MAME Search Results

S2559F

Contextual Info: MAME Ordering Information AMERICAN MICROSYSTEMS, INC. August 1996 S tandard P roducts Any product in the MOS Products Catalog can be ordered using the simple system described below. With this system it is possible to completely specify any standard device in this catalog in a manner that is compatible with

Contextual Info: mame ME701203 ME701603 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ThtGB-PhSSG Diode Bridge Modules 30 Amperes/1200-1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applica­

Contextual Info: Sockets N u g en t — DESIGN SPECIFICATIONS FOR CUSTOM PIN GRID ARRAY SOCKETS & HEADERS COMPANY NAME co ADDRESS_ KET =>HONE NUMBER FAX NUMBER MAME_ ooooooooooooooooooooo ooooooooooooooooooooo INDICATE DESIRED PIN AND PLATING LEAD STYLE SOCKETS:

Analog

Abstract: ain0 AMX299K01 analog mux
Contextual Info: AMX299K01 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 1.5 micron CMOS ABF Double Poly Analog mux1 AVDD SUB Description Analog Mux with break-before make circuitry. AIN0 AOUT AIN1 Sel AVSS PIN DESCRIPTION MAME TYPE AIN0 AIN1 SEL AOUT SUB AVDD AVSS

Contextual Info: a PAPTS MAME •5 X / \ wafeb tv PIN > I II» SHELL U » MATERIAL iòti NVL0N46 GJF. ÌK NOTES G .F .3 0 * , U L 9 4 Y - 0 , £ : » GJ.M V.U LÎ4V -0, COLOB .BLACK : S j '- î- ^ O . 7 6 * m M I N . CONTACT APEA I COLO O.Tfi «mUIN. * » tO . 25 I N. BRASS t o .«

F5019

Contextual Info: SPECIFICATION Device Mame in any way w h a tso e ver for the usa of a n y Igni, or disclosed third p a n y n o r used for iha m anufacturing purposes w ith o u t the express written con sen t of Fuji Electric Co. Ltd. Type Name Spec. No. Intelligent Power MOSFET

1S55

Abstract: SC-65 HT 25-19
Contextual Info: JL S P E C 1 F 1 C A T 1 ON DEVICE MAME 1G B T TYPE NAME : SPEC. No. : 1M B 0 5 — 1 2 0 M S 5 F 3 5 2 7 M Œ _ ;_ Jun. -25-19% F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without not ice. I DATE NAME APPROVED Fuji Electric Co4id.

1ss nec

Contextual Info: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :

br1941

Abstract: com8116 TTL 7400 oscilator WD1943 COM5016 d1943 COM5036 Q-MATIC OM5036 stt 128
Contextual Info: WESTERN DiC/TAL C O R P O R A T I O N W D 19 43 81 36 Dual B aud R ate C lo ck X TAL/EXT 1 d CH ^ fR nz cm Rc l = 4 5 6 rd C Z 7 12 STR NC C Z 8 9 11 10 r b c z • ROM MASKABLE FOR NON-STANDARD FREQUENCE SELECTIONS • OUTPUTS A 50% DUTY CYCLE CLOCK WITH 0.01 %

54C906

Abstract: 54C906 similar ELITE EY MM54C906F
Contextual Info: This Material Copyrighted By Its Respective Manufacturer r SCOPE 1.1 Scooe. .This drawing describes the requirements for monolithic s ilic o n , d ig it a l, CJIOS buffers This drawing provides for a level of m icro c irc u it q u ality and r e l i a b i lit y assurance for procurement

bwh molded wirewound resistor

Abstract: bwh series bwh series resistor 22RC20
Contextual Info: 0 / SP20F Series GeneralFailsafe Purpose Failsafe eral Purpose Molded Wirewound ed Wirewound Resistor Resistor SPH/SPF Series 'ENERAL0URPOSE&AILSAFE Fusible 10% tolerance • SPF is fusible -OLDED7IREWOUND2ESISTOR m to 1200 ohms · ±5%, ±10% tolerance

Contextual Info: Intel. InteI/40 Graphics Accelerator Datasheet Release Date: April, 1998 Order Number: 2^06 :8-00:^ Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

cts 10mhz oscillator

Abstract: 2616 memory rom P114-1 variable frequency drive circuit diagram M30220 144P6Q-A LCDRAM16 DSA003632
Contextual Info: t U de nd ve er lo pm en Preliminary Specifications REV.E Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M30220 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M30220 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

Contextual Info: ADC-530 L PRODUCT DATA 12-Bit, Ultra-fast, Low-Power A/D Converter FEATURES 12-Bit resolution 350 N a n o se c o n d s m axim um co n ve rsio n time Low-power, 2.1 W Sm all initial errors Three-state output buffers -55 to +125 °C operation Sm all 32-pin DIP

Contextual Info: HD64180S -NPU Network Processing Unit • DESCRIPTION The HD64180S, network processing unit (N PU ), provides multipurpose high-speed com m unication control functions on a single LSI chip. The HD64180S offers high perform ance com m unication protocol process­

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

i960RP

Contextual Info: i960 1.0 ABOUT THIS DOCUMENT 1.2 This data sheet contains advance inform ation about Intel’s i960 RP I/O processor at 5 Volts referred to as 80960R P 33/5.0 , including a fu n ctio n a l overview, m echanical data (package signal locations and simulated therm al characteristics), targeted electrical

FM1208S

Abstract: Ferroelectric RAM mtron "Ferroelectric RAM" ramtron FRAM
Contextual Info: F M 1 2 0 8 S F R A M M e m o ry r^ p M T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

RAS 0510 SUN HOLD

Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.

OFW 361

Abstract: bmg 2 1GG7
Contextual Info: • 1007E47 Enhanced Memory Systems Inc. OOOOGbb 361 ■ DM2223/2233Multibank BurstEDOEDRAM 512Kb x 8 Enhanced Dynamic RAM Preliminary Datasheet Features ■ 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page

fujikura fire resistance power cable

Abstract: JIS-C-0911 JW13PG 8 PIN RELAY 24V dc pla JIS C 0911 jw-13pg ZW31LM ZW-322MH Z-SM10 ZW82N
Contextual Info: Version 1.0 Produced in Dec. 1997 Shaip Programmable Controller Model name I/O link master module User's Manual JW-23LMH We thank you for your purchase of the I/O link master module, JW-23LMH for the programmable controller new satellite JW20H/30H. This manual describes about specifications, usage etc. of the I/O link master module and slave module.

Contextual Info: S O NY CORP/COMPONENT S o n y . PRODS 50E I> • Û3Û2363 0003flSb ft « S O N Y _ CXB1111Q/Q-Y / - ¿ / S -' o 7 4-bit Lo ok-A head C a rry G enerator Description Pin Assignment The C X B 1 U 1 Q is a n ultra high speed m onolithic E C L 4-bit Look-Ahead C a rry Generator.

Contextual Info: SONY CORP/COMPONENT PRODS SOE D • A3Ö53Ö3 0004023 T MSONY CXB1560Q-Y SO NY Dual Comparator 7 ^ V5~- 7 Preliminary D escription 32 pin QFP (Ceramic The CXB1560Q-Y is an ultra high-speed comparator which features a clocking/pass-through mode switchover

Contextual Info: SONY C OR P/ COM PO NE NT s o n y PRODS SQE D • 6362363 00036^ 4 ■SONY CXB1133Q/Q-Y . T -< T 2 -3 3 -1 7 2 2 , 15, 7 S ta g e D a ta Scram bler w ith D ifferen tial I/O Description The CXB1133Q is an ultra high speed monolithic ECL Data Scrambler with variable bit length.