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    Contextual Info: BC817S SEMICONDUCTOR forward international elbctoonics l id . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Conj>kmeit to BC807S ABSOLUTE MAXIMUM RATINGS at T an fc-^C Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


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    BC817S BC807S 062ia 100mA 500mA 500mA M00MHZ PDF

    GaAs photodiode 10G

    Abstract: NTT Electronics GaAs NLG2132 10G PD photodiode 10Ghz PIN
    Contextual Info: NS GD E056D PRELIMINARY MAY 29, 2000 NEL NLG2132 TRANSIMPEDANCE AMPLIFIER BARE DIE This NLG2132 is a GaAs MESFET IC Chip that performs signal amplification over the wide frequency range extending from DC to 7.7 GHz. This IC Chip is applicable to 10 Gb/s optical fiber communication systems.


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    E056D NLG2132 NLG2132 10Gb/s GaAs photodiode 10G NTT Electronics GaAs 10G PD photodiode 10Ghz PIN PDF