MA107 Search Results

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Abstract: MA10705 IR 2153
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10705 Silicon epitaxial planer type Unit : mm For high-frequency rectification 4.4±0.3 • Features Mini-Power type package (2-pin) 2 1 voltage) type : VF < 0.37V(at IF=1.0A) +0.1 0.25–0.05 ● Low VF (forward 1.4±0.2

MA10704

Abstract: MA2J704 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features

MA10700

Abstract: MA3J700
Contextual Info: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D798 (MA10798) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

Contextual Info: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

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Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V (at IF = 1 A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 2 0.5±0.1 0.16+0.1 –0.06

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible

panasonic ma diodes sc-59 Marking

Contextual Info: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary

50Hz sine wave generator

Abstract: MA10701 MA10701 SCHOTTKY diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 ● type package (3-pin)

MA10702

Abstract: MA3J702
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1

MA10704

Abstract: MA2J704
Contextual Info: Schottky Barrier Diodes SBD MA2J704 (MA10704) Silicon epitaxial planar type Unit : mm For super-high speed switching circuit Reverse voltage (DC) 0.4 ± 0.1 Symbol Rating Unit VR 20 V VRRM 20 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward

MA10799

Abstract: MA3D799
Contextual Info: Schottky Barrier Diodes SBD MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 4.6 ± 0.2 9.9 ± 0.3 3.0 ± 0.5 15.0 ± 0.5 • Features φ 3.2 ± 0.1 1.4 ± 0.2 13.7 ± 0.2 4.2 ± 0.2 • TO-220D package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible

diode m2w

Abstract: MA10700 MA3J700
Contextual Info: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible

Contextual Info: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit

TO-220D-A1

Contextual Info: Schottky Barrier Diodes SBD MA3D798 (MA10798) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip • IF(AV) = 20 A rectification is possible

MA10700

Abstract: MA3J700
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1

MA10799

Abstract: MA3D799
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5

Contextual Info: Panasonic Schottk y Barrier Diodes SBD MA10798 Silicon epitaxial planer type (cathode co m m on ) U nit : mm For switching power supply 4 .6 + 0 .2 , 9 .9 + 0 .3 . I Features ► TO-220D package 0 3 . 2 + 0.1 > I f (a v ) = 2 0 A rectification possible ►

MA3X701

Abstract: MA10701
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 2 (0.65) ue pl d in an c se ed lud pl