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MA5101

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

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Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: SiG E C P L E S S E Y SE M I CO N D U CT O RS DS3579-2.3 MA5101 RADIATION HARD 256 X 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3jam technology. The design uses a 6 transistor cell and has full static operation with

Contextual Info: GEC PLESSEY S V M I c; O N l IJ , I () K m a s io i Radiation Hard 256x4 Bit Static RAM s S10304FDS Issue 1.2 October 1990 Features • 3|im CMOS-SOS technology — — Address Butler» • Latch-up free Cell Array 32 R o m tt Columns Row Decoders (Enable)