M628 Search Results

m628032

Abstract: SOJ28 1370E
Contextual Info: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION

Contextual Info: XZ7 SG S-TH O M SO N * IM. HD»IHI miS !0 §i M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 12,15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil

Contextual Info: 52E Gl D • 003Ö13E S G S -T H O M S O N TflO ■ S G T H s 6 T ¡*f s - thohson M628128 VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE ■ 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE • EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20,25ns ■ LOW Vcc DATA RETENTION: 2V

Contextual Info: 10-R0126PA015SC-M628F40 10-RZ126PA015SC-M628F41 1200V/15A flow90PACK 0 Features flow 90PACK 0 ● 90° PCB mounting for easy heat sink assembly ● Clip-in PCB mounting optional ● Open emitter for easy current sensing without clips Target Applications

B628

Abstract: 1 megabit 128K x 8 SRAM
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E)

MS28008

Abstract: QV-11 65536-BIT
Contextual Info: SGS-THOMSON M628008 * 7 1 iflD gi(Q [lLi TrK(Q)MD©i VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CM OS FAST SRAM W ITH OUTPUT ENABLE ■ EQUAL C YC LE AND ACCESS TIM ES: 10, 1 2 ,1 5 , 20ns ■ TRI-STATE COM M O N I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­

B628

Contextual Info: M628032 256K 32K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 32K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1

M628008

Abstract: 4A92
Contextual Info: n Z J SGS-THOMSON ^ 7# [» ^©itLigTTGMOigS M628008 VERY FAST CMOS 8K x 8 SRAM WITH OUTPUT ENABLE • 8K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 10, 12,15, 20ns ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mils PACK­

Contextual Info: S G S -1H 0M S 0N M628128 ^ 7 # RfflDMSItLIÊTnSORDDÊi VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE • 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

M628128

Abstract: SOJ32
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E) 400 mils DESCRIPTION

Contextual Info: Æ T r S G S - T H O M S O N * 7 # . [ « » ilL IM M IK ê a M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128Kx 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15,20ns LOW Vcc DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE

Contextual Info: M628032-20E1 1/2 IL08D C-MOS 256 K (32,768 x 8)-BIT SRAM —TOP VIEW— 10 A14 IN VDD 28 1 9 8 A12 IN 2 27 W IN 7 6 A7 IN 3 26 A13 IN 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 2 A3 IN 7 22 G IN 26 1 A2 IN 8 21 A10 IN A1 IN 9 20 E IN

Contextual Info: /T T S G S -T H O M S O N ^7# «»IILIIgTMDtg® M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE • 128K x 8 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

628128

Contextual Info: n Z J ^ 7 # S G S -T H O M S O N M628128 []^ o g ^ s [E L i ^ © i]a © i VERY FAST CMOS 1 Megabit (128K x 8) SRAM WITH O UTPUT ENABLE • 128K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15, 17, 20,25ns ■ LOW Vcc DATA RETENTION: 2V

AC w

Contextual Info: /= T ^ 7 # S C S -TH O M S O N M628032 ¡ M 0 ^ iŒ © '? [ E M D ê § VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT EN­ ABLE ■ EQUAL CYCLE and AC C ESS TIMES: 12, 15, 20ns ■ LOW Vcc DATA RETENTION: 2V

Contextual Info: 10-R0126PA015SC-M628F40 10-RZ126PA015SC-M628F41 Output Inverter Application flow 90PACK 0 1200V/15A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 32 Ω Rgoff = 32 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current

Contextual Info: M6288 Series 1 6 3 8 4 -w o rd X 4-b it High Speed CMOS S tatic RAM The Hitachi H M 6288 is a high speed 64k static RAM organized as 16-kword x 4-bit. It realizes high speed access time 2 5 /3 5 /4 5 ns and low power consumption, employing CMOS process

Contextual Info: M628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The M628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

HM628128LP-10

Abstract: HM628128LP-8 HM628128LFP-7 ah41 hm628128-10 HM628128T-7 M628128 DP-32 HM628128 HM628128FP-10
Contextual Info: M628128 Series - 13 10 72 -w o rd x 8 -b it H ig h S p eed C M O S S ta tic RAM The Hitachi HM 628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher d en sity, h igh er perform ance and low pow er consum ption by em ploying 0.8 Jim Hi-CMOS

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

HM62832HLP-35

Abstract: HM62832HLP-25 HM62832HP-25 62832H
Contextual Info: M62832H Series 32,768-word x 8-bit High Speed CMOS Static RAM HITACHI Features Pin Arrangement • High speed: Fast access time 25/35/45 ns max • Low power Active: 300 m W (typ) Standby: 10 |jW (typ) (L-version) • Single 5 V supply • Com pletely static memory

westinghouse breaker

Abstract: ND312T33W Cutler-Hammer Digitrip RMS 310 Westinghouse mcc 2100 Cutler-Hammer Digitrip RMS 310 trip unit Cutler-Hammer Digitrip RMS 310 rating plug 100-A18ND3 Cutler-Hammer hfd 65k Allen-Bradley SMC 150-A135NBD WESTINGHOUSE life line contactor
Contextual Info: CENTERLINE Motor Control Centers Renewal Parts Selection Guide Series ‘R’ Bulletin 2100 Units Series ‘D’ Bulletin 2400 Units SERIAL NUMBER AND SERIES LETTER INFORMATION YEAR 1971 1972 1973 1974 ‘‘ 1975 1976 1977 1978 1979 1980 1981 1982 1983