MA42 Search Results

Contextual Info: MA42191-510 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)3.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA4273G Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.47p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage110 Q Factor Min.100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)0.5 Semiconductor MaterialSilicon Package StyleAxial-D

MA42120

Contextual Info: Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power

2n6618

Abstract: MA42161 FOR5
Contextual Info: Silicon Low Noise Bipolar Transistors MA42160 Series Description Nominal fT - 7 GHz Nominal Current Range - 0.5 to 7 mA Iq Max. - 20 mA Frequency Range - 500 MHz to 4 GHz Geometry - 72 The MA42161 is a low noise silicon planar epitaxial tran­ sistor for.5 to 4.0 GHz amplifiers. These transistors feature

Contextual Info: MA4204S10000000 Dual N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4204S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA42261-287 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42110-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42267-287 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42120-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)80m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42141-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)27 I(C) Max. (A)50m Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42008-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42110-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42110-512 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42268-287 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42112-510 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42113-510 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63

MA42197

Contextual Info: Silicon Low Noise Bipolar Transistors MA42197 Series Description Nominal FT « 2.5 GHz Nominal Current Range = 5 to 40 mA IC Max. « 100 mA Frequency = 30 MHz to 600 MHz Geometry = 60 The MA42197 NPN silicon planar bipolar transistor is designed to provide low noise figure and high gain at low

MA42191

Abstract: MA42151
Contextual Info: Silicon Low Noise Bipolar Transistors MA42151 and MA42191 Series Description Nominal fT — 4.5 GHz Nominal Current Range - 1 to 10 mA Iq Max. - 100 mA Frequency - 300 MHz to 2.0 GHz Geometry - 63 These NPN planar transistors are characterized for local oscillator use in to 1.0 to 3.0 GHz range. The MA42151

MA42056

Abstract: 42056
Contextual Info: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF

Contextual Info: M/A-COM SEMICONDtBRLNGTON 11 D m Silicon Low Noise Bipolar Transistors Sh42214 000144^ 1 • M I C ■ ■ MA42110 Series Description T -3i- Nominal fT - 5.5 GHz Nominal Current Range - 3 to 20 mA Iq Max. - 125 mA Frequency Range - 100 MHz to 1.5 GHz Geometry - 60

Contextual Info: MA42025-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42111-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42026-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)