MA420 Search Results

Contextual Info: MA4204S10000000 Dual N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4204S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA42008-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MA42001-509

Contextual Info: MA42001-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MA42056

Abstract: 42056
Contextual Info: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF

Contextual Info: MA42025-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42026-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42015-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MA42014

Contextual Info: MA42014-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42010-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42008-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42004-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2N6665

Abstract: MA42001-509 MA42001 MA42010
Contextual Info: Silicon Low Noise Bipolar Transistors MA42000 Series Description NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750 MHz. These transistors have flat noise figures over a wide

2N2857 Model

Abstract: 2N3570
Contextual Info: n i> — • sb4E5m D D o m s a i mmc — Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description n / A ~ c o r i s e m i c o n D t BRl n g t o n r - ’J i- « ' Nominal fT - 1.8 GHz Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency > 1 0 MHz to 600 MHz

Contextual Info: 11 T> m Sb4E514 MA42000 Series Description 000145D Ö « n i C M/A-COM Silicon Low Noise Bipolar Transistors SEMICOND-iBRLNGTON . T ' 3 I ~ *? NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750

Contextual Info: MA42005-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

S-parameter 2N5179

Abstract: s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter
Contextual Info: Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description Nominal fT - 1.8 G H z Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency - 10 M H z to 600 M Hz Geometry - 20 This series of N PN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain

Contextual Info: MA42020-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42028-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MAB360

Abstract: mab100 MA4056 MA8051 MA4062 MA4062(H)-72 MA4100 MA4075N MA8027 MA4068(L)-Y
Contextual Info: Diodes # Zener Diodes MA4000 N Series (Low Noise, Low Operating Resistance) Zener Voltage V z(V ) 4.42- 4.90 4 .84- 5.38 5.32- 5.92 5.866.477.077.77- 6.53 7.14 7.83 8.63 8.57- 9.53 9.47- 9.85 10.45-11.56 11.43 -12.58 12.46-13.96 13.84 -15.51 15.38-17.08 16.94 -19.02

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

W574

Abstract: TFK 840 mag mount cellular antenna dual band blade antenna block diagram for amateur radio WR 137 antenna NMO470C WD30S WKG144 WT63
Contextual Info: When selecting a mobile antenna, there ate a number of factors to take into consideration that significantly effect the ultimate performance of the antenna Gain requirements, electrical type, ground plane availability vs. requirements, placement on vehicle temporaiyvs, permanent mounting,

MA4360M

Abstract: MA4068L MA4051M MA4130L MA4240H MA4270H MA4160M MA4062M MA4120M MA4180M
Contextual Info: Zener Diodes MA4000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.45 max. ● 5mm pitch insertion possible ● Wide voltage rank which is further subdivided. ● Sharp rising performance ● Wide voltage range : VZ = 2.0 to 39V

MA2560

Abstract: MA3330 MA1180 Panasonic MA1056 MA1033 ma4300 zener panasonic diode MA4020 MA8180 DIODE D29
Contextual Info: Diode # Zener Diodes Line-up Zener Voltage Vz V MA1000 Series DO-35 (D28) PD = SOOmW MA2000 Series DO-41 (D29) PD = 1W MA3000 Series Mini Type 3 pins (D12) P d = 500mW 1 .8 8 - 2.24 MA1020 MA4020 2 .0 8 - 2.45 MA 1022 MA4022 2 .2 8 - 2.70 MA1024 MA3024 MA4024