Untitled
Abstract: No abstract text available
Text: 2SK1606 Switching Diodes MA128 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Short reverse recovery period trr ● Small capacity between pins, Ct ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3
|
Original
|
PDF
|
2SK1606
MA128
MA123
|
M2V Package
Abstract: MA6X123 MA6X128
Text: Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density
|
Original
|
PDF
|
MA6X128
MA6X123)
M2V Package
MA6X123
MA6X128
|
MA123
Abstract: MA128 MA6X123 MA6X128
Text: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction
|
Original
|
PDF
|
MA6X128
MA128)
MA6X123
MA123)
MA123
MA128
MA6X123
MA6X128
|
JEDEC MO-187 Variation BA
Abstract: 10-PIN MO-187 MO-229 SP6652 SP6652ER SP6652EU peak Current Mode internal loop Compensation Voltage Regulator Transconductance current source feedback PWM
Text: SP6652 1A, High Efficiency, High Frequency Current Mode PWM Buck Regulator FEATURES PGND 1 10 LX • 1A Output Current SGND 2 9 PVIN SP6652 ■ 1.2MHz Constant Frequency Operation 8 SVIN FB 3 ■ 97% Efficiency Possible 10 Pin MSOP 7 SYNC COMP 4 ■ Pin Selectable Forced PWM or PWM/PFM Modes
|
Original
|
PDF
|
SP6652
500nA
SP6652EU/TR
SP6652EU-L/TR
SP6652
JEDEC MO-187 Variation BA
10-PIN
MO-187
MO-229
SP6652ER
SP6652EU
peak Current Mode internal loop Compensation
Voltage Regulator Transconductance current source feedback PWM
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode • Forward current (Average) IF(AV) = 500 mA rectification is possible
|
Original
|
PDF
|
2002/95/EC)
MA3J7000G
|
10-PIN
Abstract: MO-187 MO-229 SP6652 SP6652ER SP6652EU
Text: SP6652 1A, High Efficiency, High Frequency Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.2MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ Pin Selectable Forced PWM or PWM/PFM Modes ■ Ultra Low Quiecent Current in PFM Mode: 50µA
|
Original
|
PDF
|
SP6652
500nA
SP6652
10-PIN
MO-187
MO-229
SP6652ER
SP6652EU
|
MA123
Abstract: MA128 MA6X123 MA6X128
Text: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density
|
Original
|
PDF
|
MA6X128
MA128)
MA6X123
MA123)
MA123
MA128
MA6X123
MA6X128
|
MA3J7000G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name
|
Original
|
PDF
|
2002/95/EC)
MA3J7000G
MA3J7000G
|
MA6X1280G
Abstract: M2V Package MA6X123
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Four isolated elements contained in one package, allowing highdensity mounting
|
Original
|
PDF
|
2002/95/EC)
MA6X1280G
MA6X123
MA6X1280G
M2V Package
MA6X123
|
MA6X123
Abstract: MA6X1280G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1280G Silicon epitaxial planar type For switching circuits • Package • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction
|
Original
|
PDF
|
2002/95/EC)
MA6X1280G
MA6X123
MA6X123
MA6X1280G
|
buck converter 2kw
Abstract: CDRH3D28-4R7
Text: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator Features • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652
SP6652
SP6652EU/TR
SP6652EU-L/TR
buck converter 2kw
CDRH3D28-4R7
|
Untitled
Abstract: No abstract text available
Text: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652
SP6652
SP6652ER/TR
SP6652EU/TR
SP6652EU-L/TR
|
Untitled
Abstract: No abstract text available
Text: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652
SP6652
SP6652EU/TR
SP6652EU-L/TR
|
JL 1500 6.3v
Abstract: No abstract text available
Text: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652
SP6652
SP6652EU/TR
SP6652EU-L/TR
JL 1500 6.3v
|
|
TDK 4.7uh
Abstract: buck converter 2kw GRM188R60J475KE19 GRM21BR60J106KE19L SP6652
Text: Solved by SP6652 TM 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator Features • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Voltage ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652
Oct10-07
SP6652
TDK 4.7uh
buck converter 2kw
GRM188R60J475KE19
GRM21BR60J106KE19L
|
Untitled
Abstract: No abstract text available
Text: SP6652/SP6652A 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required
|
Original
|
PDF
|
SP6652/SP6652A
SP6652
SP6652
SP6652EU/TR
SP6652EU-L/TR
|
MA3J7000G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an
|
Original
|
PDF
|
2002/95/EC)
MA3J7000G
MA3J7000G
|
MA6X123
Abstract: MA6X128 MA123 MA128
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage
|
Original
|
PDF
|
2002/95/EC)
MA6X128
MA128)
SC-74
MA6X123
MA6X128
MA123
MA128
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage
|
Original
|
PDF
|
2002/95/EC)
MA6X128
MA128)
MA6X123
MA123)
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended
|
OCR Scan
|
PDF
|
F2201
1110AvenidaAcaso,
72410CH
G000241
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features
|
OCR Scan
|
PDF
|
F1206
1110AvenidaAcaso,
7S41GCH
|
30R2R
Abstract: Nichicon PT-Series
Text: Communication ICs Power supply unit for LCDs BP5302/B P5302F The BP5302 and BP5302F are DC-DC converter units for supplying power to liquid crystal display LCD panels. The ICs supply a negative voltage from a positive power supply. They are available in a single in-line package as an
|
OCR Scan
|
PDF
|
BP5302/B
P5302F
BP5302
BP5302F
BP5302)
BP5302F)
20kfl
BP5302/BP5302F
BP5302F
30R2R
Nichicon PT-Series
|
Untitled
Abstract: No abstract text available
Text: Subscriber Line Interface Circuit SLIC Protection Battrax (Modified DO-214) Subscriber Line In terface C ircuit (SLIC) Protection B attrax ( M o d i f i e d 0 0 -2 1 4 ) SIDACtor Data Book PIN 3 (VREF)- \ PIN 1 _ X (Line) The Battrax is a solid state protection device that can
|
OCR Scan
|
PDF
|
DO-214)
|
nh0002
Abstract: LH0002CN NH0002C LH0002 E20A LH0002C LH0002E LH0002H N10A LH0002GH
Text: NATL SEf l l COND LINEAR BEE D bS011E4 0Dbfl71S LH0002/LH0002C Current Amplifier General Description The LH0QQ2/LHQ002C is a general purpose current amplifi er. cuit also provides a low output Impedance for both the posi tive and negative slopes of output pulses.
|
OCR Scan
|
PDF
|
bS011S4
LH0002/LH0002C
T-T9-23
TL/H/5560-7
nh0002
LH0002CN
NH0002C
LH0002
E20A
LH0002C
LH0002E
LH0002H
N10A
LH0002GH
|