M2A MARKING Search Results

SMD M2A transistor

Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
Contextual Info: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection

M2A transistor

Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
Contextual Info: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code

M2A transistor

Abstract: K 2078 SBT42F SBT92 SBT92F
Contextual Info: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code

M2A transistor

Contextual Info: SBT92 PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 2 SOT-23 Ordering Information Type NO. Marking

2SK125

Abstract: m2a marking
Contextual Info: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4

M2A transistor

Contextual Info: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • MECHANICAL DATA • Case: SOT-323, Plastic

Contextual Info: SBT92F PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F 2 SOT-23F Ordering Information Type NO. SBT92F

SMD M2A

Abstract: SMD M2A transistor national semiconductor marking convention EIA-485/EIA smd 1034 smd marking zh transistor smd ZH DS96F173 DS96F175 EIA-485
Contextual Info: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved

AC163

Abstract: SMD M2A SMD M2A transistor 54AC163 54ACT163 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking
Contextual Info: National P/N 54ACT163 - 4-Bit Binary Counter, Synchronous Reset Products > Military/Aerospace > Logic > FACT ACT > 54ACT163 54ACT163 Product Folder 4-Bit Binary Counter, Synchronous Reset General Description Features Package & Models Datasheet Samples & Pricing

MA6X122

Contextual Info: Switching Diodes MA6X122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2

SMD M2A transistor

Abstract: 54AC169 54AC169DMQB 54AC169LMQB 54ACT169 5962-9160301M2A 5962-9160301MEA
Contextual Info: National P/N 54AC169 - 4-Stage Synchronous Bidirectional Counter Products > Military/Aerospace > Logic > FACT AC > 54AC169 54AC169 Product Folder 4-Stage Synchronous Bidirectional Counter General Description Features Datasheet Package & Models Samples & Pricing

SMD M2A

Abstract: national semiconductor marking convention smd 1034 SMD M2A transistor DS96F173 DS96F175 EIA-485
Contextual Info: DS96F173C/DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The

SMD M2A

Abstract: DS96F175 applicaTION NOTE SMD M2A transistor DS96F173 DS96F175 EIA-485 MC3486 application
Contextual Info: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The

SMD M2A transistor

Abstract: DS96F173 DS96F175 EIA-485
Contextual Info: General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The use of LFAST technology allows the DS96F173 and

national semiconductor marking convention

Abstract: DS96F173CJ MAB08 SMD M2A transistor DS96F173 DS96F173C DS96F173M DS96F175 m2a marking DS96F175M
Contextual Info: DS96F173C DS96F173M DS96F175C DS96F175M EIA-485 EIA-422 Quad Differential Receivers General Description The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard The DS96F173 and the DS96F175 offer improved

MA4SD10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

MA4SD10

Abstract: m2a marking
Contextual Info: Schottky Barrier Diodes SBD MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density mounting  Low forward voltage VF

M2A transistor

Abstract: 2N2222A MMDT2222A SC70-6L
Contextual Info: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable

M2A transistor

Abstract: 2N2222A MMDT2222A SC70-6L 2N2222A npn transistor
Contextual Info: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable

Contextual Info: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable

Contextual Info: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable

96F175

Abstract: DS96F175CJ
Contextual Info: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density

SLD302WT

Abstract: SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3
Contextual Info: SLD302WT SONY 200mW High Power Laser Diode_ |For the availability of this product, please contact the sales office^ Description SLD302W T is a gain-guided, high-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip