MA COM 4 PIN MMIC Search Results

Contextual Info: m an A M P com pany Low Noise Amplifier 1.575 GHz AM50-0002 V 2.00 Features SO-8 • Low Noise Figure: 1.1S dH fl B H H PIN E i a m 'k ia • High Gain: 27 dH -2284-2440 3 80 4 K » • Low P o w e r Consum ption: 5 to 5 V, 20 mA O rientation m a rk — _

Contextual Info: HMC332 / 332E v01.0705 MIXERS - SGL-BAL - SMT D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC332 / HMC332E is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8 dB • PCMCIA 9 GaAs MMIC MIXER w/ INTEGRATED

H271

Contextual Info: HMC271LP4 / 271LP4E v03.0809 1 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.7 GHz ATTENUATORS - DIGITAL - SMT 5 D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC271LP4 / HMC271LP4E is ideal for: 1 dB LSB Steps to 31 dB

H542

Contextual Info: HMC542LP4 / 542LP4E D E U N I T N O T C C S U I D D O PR v03.0809 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3 GHz Attenuators - DIGITAL - SMT 5 Typical Applications Features The HMC542LP4 E is ideal for: 0.5 dB LSB Steps to 31.5 dB

Contextual Info: HMC410MS8G / 410MS8GE D E U N I T N O T C C S U I D D O PR v02.0607 10 GaAs MMIC DOUBLE-BALANCED HIGH IP3 MIXER, 9 - 15 GHz Typical Applications Features The HMC410MS8G / HMC410MS8GE is ideal for: Conversion Loss: 8 dB • Long Haul Radio Platforms LO/RF Isolation: 40 dB

Contextual Info: Raytheon Electronics 2.4 GHz GaAs MMIC PA/LNA/Switch Package Data Advanced Information Lead# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 0.075 MAX M A X -l 0.015±0.002 0.055±0.010 • a 0.006±0.001 Jl J0.190±0.005 Ì1 n 0.234±0.005 ■

Contextual Info: HMC187MS8 / 187MS8E v05.0609 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 0.85 - 2.0 GHz INPUT Typical Applications Features The HMC187MS8 / HMC187MS8E is suitable for: Conversion Loss: 15 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 40 dB • LMDS, VSAT, and Point-to-Point Radios

ACU50750

Abstract: K/ACU50750
Contextual Info: • E MhDIGICS* G ñ m 577 DÜD0 S 7 T 2 fl2 ACU50750 50 - 860 MHz CATV/TV UPCONVERTER MMIC PRELIMINARY Your GaAs 1C Source FEATURES REV 5 FUNCTIONAL BLOCK DIAGRAM Integrated Monolithic Upconverter 6.0 dB Noise Figure 6 dB Conversion Gain High Linearity Small Size

Contextual Info: HMC305LP4 / 305LP4E v03.0809 0.5 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.8 GHz ATTENUATORS - DIGITAL - SMT 5 D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC305LP4 / HMC305LP4E is ideal for: 0.5 dB LSB Steps to 15.5 dB

Contextual Info: HMC165S14 v01.0101 GaAs MMIC SP4T SWITCH DC - 2.0 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC165S14 is ideal for: Low Insertion Loss: 0.4 dBm • Basestation Infrastructure Integrated 2:4 Decoder • CATV & DBS 14 Lead SOIC Package

UPD812

Abstract: IPC811 iPC812
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿ ¿ P C 8 1 1 9 T , ¿ ¿ P C 8 1 2 T GAIN CONTROL AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION /¿PC8119T and /¿PC8120T are silicon m onolithic integrated circuits designed as gain control am plifier. Due to 100

Contextual Info: Aßcjm m an A M P com pany Low Noise GaAs MMIC Amplifier 3.5 - 7 GHz MAAM37000-A1 V 2.00 CR-3 Features • • • • • • • 0.210 MIN 0.180 SO. 5.33 ORIENTATION MARK 1 (4.57) '' Low Noise Figure: 2.2 dB High Gain: 17 dB G ain Flatness: +0.5 dB Single Supply: +4 V

P12152E

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2708TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2708TB is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

GaAs SPDT IC FET

Abstract: SW-239TR MESFET Application
Contextual Info: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon­ able that operate to 3 GH z as analog attenuators, digital attenuators

Contextual Info: HMC160QS16 M IC R O W AVE C O R PO R ATIO N GaAs MMIC LOW DISTORTION DIVERSITY SWITCH DC - 2.0 GHz FEBRUARY 1998 Features General Description HIGH THIRD ORDER INTERCEPT: +54 dBm The HMC160QS16 is a low-cost diversity switch in a 16-lead QSOP package for use

Contextual Info: HMC279MS8G v02.0701 GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: v01.0101 HMC172QS24 GaAs MMIC SP6T SWITCH DC - 2.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC172QS24 is ideal for: Low Insertion Loss 1 GHz : 0.6 dB • Basestation Infrastructure Integrated 3:6 Decoder 24 Lead QSOP Package

4f05

Contextual Info: HMC189MS8 / 189MS8E v03.0709 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 2 - 4 GHz INPUT D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC189MS8 / HMC189MS8E is suitable for: Conversion Loss: 13 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 33 dB

H224

Abstract: HMC224MS8E 224MS8E HMC224MS8 alpha OM-338 application notes
Contextual Info: HMC224MS8 / 224MS8E v02.0805 GaAs MMIC T/R SWITCH 5 - 6 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC224MS8 / HMC224MS8E is ideal for: Low Cost 5-6 GHz Switch • UNII & HiperLAN Ultra Small Package: MSOP8 • PCMCIA WirelessLAN

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ESC R IPTIO N The ¿iPC2776TB is a silicon monolithic integrated circuits designed as w ideband amplifier. impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band.

ACCU-P0603

Abstract: 100uH SMD p0603 CGY96
Contextual Info: S IE M E N S GaAs MMIC CGY96 Prelim inary Datasheet *Power am plifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage am plifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, sim ple output match

Contextual Info: HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 8 D E U N I T N O T C C S U I D D O PR Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER D E S C R IP T IO N /¿PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.