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    MAR 527 TRANSISTOR Search Results

    MAR 527 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MAR 527 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		RD07MVS1B 175MHz 520MHz RD07MVS1B-101, MAR 527 transistor RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor PDF

    2SC5379

    Contextual Info: Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 0.2+0.1 –0.05 • Features ● 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		2SC5379 2SC5379 PDF

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0 PDF

    K9F6408U0C-Q

    Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-Q PDF

    K9F6408Q0C

    Abstract: K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0 PDF

    Contextual Info: FLASH MEMORY K9F6408U0C Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-B PDF

    69-206

    Abstract: TSOP 44-40 Package 69-206 data sheet K9F6408U0C 8M cmos camera K9F6408U0C-QCB0 K9F6408Q0C-B K9F6408U0C-B
    Contextual Info: FLASH MEMORY K9F6408U0C Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-B 69-206 TSOP 44-40 Package 69-206 data sheet 8M cmos camera K9F6408U0C-QCB0 K9F6408Q0C-B K9F6408U0C-B PDF

    K9F2808Q0C-HCB0

    Abstract: K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0
    Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0 PDF

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0 PDF

    flash 8m*16bit

    Abstract: K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0
    Contextual Info: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm


    Original     		K9F2808U0C K9F2816U0C 48-Ball, 63-Ball, K9F28XXQ0C Pb-fre2816U0C flash 8m*16bit K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 PDF

    K9F2808U0C-YCB0

    Abstract: K9F2816X0C K9F2808U0C K9F2808Q0C-DCB0 K9F2808Q0C-HCB0 K9F2808U0C-DCB0 K9F2808U0C-FCB0 K9F2808U0C-VCB0 K9F2816Q0C-DCB0 K9F2816U0C-DCB0
    Contextual Info: K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History


    Original     		K9F2808Q0C-DCB0 K9F2808U0C-YCB0 K9F2808U0C-DCB0 K9F2808U0C-VCB0 K9F2816Q0C-DCB0 K9F2816U0C-YCB0 K9F2816U0C-DCB0 48-Ball, 63-Ball, K9F2816X0C K9F2808U0C K9F2808Q0C-HCB0 K9F2808U0C-FCB0 PDF

    Contextual Info: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm


    Original     		K9F2808U0C K9F2816U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 PDF

    K9F1208

    Abstract: nand flash 512M program for random number generator K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1208U0A-HCB0 K9F1208U0A-PCB0 K9F1216Q0A-HCB0
    Contextual Info: K9F1216U0A K9F1208U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. Apr. 25th 2002 0.1 TBGA K9F12XXX0A-DCB0/DIB0 size information is changed.


    Original     		K9F1216U0A K9F1208U0A K9F12XXX0A-DCB0/DIB0) K9F1208 nand flash 512M program for random number generator K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1208U0A-HCB0 K9F1208U0A-PCB0 K9F1216Q0A-HCB0 PDF

    Contextual Info: FLASH MEMORY K9F5608U0B Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May. 15th 2001 0.1 At Read2 operation in X16 device : A3 ~ A7 are Don’t care => A3 ~ A7 are "L" Sep. 20th 2001


    Original     		K9F5608U0B PDF

    Contextual Info: FLASH MEMORY K9F5608U0B Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May. 15th 2001 0.1 At Read2 operation in X16 device : A3 ~ A7 are Don’t care => A3 ~ A7 are "L" Sep. 20th 2001


    Original     		K9F5608U0B PDF

    KM29U128AT

    Abstract: SAMSUNG NAND Flash Qualification Report K9F2808U0A
    Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes


    Original     		K9F2808U0A-YCB0, K9F2808U0A-YIB0 KM29U128AT K9F2808U0A-YCB0 KM29U128AIT 48-PIN 1220F SAMSUNG NAND Flash Qualification Report K9F2808U0A PDF

    digital VOICE RECORDER data sheet

    Abstract: K9D1208V0A-SSB0 SSFDC SmartMedia Logical Format
    Contextual Info: SmartMediaTM K9D1208V0A-SSB0 Document Title 64M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Nov. 20th 2000 preliminary 0.1 1. Renamed the 17th pin from Vcc to LVD Low Voltage Detect Mar. 2th 2001 Final


    Original     		K9D1208V0A-SSB0 digital VOICE RECORDER data sheet K9D1208V0A-SSB0 SSFDC SmartMedia Logical Format PDF

    K9D1208V0M-SSB0

    Abstract: SmartMedia Logical Format
    Contextual Info: SmartMediaTM K9D1208V0M-SSB0 Document Title 64M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue April 10th 1999 Advanced Information 0.1 1. Revised real-time map-out algorithm refer to technical notes July 23th 1999


    Original     		K9D1208V0M-SSB0 SMFDV064 K9D1208V0M-SSB0 SmartMedia Logical Format PDF

    K9K1208D0C

    Abstract: K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C
    Contextual Info: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


    Original     		K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C PDF

    Contextual Info: K9F5608U0A-YCB0,K9F5608U0A-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. July 17th 2000 Advanced Information 0.1 1. Support copy-back program - The copy-back program is configured to quickly and efficiently rewrite


    Original     		K9F5608U0A-YCB0 K9F5608U0A-YIB0 48-PIN 1220F PDF

    date code marking samsung Nand

    Abstract: K9F2808U0A K9F2808U0A-YIB0 K9F2808U0A-YCB0 KM29U128AIT KM29U128AT samsung flash marking
    Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes


    Original     		K9F2808U0A-YCB0, K9F2808U0A-YIB0 KM29U128AT K9F2808U0A-YCB0 KM29U128AIT 48-PIN 1220F date code marking samsung Nand K9F2808U0A K9F2808U0A-YIB0 K9F2808U0A-YCB0 samsung flash marking PDF

    63 ball fbga

    Abstract: K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D
    Contextual Info: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


    Original     		K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry 63 ball fbga K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D PDF

    date code body marking samsung

    Abstract: K9S5608V0M K9S5608V0M-SSB0 SMFV032 date code marking samsung Nand
    Contextual Info: SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1. Changed tR Parameter : 7µs Max. → 10µs(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)


    Original     		K9S5608V0M-SSB0 SMFV032 15dia date code body marking samsung K9S5608V0M K9S5608V0M-SSB0 date code marking samsung Nand PDF

    K9F5608U0M-YCB0

    Abstract: date code marking samsung Nand K9F5608U0M K9F5608U0M-YIB0 264Mbit
    Contextual Info: K9F5608U0M-YCB0,K9F5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April. 10th 1999 0.1 Revised real-time map-out algorithm refer to technical notes July. 23th 1999


    Original     		K9F5608U0M-YCB0 K9F5608U0M-YIB0 KM29U256T K9F5608U0M-YCB0 KM29U256IT 48-PIN 1220F date code marking samsung Nand K9F5608U0M K9F5608U0M-YIB0 264Mbit PDF