.9 mm) .594 REF (15.1 mm) REF PLANE — .218 HEX

Contextual Info: RPT-86/RPT-87 PMI LOW POWER PCM REPEATERS P r e c is io n M o n o l i t h i c * In c . FEATURES • Low Power Consumption 56mW) • Single-Supply Operation • Wide Data Rate Range <100kblt/s to >3Mbit/s • Dual ALBO Diodes; Dynamic Range >50dB • Clock-Shutdown Circuit (RPT-87)

GMD1640ALY

Contextual Info: GMD1640ALY with le d b a c k l ig h t in g # Circuit Diagram of LED Backlighting # Module Dimensions with LED Backlighting _ 87±1 U n it : m m # Characteristics of LED Backlighting Relative Luminous Intensity VS. Forward Current

Contextual Info: r H EDD_ NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± DRAWING NO.: REV. 32-1123 .0 1 0 ” [,2 5 4 m m ]. J 1 .2 5 0 [ 3 1 .7 5 m m ]* .2 1 5 MAX _ [5 .4 6 m m ] .87 5 [2 2 .2 3 m m ]" .12 5 [3 .1 8 m m ]" .50 0 [1 2 .7 0 m m ]" i .50 0 [1 2 .7 0 m m ]

intel embedded microcontroller handbook

Abstract: 51FX 8XC51FX
Contextual Info: ¡ ir h - J M liU I M O I M W 8XC51FX CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLERS Commercial/Express 87C51FA/83C51FA/80C51FA/87 C51FB/83C51FB/87C51FC/83C51FC *See Table 1 for Proliferation Options High Performance CHMOS EPROM/ROM/CPU 32 Programmable I/O Lines

Contextual Info: 6 4 5 APPROVED: _ DATE:_ TITLE: .594 .310 [7 .87 ] r .050 " [ 1.27] XL M .450 [ 11 .43 ] IT SPECIFICATIONS: Material: Insulator: Hi— Temp the rm o plastic, rated UL 94V— 0 Insulator color: Black C ontacts: Phosphor Bronze

diode A23

Contextual Info: FDFMA3P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –30 V, –3.3 A, 87 mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other

Contextual Info: P.C.B. LAYOUT CIRCUIT DIAGRAM <D <D T ole ran ces: < 10m m : > 10m m : Date 07/07 Nam e dr TSSE 633 SB-RA-1HW C o n ta ct rating 11/07 dr M od ifica tions Date Nam e knitter-switch 30 11 87 Page 1/2 Specifications: Contact rating: Contact resistance: Insulation resistance:

Contextual Info: FDFMA3P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode –30 V, –3.3 A, 87 mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other

Contextual Info: 12 13 11 10 NOTES UNLESS OTHERWISE SPECIFIED : 1. MATERIALS: WAFER MATERIAL NUMBER CONTACT PLATING MINIMUM GOLD THICKNESS WAFER PLASTIC COLOR 7 5 1 8 7 -0 0 0 5 0.00076m m OOuin) BLACK 7 5 1 S 7-0055 0.00127mm (50uh) GRAY 751 87-1005 0.00076m m OOuin) BLACK