MARK 34 DBM SOT Search Results

Contextual Info: O K I Semiconductor MSM6888B Multi-Function Telecommunication LSI GENERAL DESCRIPTION The MSM6888B provides three kinds of functions which are often applied for telephone terminal equipment. Those are DTMF generator, DTMF receiver and low speed 300 bps FSK modem defined as V.21

tms9995

Abstract: xmtd
Contextual Info: TEXAS INSTRUMENTS INC 0?E D | flTL>17E4 O 0 7 7 0 7 5 1. 1.1 S | T-75-; INTRODUCTION DESCRIPTION The TMS99532A and TMS99534A modems are telecommunications devices that transmit and receive serial, binary data over the switched telephone network using frequency-shift-keyed FSK modulation. The TMS99532A is compatible

Contextual Info: O K I Semiconductor MSM7515/7516 Multi-Function Telecommunication LSI G E N E R A L DESCRIPTION The MSM7515/7516 provides three kinds of functions which are often applied for telephone terminal equipment. Those are DTMF generator, DTMF receiver and low speed 1200 bps FSK modem defined as V.

nec 2501

Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

DB14N

Abstract: 68652 scn68652 pin diagram of db06 mpcc xe36 SCN2652A
Contextual Info: Philips Semiconductors Product specification Multi-protocol communications controller MPCC DESCRIPTION FEATURES The SCN2652/68652 Multi-Protocol Communications Controller (MPCC) is a monolithic n-channel MOS LSI circuit that formats, transmits and receives synchronous serial data while supporting

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RENESAS marking code package sot 89

Abstract: HS350 POWER MINIMOLD marking code renesas
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

K1305

Abstract: heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203
Contextual Info: INTRODUCTION PRODUCT OVERVIEW PRODUCT/ PACKAGE CORRESPONDENCE ELECTRICAL CHARACTERISTICS PACKAGE DIMENSIONS PACKING SPECIFICATIONS HANDLING PRECAUTIONS REFLOW CONDITIONS 1 PRODUCT OVERVIEW 1 ¡ electronic components PRODUCT OVERVIEW E2Q0003-16-60 PRODUCT OVERVIEW

NE5500234

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500434

Abstract: HS350 NE5500434-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500234

Abstract: fet sot-89 product marking DCS1800 HS350 PCS1900 RENESAS marking code package sot 89 NE5500234-T1-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

74vhc942

Abstract: universal telemetry modem power line carrier communication dc 74VHC MM74HC942 D-S2256 WV5 64
Contextual Info: j^ e ^ 74VHC942 300 Baud Modem General Description Features The 74VHC942 is a full duplex tow speed modem. It pro­ vides a 300 baud bidirectional serial interface for data com­ munication over telephone lines and other narrow band­ width channels. It is Bell 103 compatible.

HMC1055

Contextual Info: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA

Contextual Info: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA

Contextual Info: NJM2275 VHF/UHF BAND RF AMPLIFIER GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2275 is a low current, low voltage RF amplifier, especially designed for VHF/UHF band. The center frequency of this narrow band amplifier is changed by external components. NJM2275F1

gsm module datasheet

Abstract: 7M5003 amplifier gsm signal GSM module BLOCK diagram GSM module circuit diagram gsm signal amplifier QUALCOMM Reference design SOIC-14 SOIC-16 TQM7M5003
Contextual Info: 11 TQM7M5003 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features x x x x x x x x x x GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm’s Multi-mode Chip Sets - 38dB Typical ACPR 200KHz - 66dB Typical ACPR (400 KHz)

7m5003

Abstract: TQM7M5003 SOIC-14 SOIC-16 TSSOP-20 TSSOP-28 GSM module circuit diagram
Contextual Info: 11 TQM7M5003 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • • • • • • • • • GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm’s Multi-mode Chip Sets - 38dB Typical ACPR 200KHz

NJM2275

Abstract: NJM2275F1
Contextual Info: NJM2275 VHF/UHF BAND RF AMPLIFIER GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2275 is a low current, low voltage RF amplifier, especially designed for VHF/UHF band. The center frequency of this narrow band amplifier is changed by external components. NJM2275F1

HMC315

Contextual Info: HMC315 MICROWAVE CORPORATION HBT DARLINGTON AMPLIFIER DC - 7.0 GHz V00.1100 FEBRUARY 2001 General Description Saturated Output Power: + 17 dBm The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive

LPH7319

Abstract: lph7319-3 circuit diagram for micro controller based caller LPH7319-3 Display module BT 139 F applications note dmo 465 ,LPH7319 AN98071 transistor BT 139 F applications note caller id converter dtmf to fsk
Contextual Info: APPLICATION NOTE Application of the PCD3316 Caller Identification IC AN98071 Philips Semiconductors Application of the PCD3316 Caller Identification IC Application Note AN98071 Abstract This report describes the CMOS integrated circuit PCD3316 and offers the required application information for

9398 393 40011 or I2C Peripherals Data Handbook IC12

Abstract: PCD3316 PCD3316T FSK receiver philips
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCD3316 CIDCW receiver Product specification Supersedes data of 1997 Dec 11 File under Integrated Circuits, IC03 1998 May 14 Philips Semiconductors Product specification CIDCW receiver PCD3316 CONTENTS 1 FEATURES 2 APPLICATIONS

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance