M1A1 Search Results

T23N

Abstract: au1017 4100 dram HYS14400 IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

Contextual Info: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna­ mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit

W41J

Abstract: IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

M1A120M00

Contextual Info: cosmo Reed Relay Features M1A120M00 Outside Dimension:Unit mm 1. High reliability. . 2. Electro-shield is available. KUAN H S I g M1A120M00 x DATE CODE 3. Automatic insertion compatible. 4. Ultra-mini size offers space saving. 20.3 — 5. 05 5. Application for testing equipm ent & instrument is compatible.

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft

Contextual Info: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008

CYL008M162FFBU-1ABAI

Abstract: M2A2
Contextual Info: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

VF-RM5

Abstract: TT 2206 et 1102 TM55EZ-H TM55EZ-M X103 TM25EZ
Contextual Info: - 294 — IM ÿ x * ' l — ju M & 1È TM 25EZ o-H r O té tti 2 00 0V • * * £ » TM 25K7, M TM 25EZ-H 480 960 V /r fi.Vf V’fiR.W 400 800 Y ViiB.M 400 S00 V ,i¿ E ftïïï® -ï- Vksm I t iav> /riHMM I t, h r-t lii ,ll Pr,s; fer 25 : T f llf - Æ ,

2D1150D-050

Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Contextual Info: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—

PCR 406 J

Abstract: GFF90B12 GFF200E12 PCR 606 J M-216 H-24 SS1002 VD-800V
Contextual Info: - 91 a G FF90B h • « Â W lÎtt II!. G FF 9 0 B 1 2 .111 V drm I n RMS 30 T c = 6 0 X ) I t qrm 90 ( Ko = 800V, 180 ( Vb = 800V, It sm 400 (1 . 5 m s # M , di / d t 200 Vcrm P C F (AV) 120 ( 1 . 5 m s M , 20 10 Tj £ „„//= 12V) £,„//= 1 2 V )

sis 968

Abstract: KXB151D-14A KXB801D-14A BV EI 305 2056 K66188 K66-1
Contextual Info: - 340 - * ± E N B r j r j r jD -14 A ENBr / jr j JB D -I4B 'J 7, 9 :• i l j ¡m]i'\fMí-tT r i\ ■~ 7 -• i 'i-No. 1-166188 • ï ' h b z I . IK i \ /)+■-> ^¡l ; Vi 1 1 DC 1 m A ^ t « V ,|L /: > J ^?iS f f t ^M -t-^ % £ ft; X * ;u * ' :v; x EN Br jr /

ta8250

Abstract: SM6DZ46 SM6DZ46A SM6GZ46 SM6GZ46A SM6JZ46
Contextual Info: — 141 — * SM 6 rD, G, J _ jZ 4 6 • W të 0 * * T T -5 ^ 13 - 1 O F I A 'J 6 A o i& V i iñ f á , f T« = 25 " C ) R * ft fô U * t L T t e îiiü 9 t t # * 7 Œ O T O ^ O t t f f lS f ê â T 'if e f S ^ 'iT 'i& o t V â k # # £ í* & ( 1500V ,

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

FSM30C6

Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Contextual Info: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)

HC06

Abstract: NV100HC06 NV120HC06 NV200HC06 NV240HC06 NV270HC06 NV270HC06A
Contextual Info: - 336 e >I 7* ? NVr . k . jH C 0 6 - > ' ; - X - U * ? '- -t > 9 — 9 o : U L 94V -0 • : 1 ; £ C M 1 i m 1 2 V — ST— S; / | Z ifiL fz t £ < n $ & - % r £ DC 1 ff i H 'f — f fil , £ ft £ ig [V ] a íf r lG I U t S : [V ] ÍV ^ 00.6 5± 1 5 - 1

S6111

Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20
Contextual Info: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo

KK55GB

Abstract: KK55GB-40 KK55GB-80 PK55GB PK55GB-40 PK55GB-80
Contextual Info: - H í± * « • «M U P K 5 5 G B , K K 55G B 273- I- o u £ 5 l* * S » £ ^ PK 55 G B-4 0 , P K 55 G B-8 0 , KK55GB-80 960 V rrm 400 Vdrm 400 ii m E -*!- ill] Tj = 125‘C , V d = V rrm 800 V I drm T j = 1 2 5°C, V d= V dru 800 V V tm T j = 1 25T, I t m = 165A

QCA75A60

Abstract: QBB100A60 QCA30B40 ic LM 356 251C QBB100A40 QBB150A40 QBB150A60 QCA50B40 QCA50B60
Contextual Info: - 1 9 9 a ± « a QCA-2B QCA-2C T i lâ io m Œ V CE f i * f i * (A (A ) f i * f i * (V ) t f t . fi * (A ) (A ) (V ) (A ) f i ¿Z l . (A ) -K m , r * (ju s ) I p V BE d i/d t (A ) (V ) (A /î î s ) V f (u s) V be v i7 • Ü = 2 5 'C ) (V ) QCA-3A f i

SSG150C60

Abstract: SSG150C60 equivalent sumi jo SSG100C120 SSG100C80 SAT-10 SSG100C50 SSG150C20 SSG150C30 SSG100C
Contextual Info: A\ 3 , Z 'Q OS s ri a yw sri y w , v >p *»*«.! 09 rt-^ % = ü i ‘ 3 . 9 2 1 = '! S 2 '0 KW Az A = aA '0 £ Z \ = ' ± D .S 2 oor A V ÿ 3. i.V )p;ap D. }p / *p S r i, y "I V î aoA A Ot = '1 { V 8 ' 0 = y/ k,miA z A = QA ‘0 £Z = 'I ) AI oov III V I =17

MG150H2YL1

Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
Contextual Info: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)