MAGNETORESISTANCE ELEMENT Search Results

81116

Abstract: 81-116
Contextual Info: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline

magnetic sensor

Abstract: Magnetic Field Sensor DM-231
Contextual Info: DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is

Magnetic Field Sensor

Abstract: max 232 DM-232
Contextual Info: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is

Magnetoresistance and sensor

Abstract: DM-230
Contextual Info: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

PUT marking

Abstract: DM-230
Contextual Info: DM-230 S O N Y . Magnetoresistance Element Description Package Outline U n it: m m DM-230 a m agnetic sensor using magnetoresistance e ffect is composed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is suitable fo r angle o f rotation detection and number

Contextual Info: S O NY CORP/COMPONENT PRODS MTE 0302303 D GGG31b4 1 DM-232 SONY. -r- 4,-s"-ö>s" Magnetoresistance Element Description Unit: mm Package Outline D M -232 a m agnetic sensor using magnetoresistance effect is com posed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is

DM 321

Abstract: DM106B 106B SONY DM-106B DM-106B E6014 1rb2 Thin-film magnetic resistance
Contextual Info: DM-106B Magnetoresistance Element For the availability of this product, please contact the sales office. Description The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for automatic shut off of tape

41e magnetic sensor

Abstract: magnetic field magnetoresistance element magnetic resistance element
Contextual Info: SOI^ Y C O R P / C O M P O N E N T PRODS 4TE 0302303 D 0 0 0 3 1 bfl *î DM-233 ~r-&s~-os~ SONY Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

nve magnetoresistance

Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available

C946

Abstract: DM 0565 2SC1636 2SK43 2SC1636 equivalent C1475 1S1555 DM211 magnetic resistance element lm393 rotational speed
Contextual Info: DM-211 SO N Y. Magnetoresistance Element Description The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,

DM 321

Contextual Info: DM-231 SONY. Magnetoresistance Element Description Unit: mm Package Outline DM-231 a magnetic sensor using magneto resist­ ance effect is composed of ferrom agnetic material deposited by evaporation on a silicon substrate.lt is suitable fo r angle of rotation detection.

DM 0565

Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844
Contextual Info: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.

Tunneling Magnetoresistance

Abstract: AAT001-10E
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

A844

Abstract: c1636 c945 equivalent C1475 2SC1636 2SC1636-22 2Sc945 equivalent DM211 equivalent c945 lm393 rotational speed
Contextual Info: DM-211 SO NY. Magnetoresistance Element Description The D M -2 1 1 is a highly sensitive magneto resistance element, composed of an evaporated ferrom agnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,

DM 321

Abstract: magnetoresistance element
Contextual Info: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist­ ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

MA 7805 tesla

Abstract: TESLA MA 7805 relative permittivity of permalloy ring core permalloy bh curve Anisotropic magnetoresistance compass angle position sensors relative magnet permeability ring core permalloy curve 7805 n-p-n transistor right siemens wheel speed sensor PWM
Contextual Info: Magnetoresistance MR Transducers And How to Use Them as Sensors 1st. Edition, July 2004 Perry A. Holman, Ph.D. ii Copyright c 2004 Honeywell International Inc. All rights reserved. Acknowledgments The author would like to thank Dr. James R. (Bob) Biard for many, many late night

Planar Coil

Abstract: KMR360 HL-Planartechnik Magnetic Field Sensor kmr h 9740 Anisotropic magnetoresistance KMR36 transistor 9740
Contextual Info: Magnetic Field Sensor KMR 360 preliminary General Description The KMR 360 is a new patented development by HL Planartechnik GmbH. This magnetic field sensor utilizing the anisotropic magnetoresistance effect. The sensor contains three Wheatstone bridges rotated by 120°. A rotating magnetic field (strength > 25 kA/m in the sensor plane) will result in three

Contextual Info: SONY DM-106B Magnetoresistance Element Description T he D M -1 06 B is a h ig h ly s e n s itiv e m ag n e to resistance e le m ent com posed of an evaporated fe rro m a gn etic alloy on a silicon substrate. The element can be used for automatic shut off of tape

Contextual Info: DM-232 Sony. Magnetoresistance Element Description Package Outline U n it : m m D M -2 32 a m a g n e tic sensor using m a gnetoresistance e ffe c t is com posed o f fe rro m a g n e tic m a terial deposited by e v a p o ra tio n on a silicon s u b s tra te .lt is

magnetic resistance element

Abstract: DC12V
Contextual Info: MR Sensors TDM Series Magneto-Resistance Device High-Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together FEATURES ¡ Compact and light weight. ¡ Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element

Magnetoresistance and sensor speed

Contextual Info: MR Sensors TDM series Magneto-Resistance Device High Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together CONSTRUCTION OF MAGNETIC ENCORDER FEATURES Magnetic Recording Medium 1. Compact and light weight. 2. Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element

Contextual Info: b3E D • Honeywell 4 S 5 1 Û 7 2 G Q D 1 1 G 1 151 « H O N B MAGNETIC FIELD SENSORS honeyüiell / s s e c DESCRIPTION SSEC permalloy magnetic field sensors provide an unmatched ability to trade off size, power consumption, and sensitivity. They are fabricated by depositing a thin film of nickel-iron onto a silicon substrate which can have a simple

SLP-290B-51

Abstract: 00145B SKS100 msg06 SHS361
Contextual Info: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1