MA4E9 Search Results

Power Diode 818

Abstract: ma4e928 "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ASI3486 HSCH3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928series • -56 dBm TSS Typical @ 10 GHz

Contextual Info: MA4E974L270 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

Contextual Info: MA4E974L272 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

MA4E931Z2-1261A

Contextual Info: MA4E931Z2-1261A Schottky Zero Bias Detector Diode Rev. V2 Features • Can be used without external DC bias  Exhibits uniform Rv characteristics  High Voltage Sensitivity  P Type Schottky Diode  Available in chip form ODS-1261

MA4E931

Abstract: MA4E931Z2-1261A J017 detector diode ODS-1261
Contextual Info: tijcaj Electronics ¿ ¡ f a c o n Schottky Zero Bias Detector Diode MA4E931Z2-1261A Features • • • • • Can be used without external DC bias Exhibits uniform Rv characteristics High Voltage Sensititivity P Type Schottky Diode Available in chip form ODS-1261

Contextual Info: MA4E974L1012 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

Contextual Info: AfaCÔM Preliminary Specification m an A M P com pany Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series V 2.00 Features Case Styles • Sm all P hysical Siz e fo r M icrostrip M ounting • H igh Reliability • C losely M atch ed Ju n c tio n s fo r High Iso latio n

ma4e928

Abstract: ASI3486 10 GHz pin diode HSCH3486 color code diode HSCH-3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928 series • -56 dBm TSS Typical @ 10 GHz

hsch 3486 zero bias schottky diode

Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Contextual Info: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54

MA4E204H

Abstract: MA4E201M MA4E207L MA4E201L-270 MA4E204L MA4E970 MA4E207M
Contextual Info: Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series V3.00 Features ● ● ● ● ● Case Styles Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation Three Diode Barrier Heights are Available

Contextual Info: MA4E979L272 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5Â

Contextual Info: MA4E979H272 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5Â

Contextual Info: MA4E977H272 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

MA4E201

Contextual Info: an A M P com pany Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series V 3.00 Features • • • • • Case Styles Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation Three Diode Barrier Heights are Available

ODS-186

Abstract: MA4E932B ODS-119 ODS-186 outline MA4E929 MA4E929A-119 MA4E929B-119 MA4E932 zero bias schottky diode detector MA4E932B186
Contextual Info: MA4E929, MA4E932 Schottky Zero Bias Detector Diodes M/A-COM Products Rev. V1 Case Styles Features • Can Be Used Without External Bias • Exhibits Uniform Rv Characteristics • Available In ODS–119 and ODS-186 Hermetic Ceramic Packages • P Type Schottky Diode

Contextual Info: MA4E977M272 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

Contextual Info: MA4E914-276 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq24G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5 Maximum Conversion Loss (dB)

Contextual Info: MA4E974L1000 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

Contextual Info: MA4E977M270 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0Â

MA4E201

Contextual Info: an A M P com pany Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series V3.00 Features • • • • • Case Styles Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation Three Diode Barrier Heights are Available

Contextual Info: A fà ü m m an A M P com pany Zero Bias Detector Diodes V 2.00 Case Styles Features See appendix for complete dimen­ sions • C an B e U sed W ith o u t E x tern al D C B ia s • E xhibit U niform Rv C h aracteristics • High V oltage Sensitivity • A v ailab le in P a ck a g es, C hips an d B e a m Leads

Contextual Info: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC

Contextual Info: an A M P company Silicon Schottky Mixer Diode Chips V 2.00 Features Case Styles • Multi-Junction Chip for Higher Yield • Low Noise Figure Through 26 GHz • Small Jun ction Capacitance • Low and Medium Barrier Diodes Description 135 This series o f chip silicon Schottky m ixer diodes have gold

Contextual Info: MfaCQm m an A M P com pany Silicon Schottky Mixer Diode Chips Case Styles Features • • • • Multi-Junction Chip for Higher Yield Low Noise Figure Through 26 GHz Small Junction Capacitance Low and Medium Barrier Diodes Description This series of chip silicon Schottky m ixer diodes have gold