MA30 Search Results

Contextual Info: MA3008K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3008K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3018P10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3016AM6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3016AM6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3024M6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3024M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Contextual Info: MA3007V10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3007V is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

phonograph preamplifiers

Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
Contextual Info: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed

DARLINGTON TRANSISTOR ARRAY

Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed

MA3000 Series

Abstract: MA3000 MA3450 Shindengen Electric Mfg.* case ma7
Contextual Info: SHINDENGEN Power Switching Regulators MA3000 Series OUTLINE DIMENSIONS MA3450 Case : MA7 Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Operating Temperature Junction Temperature Symbol Tstg Top Tj Peak Input Voltage Vin Input Current

Contextual Info: MA111 Zener Diodes Composite Elements MA3075T Silicon planer type Unit : mm +0.2 2.8 –0.3 +0.25 0.65±0.15 +0.1 1.5 –0.05 0.4 –0.05 1.45 0.65±0.15 0.5R 1 0.5 0.95 0.95 2 3 +0.1 0.4 –0.05 +0.2 type package 4-pin anode-common wiring of MA3075 +0.1

stv3h

Abstract: S3016R S3016-R MA27T-A STV-3H STV2H MA27T-B MA29-B MA27W-A STV-2H
Contextual Info: - 276 - Ä A Æ mma » iï ftft £ MA27T-A MA27T-B MA27W-A MA27W-B MA28-A MA28-B MA28T-A MA28K-A MA29-A MA29-B MA29Q-A MA29Q-B MA29T-A MA29T-B MA29W-A MA29W-B MA30-A MA30-B MA30W-A m ov-B MV—1 MV—11 MV—103 MV-104V S3016-R tt « m fâT fò T fôT P nW>

75150

Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE

MA301A

Abstract: A307 A348 mA748c OA21 715C MA709C mA324 MA3401 MA748
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA1 /iA302, mA310, mA714C/E/L L-OA2 MA307 L-OA3 mA308, mA308A NC vMetal Can and Mini-Dip Connection Shown L-OA4 MÄ702C L-OA5 mA709C IN FREQ COMP L-OA6 MÄ725C/E n cK F T TAB V- Metal Can and Mini-Dip Connection Shown

STV2H

Abstract: STV-3H SV03YS MA27T-B STV3H STV-3 STV-2H S3016R KT 117B MA28
Contextual Info: - 276 - Ä A Æ mma » iï ftft £ tt « PSM m MA27T-A MA27T-B MA27W-A MA27W-B MA28-A MA28-B MA28T-A MA28K-A MA29-A MA29-B MA29Q-A MA29Q-B MA29T-A MA29T-B MA29W-A MA29W-B MA30-A MA30-B MA30W-A mov-B MV—1 MV—11 MV—103 MV-104V S3016-R ST05-16 ST05-27 S TV-2H 0

MA2560

Abstract: MA3056L MAS 560 KT 200 MA3120/M MA3047L MA2510 MA3056 MA3022 MA3024
Contextual Info: - 240y * m MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L MA3120 MA312 0 L

uA376

Abstract: A305 A3761 MINI DIP ua105 ua305 A105 A376 MA105
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • ¿ A 105 • juA305 • juA305A • /iA376 MA305A E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25°C unless otherwise specified Note 2 PARAMETER C O N D IT IO N S M IN TYP MAX U N IT S Input Voltage Range 8.5

varistors panasonic

Contextual Info: Varistors MA3Z030 Series MA30 Series Silicon epitaxial planar type variable resistor 0.7±0.1 Unit : mm 1.25±0.1 0.35±0.1 For reduced voltage and temperature compensation 1 • Features 2 0.5±0.1 0.16+0.1 –0.06 5° 0.4±0.1 5° 2.5±0.2 1.7±0.1 0 to 0.1

Contextual Info: Variable Capacitance Diodes MA2Z304 MA304 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 For VCO 2 1 0.9±0.1 Unit Reverse voltage (DC) VR 30 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.00±0.05 Rating 0.90±0.15

MA3075WALT1

Contextual Info: MA3075WALT1 Preferred Device Zener Transient Voltage Suppressor SOT–23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as

MA3082

Abstract: MA3082WA
Contextual Info: MA111 Zener Diodes Composite Elements MA3082WA Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit +0.25 1.5 –0.05 1.9±0.2 1.45 3 +0.1 0.4 –0.05 anode-common wiring of MA3082 0.95 ● Two ue pl d in an c

zener 6v diode

Abstract: MA3091 MA3091WK
Contextual Info: MA111 Zener Diodes Composite Elements MA3091WK Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit 1.45 0.95 1 3 +0.1 0.4 –0.05 cathode-common wiring of MA3091 1.9±0.2 ● Two 0.65±0.15 0.95 +0.2 2.9 –0.05

speed sensor used

Abstract: 202F 204D MS3106
Contextual Info: MA3055 High Temperature VRS Sensor, Sealed Front-End, 6,4 mm [0.250 in] diameter, 5.2 Vp-p, -73 ºC to 230 ºC [-100 ºF to 450 ºF], 36 DP module 0.70 or coarser, 70 kHz, 25 mm [1.00 in] approx. length Actual product appearance may vary. Features Self-powered operation

Contextual Info: MA3014N30000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3014N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter