M1Z 50 Search Results

SPLC501C

Abstract: 6800 mpu CAP220 SPLC501C 128 64
Contextual Info: NHD-C12864M1Z‐FSW‐FTW‐3V6 COG Chip‐On‐Glass Liquid Crystal Display Module NHD‐ C12864‐ M1Z‐ F‐ SW‐ F‐ T‐ W‐ 3V6‐

Contextual Info: NHD C12864M1Z FSW FTW 3V6 COG Chip On Glass Liquid Crystal Display Module NHD C12864 M1Z F SW F T W 3V6 Newhaven Display

IR 2802

Contextual Info: Schottky Barrier Diodes SBD MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • VR = 50 V is guaranteed • IF(AV) = 200 mA rectification is possible

MA3X727

Contextual Info: Schottky Barrier Diodes SBD MA3X727 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 Unit VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward

mA727

Contextual Info: MA111 Schottky Barrier Diodes SBD MA727 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● IF(AV)= 200mA rectification possible ● Superior in reliability

MA3X727

Abstract: MA727 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X727 (MA727) Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward

IR 50

Abstract: m1z 50 MARKING 103 MA3X727 MA727
Contextual Info: Schottky Barrier Diodes SBD MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Reverse voltage VR = 50 V is guaranteed • Forward current (Average) IF(AV) = 200 mA rectification is

MA3X727

Abstract: MA727
Contextual Info: Schottky Barrier Diodes SBD MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • VR = 50 V is guaranteed • IF(AV) = 200 mA rectification is possible

M1 Z

Abstract: DO204MB
Contextual Info: 36E D GENL INSTR / POWER 3fi^D13? DDQ 4 MÔ 7 5 I 16IC • T ' O / - £> 7 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers

st4 triac

Abstract: bidirectional trigger powerex
Contextual Info: POÜJEREX T 1 D IN C D • T E T M bS l D G O lfllS 5 ' T ' c # 5 - '£ 5 ■ TRIACS / Trlac Triggers The ST2 dlac) is a silicon bi-directional diode which may be used for triggering triacs or SCRs. It has a three iaiyer structure with negative resistance switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3X727

Abstract: MA727
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3X727

Abstract: MA727
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

marking M9u

Abstract: 5962-E1257-2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '

aeg rsz

Abstract: AEG RSZ 2 aeg rsz 3 AEG T 178 aeg protection relay oerlikon aeg rsz settings cdc 2030 Sprecher Schuh timer R3AS52
Contextual Info: RK 40-401 C om parison betw een ASEA tim e -la g o v e r- c u rr e n t re la y type RIDA w ith independent tim e -la g c h a ra c te ris tic and c o rresp o n d in g re la y s of o th er m akes CONFIDENTIAL Reg, 5621,7431 RELAY INFORMATION This c ir c u la r Is intended as a guide to ASEA s a le s re p re se n ta tiv e s

Contextual Info: Fiber Optic Cable FOR VOICE AN D DATA T R AN SM I SSI O N Fiber Optic Cable Products Delivering Solutions THAT KEEP YOU CONNECTED QUALIT Y General Cable is committed to developing, producing, This catalog contains in-depth information on the General Cable

Contextual Info: a PRELIMINARY Advanced Micro Devices Am79C983 Integrated Multiport Repeater 2 IMR2 DISTINCTIVE CHARACTERISTICS • Repeater functionality compliant with IEEE 802.3 Repeater Unit specifications ■ Hardware implementation of Management Informa­ tion Base (M1B) with all of the counters, attributes,

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise