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    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Jan. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min) and tSHZ(max)


    Original     		PDF M52D64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		PDF M52D64164A M52D64164A-10TG 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007


    Original     		PDF M52D64164A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M52D64164A 2E Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES           ORDERING INFORMATION 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M52D64164A

    RA10X

    Abstract: No abstract text available
    Text: ESMT M52D64164A Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		PDF M52D64164A M52D64164A-10TG 100MHz RA10X

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		PDF M52D64164A M52D64164A-10TG M52D64164A-10BG 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A 2E Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES           ORDERING INFORMATION 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M52D64164A M52D64164A-5BG2E M52D64164A-6BG2E M52D64164A-7BG2E 200MHz 166MHz 143MHz

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII