MARK 5236 Search Results

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

asus motherboard

Abstract: ATI Radeon 9800 pro D865GBF d865gb PC MOTHERBOARD msi SERVICE MANUAL ST3120026A intel D865gbf nFORCE3 intel motherboard display problem repairing intel chipset 986 motherboard repair
Contextual Info: AMD Processor Performance Evaluation Guide Mark W. Welker ADVANCED MICRO DEVICES One AMD Place Sunnyvale, CA 94088 Publication # Issue Date: 30579 Revision: December 2003 3.25 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: j. 1. scope This specification provide the ratings and the requirements for high voltage silicon diode ESJA82-10A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Zener diode 81A

Abstract: 5252B 5246B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B 5250B DIODE 8L sot 23
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES L B L • Small Package : SOT-23. -_L : o MAXIMUM RATING Ta=25°C SYMBOL RATING

5252B

Abstract: Zener diode 81A
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*

SPD014A

Contextual Info: SAW Duplexer 836.5/881.5MHz China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: SPD014A www.sipatsaw.com A. MAXIMUM RATING: RoHS Compliant Lead free Lead-free soldering 1.Input Power Level: 1.2W>50000 Hours, CW tone Ta=50°C

5231B diode

Abstract: 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B MMBZ5226B MMBZ5257B 5235b
Contextual Info: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature

Contextual Info: Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C Value Units

Contextual Info: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N at ion al Semiconductor MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* ta Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation

MMBZ 52368

Abstract: 5251B 8A SF sc 10 MARK 8E diode DIODE BZ mark 8m sot-23 ml25 5234B 5235B MMBZ5226B
Contextual Info: . , Discrete POWER & Signal Technologies Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation

MARK 8E diode

Abstract: 5248B 5231B diode mark 8m sot-23 5228B 5233B 5234B MMBZ5226B MMBZ5257B 5226B
Contextual Info: Series - MMBZ5257B MMBZ5226B tß D iscrete POWER & S ign al Technologies National Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners T o le ra n c e : B = 5 % Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Value Storage Temperature Range

Contextual Info: MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C 3 Value Units -55 to +150

Zener diode 81A

Abstract: zener IN 5232B zener diode voltage list ZENER DIODE 5.1V 1 MARK 8E diode ZENER DIODE 5.1V 5228B 5233B MMBZ5226B MMBZ5257B
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature TA = 25°C unless otherwise noted 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.

Zener 5.1V

Abstract: MMBZ5221B Fairchild zener diode 5251b 8f zener MARK 8E diode 5228B MMBZ5257B 5221B
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.

ma2820

Abstract: 5251B ZENER MARK 22 MMSZ5200 mark B2 MMSZ5257B RoHS Zener 5.1V 5228B 5233B MMSZ5226B
Contextual Info: Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation @ 25°C 500 mW RθJA Thermal Resistance, Junction to Ambient * 340 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature

5223B

Abstract: 5232B 81E zener diode MMBZ5221B
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.

sot23 mark code e2

Abstract: 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature 3 Value Units -55 to +150 °C + 150 °C mW mW/°C Total Device Dissipation Derate above 25°C 350 2.8 2

Zener diode 81A

Abstract: zener diode cross reference 3.9 zener 8v diode 5236B Zener diode 81e 8A SOT23-3 zener diode cross reference zener discrete MMBZ5221B
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.

5251B

Abstract: 8C SOT-23 5233B mark 8m sot-23 Zener 5.1V 5228B MMBZ5226B MMBZ5257B SOT-23 Zener Diode Zener diode 81A
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value 3 Units TSTG Storage Temperature Range -55 to +150 °C TJ Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C + 150 °C 350

cal 3200

Abstract: 2RI150E schematic welding inverters
Contextual Info: 2 R I 1 5 0 E 2 x i 50A l * f f ö 't '/ i : Outline Drawings PO W ER DIO DE M O DULE 20.0 2C,0 ,20.0 20*0 >*1.5 : Features • X&M. Large Capacitance • JftlUK Insulated Type • Easy Connection • 77 *- M ft (ll» x a g o n B olt and W asfter A s se m b lie s)

ESJA52-14A

Abstract: sis 962
Contextual Info: Soec. DATE NAME CHECKED DWG.N0. Thl» m alefici and the Inlorm tllon Itartln I» 1h* p rop o rti o{ Fuji decirle C o .,1.14. They *h«N b« neither rftp'oducnd, copied, U n i, or d le d o ie d In any wiy w hutioever fur Ihe vit» al *r>y third purtjf nor m<d lor il9 ffl#niií«elurlng purpoio

HIGH VOLTAGE DIODE 12kv

Abstract: ESJA52-12A
Contextual Info: SPECIFICATION Device Name_ : High Voltage Si Iicon Diods T vpg Name_; E S J A 5 2 ^ 1 2 A _ No._ :_;_ tlil« m nUrial arid the tnformiiUon har«ln |k ih* pro|>firty of Fuji Eltctilc C o.,ltd. Th*y *hid1 b* r«l|h«r reptcKlucsd, çoplitd.