M-BOND 450 B Search Results

Vishay Conditioner A

Abstract: GT-14 dupont mylar rohs m-bond 450 b
Contextual Info: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges

Contextual Info: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  GSP-1 Gauze Sponges  CSP-1 Cotton Applicators

cancer data

Abstract: 14032 m-bond 450 b
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)

transistor A 27611

Abstract: 27611 LD50 ketone 14033
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)

Contextual Info: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting

alpha detector

Abstract: CDC7622 on/gold detectors circuit
Contextual Info: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

NE9004

Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED

Chip Advanced Tech

Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1021

Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Contextual Info: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

P1014

Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

2N6580

Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Contextual Info: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls

t6060

Abstract: T-6060
Contextual Info: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1

SVT-6060

Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Contextual Info: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1

silicon carbide

Abstract: KS5450A-M KS5450A-N KS5450A-O KS5450A-P KS5450A-Q IC TECHNOLOGY LED pulse derating curve silicon carbide LED
Contextual Info: InGaN•SiC Technology The Leader in Silicon Carbide Solid State Technology KSx450x-x Features l l l l High performance 3.5mw optical power 450nm Deep Blue Single Wire Bond Structure Class ESD Rating Ô3 Applications l l l l l l Outdoor LED Video Displays

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

p1014

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

SA051

Abstract: HEMT Amplifier
Contextual Info: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA

CDB7619-000

Abstract: CDE7618-000 Silicon Detector Diodes
Contextual Info: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

Contextual Info: TR3547 LEDs CxxxTR3547-Sxx00 Data Sheet Cree’s TR3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting

TR505

Contextual Info: TR5050 LEDs CxxxTR5050-Sxx000 Data Sheet Cree’s TR5050 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting

Microsemi LX3055

Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Contextual Info: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and

Contextual Info: TR5050M LEDs CxxxTR5050M-Sxx000 Data Sheet Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting

Contextual Info: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg