MA01581 Search Results

Contextual Info: EDI8L3265C ZE D Ì, S4Kx32 SRAM EtECWONC DOWNS NC. 64Kx32CMOSHigh Speed StaticRAM Features 64Kx32 bit CMOS Static The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array. Four Byte Selects, two Chip Enables, Write Control, and

29f016

Contextual Info: o \ EDI7F332MC ELECTRONIC DESIGNS, INC. 2Megx32 W 2Megx32 Flash Module Block Diagrams The EDI7F332MC and EDI7F2332MC are orga­ nized as one and two banks of 2 meg x 32 respec­ EDI7F332MCSNC 2Megx3280pinSlMM tively. fine modules are based on A M D s AM 29F016

CC650

Abstract: H1-200-5
Contextual Info: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read

3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory

a7w 3 PIN

Abstract: a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34
Contextual Info: EDI816256VA-RP m 256Kx16SRAM x ^ ELECTRONIC DESIGNS, INC. • RuggBdized Plastic ADVANCED 256Kx1B Static RAM CMOS, Monolithic Features The EDI816256VA is a 3.3 volt ruggedized plastic 256Kx16 bit CMOS Static 256Kx16 SRAM that allows the user to capitalize on the

intel organisational structure

Abstract: intel 8274 PLC using ARM based PROJECTS 20-F ARM10 FRS11 ARM9 cash register mic epe plessey application note an 112 bipolar ROM
Contextual Info: 55078COVER 9/3/99 3:56 pm Page 1 ARM Holdings plc ANNUAL REPORT AND ACCOUNTS 1998 ARM Holdings plc 90 Fulbourn Road, Cambridge CB1 4JN 55078PRE1 Design 11/3/99 11:02 pm Page iii ARM designs and licenses high performance, low cost, power efficient RISC microprocessors, related technology

Contextual Info: m EDI8F32259V a 256KX32 SRAM Module ELECTRONIC DESIGNS. INC. ADVANCED Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times CMOS: 12,15 and 20ns • Individual Byte Selects • Fully Static, No Clocks

10592

Contextual Info: ^ E D I EDI8G321024V 1024KX32 SRAM Module ELECTRONIC DESIGNS, IN C 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12,15,17, and 20ns • Individual Byte Selects • Fully Static, No Clocks

EC09

Abstract: 663G
Contextual Info: ^ E D EDI7F4334MC I 4x4Megx32 ELECTRONIC DESIGNS. IN C 4x4Megx32 Flash Module Block Diagrams The EDI7 F4334M C is organized a s a 4 x 4 M e g x 32 module which is based on A M D s A M 2 9F 0 1 6 - 2 M e g EDI7F4334MCSNC 4X4Megx3280pin SIMM x 8 Flash device in T S O P packages which are

Contextual Info: EDÍ681MC m D t UV RECTROMC DESH5N& N C Features 8 Megabit 1UxS Erasable CMOS EPROM 8 Megabit (1Mx$ UV Erasable CMOS EEPROM Fast Read Access Time - 90ns The EDI681C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read