MA39 Search Results

MA393

Abstract: MA2Z393
Contextual Info: Variable Capacitance Diodes MA2Z393 MA393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 2 5° (0.4) 1 • Absolute Maximum Ratings Ta = 25°C 1.25±0.10 Unit Reverse voltage (DC)

MA2Z391

Abstract: MA391
Contextual Info: Variable Capacitance Diodes MA2Z391 MA391 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 1.7±0.10 • Features 5° (0.4) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MA2Z391

Abstract: MA391
Contextual Info: Variable Capacitance Diodes MA2Z391 MA391 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 5° • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation (0.4)

Contextual Info: Variable Capacitance Diodes MA2Z391 MA391 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 (0.4) M Di ain sc te on na tin nc ue e/ d • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

diode marking 7n

Abstract: MA392
Contextual Info: MA111 Variable Capacitance Diodes MA392 N type GaAS epitaxial planer type Unit : mm For transmitter VCO INDICATES CATHODE ● Large capacity variation ratio during low-voltage operation 1 0.4±0.15 2 +0.1 Small series resistance rD and high Q value 0.3 -0.05

Contextual Info: Variable Capacitance Diodes MA2Z393 MA393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 Junction temperature Tj Storage temperature Tstg Unit 10 V 50 mA 125 °C −55 to +125 °C (0.4) 7° 0.9±0.1

MA2Z393

Abstract: MA393
Contextual Info: Variable Capacitance Diodes MA2Z393 MA393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: Variable Capacitance Diodes MA2Z391 MA391 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 5° M Di ain sc te on na tin nc ue e/ d • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

MA2Z393

Abstract: MA393
Contextual Info: Variable Capacitance Diodes MA2Z393 MA393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 • Absolute Maximum Ratings Ta = 25°C 1.25 ± 0.1 2.5 ± 0.2 Unit VR 10 V Forward current (DC)

MA2Z391

Abstract: MA391
Contextual Info: Variable Capacitance Diodes MA2Z391 MA391 N type GaAs epitaxial planar type Unit : mm INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 • Absolute Maximum Ratings Ta = 25°C 2.5 ± 0.2 Unit VR 10 V Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature

MA2Z392

Abstract: MA392
Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 • Absolute Maximum Ratings Ta = 25°C 2.5 ± 0.2 Unit VR 10 V Forward current (DC) IF 40 mA Junction temperature Tj 125 °C Storage temperature

MA393

Contextual Info: MA111 Variable Capacitance Diodes MA393 N type GaAS epitaxial planer type Unit : mm For transmitter VCO INDICATES CATHODE ● Large capacity variation ratio during low-voltage operation 1 2 +0.1 Small series resistance rD and high Q value 0.3 -0.05 ● 1.25±0.1

Contextual Info: MA393E Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)50m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)75þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° M Di ain sc te on na tin nc ue e/ d 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: Variable Capacitance Diodes MA2Z393 MA393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° M Di ain sc te on na tin nc ue e/ d 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

MA391

Abstract: marking 7S
Contextual Info: MA111 Variable Capacitance Diodes MA391 N type GaAS epitaxial planer type Unit : mm For transmitter VCO INDICATES CATHODE ● Large capacity variation ratio during low-voltage operation 1 0.4±0.15 2 +0.1 Small series resistance rD and high Q value 0.3 -0.05

MA1051

Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Contextual Info: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC

ras 0610 relay

Abstract: relay sm1 SH7712 RBL 43 P 530 SE SH7710 S273S
Contextual Info: User's Manual 32 The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7710, SH7712, SH7713 Group User’s Manual: Hardware Renesas 32-Bit RISC Microcomputer SuperHTM RISC engine Family / SH7700 Series

construction of varactor diode

Abstract: MA393 MC12147 MC12147D MC12147SD MC12202 Nippon capacitors
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

PIR alarm system

Abstract: txal* 228 bs ADE-602-096B dp83848 application 264 bf BT 816 cd0a2 un 816 i 336 SH7700 DP83848
Contextual Info: REJ09B0288-0150 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7713 32 Hardware Manual TM SuperH

txal* 228 bs

Abstract: CD 5888 CB CD 5888 BU 808 DX 851 A24 h2a SH7712 cd0a2 DST 09 PFC1 Nippon capacitors bcd to seven segment circuit diagram
Contextual Info: REJ09B0269-0100 SH7712 32 Hardware Manual TM SuperH Renesas 32-Bit RISC Microcomputer RISC engine Family / SH7700 Series SH7712 Rev.1.00 Revision Date: Dec. 27, 2005 HD6417712 Rev. 1.00 Dec. 27, 2005 Page ii of xlii Keep safety first in your circuit designs!

MHT5002

Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I