M8E0904E Search Results

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7241E-1A 4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE −NEPOC Series− 1-ch Optical Coupled MOS FET DESCRIPTION The PS7241E-1A is an optically coupled element that combines a GaAs infrared LED on the input side with a

Contextual Info: DATA SHEET PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS

2501 PHOTOCOUPLER

Abstract: PS2501-4-A MJ031 PS2501-1 PS2501-1-A PS2501-4 PS2501L-1 PS2501L-1-F3 PS2501L-4 PS2501L-1-A
Contextual Info: PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NP82N04MLG

Abstract: NP-82 82n04 NP82N04MLG-S18-AY NP82N04NLG-S18-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

A2792

Abstract: PA2792AGR
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NESG4030M14

Abstract: NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A
Contextual Info: NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

12-PIN

Abstract: HS350
Contextual Info: GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR BluetoothTM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

IC-520

Abstract: of msg NESG2031M16 NESG2031M16-T3 NESG2031M16-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

90N04

Abstract: NP90N04VLG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NJ931

Contextual Info: DATA SHEET PHOTOCOUPLER PS2505-1,-4,PS2505L-1,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES <R> −NEPOC Series− DESCRIPTION The PS2505-1, -4 and PS2505L-1, -4 are optically coupled isolators containing GaAs light emitting diodes and an

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7801M-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 3.4 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR Bluetooth TM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

Contextual Info: DATA SHEET PHOTOCOUPLER PS2815-1,PS2815-4 LOW AC INPUT CURRENT, HIGH CTR 4, 16-PIN SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2815-1 and PS2815-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

R7A marking

Abstract: NESG240033
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.

Contextual Info: DATA SHEET PHOTOCOUPLER PS9302L 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE 8-PIN SDIP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS9302L is an optically coupled isolator containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.

Contextual Info: DATA SHEET PHOTOCOUPLER PS2705A-1 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2705A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.

Contextual Info: DATA SHEET PHOTOCOUPLER PS2561B-1,PS2561BL-1 PS2561BL1-1,PS2561BL2-1 DIP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2561B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon