M-BOND 200 EQUIVALENT Search Results

RFLW5N1500

Contextual Info: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

RFLW5N1500

Contextual Info: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

RFLW5N1500

Contextual Info: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

60cmq

Abstract: 403CNQ IOR 445
Contextual Info: International IöR Rectifier Wofei Port Number Die Pail Number 3D Schottky Diodes Die A' length/Side in. mm Anode Bond Pad 'B' length/Side Metalization Tray (in.) mm (top side) Process Quantity Equivalent Finished Products S C I75S060A W B SCI75S060A (,|75i

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . RFLW KEY BENEFITS • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" or 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model • S parameter files available for download

1N4150UR-1

Contextual Info: MINI-MELF-SMD Silicon Diode 1N4150UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per

DIODE Z54

Contextual Info: MINI-MELF-SMD Applications LL4150 or LL4150-1 10 Silicon Diode Switching Used in general purpose applications, where a low current controlled forw ard characteristic and fast sw itching speed are im portant. BKC can produce generic equivalents to JAN/ TX; TXV and S level per

TGA8722-SCC

Abstract: s32a
Contextual Info: Amplifier TGA8722-SCC 2 to 20-GHz Frequency Range 15-dB Typical Gain, 16-dB at 6 V 1.8:1 Typical Input SWR, 1.4:1 Typical Output SWR 13-dBm Output Power PidB at Midband, 15-dBm at 6 V 5.5-dB Typical Noise Figure 2,8956 x 2,6416 x 0,1524 mm (0.114 x 0.104 x 0.006 in.)

Contextual Info: TGS8630-XCC DC TO 12-GHz SPDT SWITCH AP PR O VAL 5026 On-Chip Driver Compatible With CMOS or Open-Collector TTL Typical Insertion Loss . . . 2.3 dB at 12 GHz High Isolation . . . 46 dB Through 12 GHz Useable Bandwidth Through 18 GHz Size: 3,454 x 2,007 x 0,102 mm

MBD2057-C18

Contextual Info: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C

MBD3057-C18

Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Contextual Info: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability

MBD3057-C18

Abstract: back Tunnel diode
Contextual Info: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d

MBD3057-C18

Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Contextual Info: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth

MSTF-2ST-10R00J-G

Abstract: Au Sn eutectic M570 bond wire gold soft solder die bonding 84-1LMI
Contextual Info: Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMIC’s Discussion Millimeterwave MMIC's are becoming more common in commercial applications. Their small size and potentially lower cost has made them valuable in the growing market of millimeterwave systems. Their size and delicate nature

TP-1010

Abstract: TP1041 54LVTH162244 pda jog x 0602 ma 54LVTH162244RP TM2018 TP1007
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16-BIT BUFFERS/DRIVERS WITH 3-S TATE OUTPUTS S PACE PRODUCTS 54LVTH162244RP Memory FEATURES : DESCRIPTION: • Output ports have equivalent 22-Ω series resistors, so no external resistors are required • Support mixed-mode signal operation 5V input and output

i236

Contextual Info: Application Not High-Volume Commercial Plastic Packaged GaAs Monolithic Devices Abstract In d eveloping a new product line o f high volum e com m ercial plastic packaged G aA s m onolithic devices, it has becom e evi­ dent that norm al design, fabrication, and evaluation tech ­

LL4150 SMD

Abstract: DO-213AA LL4150 LL4150-1
Contextual Info: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per

Contextual Info: TGA8061-SCC Low-Noise Amplifier 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.

DO-213AA

Abstract: LL4150 LL4150-1
Contextual Info: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per

Contextual Info: TGA8320-SCC Gain Block Amplifier DC to 8-GHz Frequency Range L, S, and C-Band 9.5-dB Gain 1.3:1 Input/Output SWR 17-dBm Output Power at 1-dB Gain Compression Typical Noise Figure is 5-dB 1,066 x 1,219 x 0,152 mm (0.042 x 0.048 x 0.006 in.) PHOTO ENLARGEMENT

TP-1010

Abstract: TP1007 TP-1012 54LVTH162245RP TM500 TP1008 TM2023 TP-1007 TP1033
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16-B IT BUS TRANSCEIVERS WITH 3-S TATE OUTPUTS S PACE PRODUCTS 54LVTH162245RP Memory FEATURES : DESCRIPTION: • A-Port outputs have equivalent 22-Ω series resistors, so no external resistors are required • Support mixed-mode signal operation 5V input and output

RR-63

Contextual Info: inteT RELIABILITY REPORT RR-63 August 1989 4 Static RAM Reliability Report MADHU NIMGAONKAR COMPONENTS CONTRACTING DIVISION QUALITY AND RELIABILITY ENGINEERING Order Number: 240544-001 4-63 SRAM RELIABILITY DATA SUMMARY CONTENTS PAGE 1.0 IN T R O D U C T IO N .4-65

Contextual Info: TGA8061-SCC “ H 1 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.

5082-0024

Contextual Info: HEWLETT-PACKARD i CMPNTS EOE D □ 44475ÔM QDGStbT HIGH RELIABILITY SCHO TTKY CHIP FOR M EDICAL APPLICATIO NS U'/jT] H E W L E T T vlWJj P A C K A R D 2 CJ HSCH-1111 Features JAN-TXV EQUIVALENT HIGH BREAKDOWN VOLTAGE PICO -SECO N D SW ITCHING SPEED LOW TURN-ON