M33 NEC Search Results

transistor m33

Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package

Contextual Info: M23-M33-M43-M63 Manómetros con contactos eléctricos en seguridad intrínseca M23/M33 - Presión diferencial M43 - Presión relativa con sobrepresión fuerte M63 - Presión absoluta Manómetros Ø 150 mm con fuelles Para atmósferas y fluidos corrosivos Contactos inductivos

maximum gain s2p

Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package

M33 TRANSISTOR

Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package

M33 TRANSISTOR

Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

NESG2107M33

Abstract: NESG2107M33-A NESG2107M33-T3-A
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

NE851M33

Abstract: NE851M33-T3-A
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)

M33 TRANSISTOR

Abstract: marking E7 NE851M33 NE851M33-T3 360 U
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33 50 pcs (Non reel)

M33 TRANSISTOR

Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)

UKA720

Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Contextual Info: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller

NESG2107M33

Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification

NE687M33

Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)

NE685M33

Abstract: NE685M33-T3
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

NE685M33-T3-A

Abstract: NE685M33 NE685M33-A
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8

M33 TRANSISTOR

Abstract: NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NESG2046M33

Abstract: NESG2046M33-A NESG2046M33-T3-A
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid