M8050-TRANSISTOR NPN Search Results

M8050-TRANSISTOR NPN Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

M8050-TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M8050 Abstract: m8050 NPN equivalent M8050 equivalent Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L M8050ation 800mA, 30MHz 25-Nov-2010 M8050 m8050 NPN equivalent M8050 equivalent	PDF
M8050 Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L 800mA, 30MHz 800mA M8050	PDF
M8050-TRANSISTOR Abstract: M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN Contextual Info: M8050 M8050 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	M8050 100mA 800mA 800mA, 30MHz M8050-TRANSISTOR M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN	PDF
m8050 Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8050 OT-23	PDF
M8050-TRANSISTOR Abstract: datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TRANSISTOR （ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V BR CBO : 40	Original	M8050 O--92 30MHz 270TYP 050TYP M8050-TRANSISTOR datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700	PDF
m8050 Abstract: M8050-TRANSISTOR To92 transistor m8050 NPN equivalent Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TO-92 TRANSISTOR NPN FEATURES Power dissipation 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter 2. BASE Value Units VCBO	Original	M8050 100mA 800mA 800mA, 30MHz m8050 M8050-TRANSISTOR To92 transistor m8050 NPN equivalent	PDF
y11 transistor Abstract: transistor y11 sot-23 .y11 transistor Contextual Info: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	M8050 OT-23 OT-23 100mA 800mA 800mA, 30MHz y11 transistor transistor y11 sot-23 .y11 transistor	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation m W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 1 A Collector-base voltage	Original	OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR m W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage 40 V V(BR)CBO:	Original	OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
FX3U-48M Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M Contextual Info: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)	Original	D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M	PDF
secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649	PDF