MAG 613 Search Results

DM2-2400

Abstract: TIA-329 wifi band radome
Contextual Info: Surface Mount & Mag-mount 2.4 & 4.9-6.0 GHz • Available in Single band 2.4 GHz and Dualband 2.4/4.9-6 GHz DM Series in white MGD Dual band Mag Black Only ■ Ground plane independent omni configuration ■ Rugged and attractive low profile ASA radome DM Series in black

MEC0381V3-0000-A99

Contextual Info: SUNON SPECIFICATION FOR APPROVAL v _ / CUSTOMER MOTOR TYPE & DESCRIPTION Mag Lev Motor Fan DIMENSIONS 120X120X38 mm MODEL MEC0381V3-0000-A99 SUNON SPEC. NO. D12012460G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER

RJ45 USB

Abstract: schematic usb to rj45 schematic rj45 to usb 1-100MHZ
Contextual Info: 10/100 BASE-T Module with Dual USB RJ-45/USB 8321-8323 • Complies with IEEE standards and all 10/100 Ethernet specifications including 350µH with 8mA DC bias • Various turns ratio options available • Integrated Mag-modular design provides higher reliability and conserves

RJ45 USB

Abstract: schematic usb to rj45 8326 schematic rj45 to usb
Contextual Info: 10/100 BASE-T Module with Dual USB RJ-45/USB 8324-8326 • Complies with IEEE standards and all 10/100 Ethernet specifications including 350µH with 8mA DC bias • Various turns ratio options available • Integrated Mag-modular design provides higher reliability and conserves

Contextual Info: Available as: RF AMPLIFIER MODEL TM6131 TM 6131, TN6131, FP6131, BX6131, 4 Pin TO-8 T4 4 Pin Surface Mount (SM3) 4 Pin Flatpack (FP4) Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept P oint

Contextual Info: RF AMPLIFIER MODEL TM6334 Available as: TM 6134,4 Pin TO-8 T4 TN6134-3 4 Pin Surface Mount (SM3) FP6134-4, 4 Pin Flatpack (FP4) BX6134, Connectorized Housing (H1) _ ^ ^ _ ^ ^ ^ _ _ P N 6 3 3 4 J_Reduced^ize^urface_MountJSM11j_ Features • ■ ■ ■ High Output Power: +26 dBm Typ.

AMMP-6130

Abstract: TL11 TL12 TL13 TL15 TL21 TL22 30433 152082
Contextual Info: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication systems. The MMIC takes an input 15

76478

Abstract: 152082
Contextual Info: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication systems. The MMIC takes an input 15

Contextual Info: DATA SHEET PS088-315: LGA Packaged Phase Shifter Features Connection Diagram 700–1100 MHz frequency band ● 85–105-degree phase shift range ● 1.5 dB insertion loss variation ● 0–12 V control voltage range ● Specified 33 dBm IP3 @ 900 MHz ● Small footprint LGA package

EZ 707

Abstract: 2SC3544 EZ 0710 EZ 728
Contextual Info: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

Voltage Doubler with 555 circuit

Abstract: Ko 368 "Frequency doubler" b 537 002 545 18 05 KO 686 single phase to three phase conversion in 3 phase zo 107 AMMP-6130 TL11
Contextual Info: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication

bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a

Transistor 78 L 05

Contextual Info: P h ilip s Sem ico n d u cto rs b b S B IB l 0031556 036 • APX Product sp ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE fe.'lE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SO T 122A envelope with a ceramic cap. All leads are isolated

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

Contextual Info: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

2SC5289

Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

Transistor S 40443

Contextual Info: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures

34993

Abstract: 7746-1 transistor ON Semiconductor marking J50 7746-1 NSF2250WT1 NSF2250WT1G 33167 1011 sot323 67723
Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift

Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

ic sc 4145

Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Contextual Info: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range