MA4 DIODE Search Results

Series MA4/BA491/1N5000 Silicon General Purpose 3.0 AMP Diodes

Abstract: diodes ba4918 ba4913 ba49180 ba4916 ba4912 ba4914 1N5000 1N5402
Contextual Info: EDAL SERIES MA4/BA491/1N5000 SILICON GENERAL PURPOSE 3.0 AMP DIODES INCHES MIN. MAX. 0.048 0.052 0.19 0.21 0.285 0.375 1.00 DIM. A B C D STYLE Io 3 Amp @ Is 200 AMPS Vf 1.3 max. v@ Ir 25 uA max. 50 3.0 amp @ @ PIV @ MILLIMETER MIN. MAX. 1.02 1.30 4.80 5.30

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MASW110

Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

FF100R12YT3

Contextual Info: Technische Information / technical information FF100R12YT3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# # ! $ % % % 8 # ! = # , > = % "# # $ 9 # % $ &' *+

Contextual Info: Technische Information / technical information FS50R12W2T4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! ! " # # # ! * 8 " = ! + > # = # ! ! " 9 ! 9 $%& ' *

Contextual Info: an A M P com pany Surface Mount PIN Diode MA4CP101A High Sigma V4.00 Features • • • • • SOT-23 High Performance PIN Diode Designed for High Volume Pick and Place Assembly Low Profile Surface Mount Package High Quality Products Defect Rate Less than 50 PPM

sot 14L

Abstract: sot-23 ma4
Contextual Info: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band

f2601

Contextual Info: This material and lhe information herein is he properly of F uji Electric Co.Ltd.They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for (he use of ;iny third portynor usod (or the manufoc turing purposes wiihout the express written consent of F uji Electric Co. Li d

diode marking jz

Abstract: ESAC25M-02N ESAC25M-02C silicon diode ESAC25M-02D fuji electric marking MK5C18187 ESAC25M02C ESAC25M02D
Contextual Info: ES A C 2 5 M—0 2 C , N , D ESAC 25 M—O^tC, N , D FUJI SILICON DIODE 1. SPECIFICATION SCOPE This specification provides the ratings and the test requirement for silicon diode 2. OUT VIEW Body surface shall be smooth and free of contamination.-Dimensions

Contextual Info: A73P24P01 Preliminary Mouse, Keyboard Transmitter Document Title Mouse, Keyboard Transmitter Revision History Rev. No. 0.0 History Issue Date Remark Initial issue January 3, 2002 Preliminary Important Notice: AMIC reserves the right to make changes to its products or to discontinue any integrated circuit product or

SICK WS 150

Abstract: SICK WE9 W9 diode photo-electric switch push button switch 4pin N330 N430 P330 P430 push button switch 2 pin
Contextual Info: Product series W9 Laser Photoelectric proximity switch BGS Photoelectric reflex switch W9 L: Laser photoelectric switches: small, light and reliable Through-beam photoelectric switch Objects as small as hairs are detected just as reliably as fast operations are

md7130

Abstract: smd DIODE B34 diode u2 a54 smd a60 B49 diode smd B34 diode smd B45 diode smd smd b38 B34 SMD Transistor DP83816
Contextual Info: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP RJ45 C MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM These schematics are provided for reference only. For any designs based on these schematics always contact National Semiconductor Corporation BEFORE initiating PCB

diode u2 a54

Abstract: diode c25 B49 diode smd Diode 133 B34 smd b38 smd DIODE B34 A29 SMD B45 diode smd DP83816 MA6 diode
Contextual Info: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP C RJ45 MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM SERIAL EEPROM A A National Semiconductor - Wired Communications Group Title 10/100 Mb/s Ethernet MacPHYTERII DP83816 Demo Board (Amber)

Beckman ra6

Abstract: A17 ZENER diode MA6 rs232 driver RM73B3A BLM21A121SP zener rohm C119 C120 DS34C86T R106
Contextual Info: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E D C Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.

WL8G-P2231

Abstract: WL8-P2131 WL8-P2231 SICK WL8G-P2231 PL20F WL8G-P2131 WL8G-N2131 WL8G-N2231 P1131 P2131
Contextual Info: DB_W8_en.fm Seite 1 Donnerstag, 15. November 2007 7:49 07 Product series W8 Photoelectric proximity switch BGS Photoelectric reflex switch W8 series miniature photoelectric switches: Small, fast and secure at close range enables a fast response time where

Zener Diode BA11

Abstract: SFs SOT23-3 zener diode A29 flyback transformer design for mosFET Zener Diode BA19 Beckman ra6 PAH25 74ac126 PAH18 router board r52 hn
Contextual Info: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E Rev 1.0: Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.

WL100L-F2131

Abstract: WT100L-F2241 WL100L-F2241 WL100L-F2231 702 pnp 3pin WE-100 SICK distance sensor WL100L-E1131 WT100L-F2141 WE-100l-e2231
Contextual Info: Photoelectric proximity switch, WT100 Laser, energetic Dimensional drawing 20 Laser sensor in mini-format 1 2 31 25.4 Easy alignment by Class 2 red light laser 11 3 Photoelectric proximity switch 13.4 19.8 Scanning distance 0 . 450 mm 3 1 2.8 10.3 Switching frequency 2000 Hz

1990-0730

Contextual Info: INTEGRATED CIRCUITS 74F657 Octal transceiver with 8-bit parity generator/checker Product data Supersedes data of 1990 Jul 30 Philips Semiconductors 2003 Feb 04 Philips Semiconductors Product data Octal transceiver with 8-bit parity generator/checker 74F657

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF100R12YT3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !F3EF2"#CEE32$1322D14% F3EF23#CEE326FE4%3

i r 032p

Contextual Info: MA4E2062 Series M/A-COM Preliminary Specifications Silicon Schottky Diode Ring Quads Features • • • • • • • A IÂ C G H æ r f Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions High Reliability and Mechanically Rugged

D1N916

Abstract: la1 d22 a65 d1n916a EPM 205 thermal printer controller jeida v4.1 GD75232SOP virge GD75232S txc 14.318MHZ GD 75232 DATASHEET
Contextual Info: Point of Sale Terminal Design Guide Application Note May 1998 Order Number: 273170-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

5608F5

Abstract: sfs sot23 AM186CC SP211ECT SP211HCT usbFB sot-23 diode m9 79C32 prm 100k 7C53
Contextual Info: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Cover Sheet Am186CC DRAM, FLASH ISDN Interface PC Interface - DCE, USB Power, Crystal, TIP, Misc. NOTE: This schematic shows the S/T ISDN interface population option. A A ISDN Terminal Adapter Reference Design

ic 1496 specifications

Abstract: MAT14 ADR01 MS-012-AB OP1177 MAT14ARZ transistor IREF 460 log and antilog amplifier
Contextual Info: Matched Monolithic Quad Transistor MAT14 Low offset voltage: 400 µV maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 100 Hz, 1 mA 3 nV/√Hz maximum Excellent log conformance Bulk resistance rBE = 0.6 Ω maximum

Contextual Info: Matched Monolithic Quad Transistor MAT14 Low offset voltage: 400 µV maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 100 Hz, 1 mA 3 nV/√Hz maximum Excellent log conformance Bulk resistance rBE = 0.6 Ω maximum