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    MARK A DIODES Search Results

    MARK A DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    MARK A DIODES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BIR-HL033A

    Contextual Info: | S U R F A C E MOUNT IN F R A R E D EM ITTIN G DIODES 1206 B IR -H x\33A Scries C a th o d e Mark 3.2 .126 ± 0.2 LED die -A n o d e M a rk F o r -B lR -H N x 33A R0.4(.015) R0.2(.008) MAX. R0.1(.004) 1.4(.055)±0.2 0.5(.020) C a th o d e Mark 0.75(.029)L


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    Ta-25t, BIR-Hxx33A BIR-HNX33A BIR-HL033A IR-IIMI33A BIR-IIN033A B1R-H0033A BIR-IIOI33A PDF

    FRMB1211C-TR

    Abstract: 251C
    Contextual Info: 3 # # [ E * SYM. S-No. : 025071 2006. _ K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- G1. 18 A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3 :7 / - F


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    FRMB1211C-TR 251C PDF

    FYMG1211C-TR

    Abstract: ltt2 251C
    Contextual Info: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F


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    FYMG1211C-TR ltt2 251C PDF

    FAMB1211C-TR

    Abstract: diode ED 68 251C 0118mm
    Contextual Info: 3 # # [ E* SYM. S-No. : 025071 2 0 0 6 . _ G1. K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- 18 A I - 7 Dimensions t 'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F


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    FAMB1211C-TR diode ED 68 251C 0118mm PDF

    FYMB1211C-TR

    Abstract: 251C
    Contextual Info: 3 # # [ E * SYM. S-N o. : 025071 K Í tt ZONE I I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3:7 / - F


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    FYMB1211C-TR 251C PDF

    FAMG1211C-TR

    Abstract: sfeb FAMG1211C 251C WM Mark code
    Contextual Info: 3 # # [ E * E « SYM. ZONE S-No. : 025071 Í I ♦ R E V IS IO N S REV. NO. _ G1. 18 A B ft in * * * NTF. NO. DATE REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad 1. 3: 7 / - F


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    FAMG1211C-TR sfeb FAMG1211C 251C WM Mark code PDF

    LL101

    Abstract: LL101A LL101B LL101C SD101A
    Contextual Info: Certificate TH97/10561QM LL101A - LL101C Certificate TW00/17276EM SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction


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    TH97/10561QM LL101A LL101C TW00/17276EM OD-80C) LL101 DO-35 SD101A, LL101B LL101B LL101C SD101A PDF

    SCS422S

    Abstract: Plastic-Encapsulate Diodes marking Zzz marking 6
    Contextual Info: SCS422S High Speed Switching Diodes Elektronische Bauelemente Plastic-Encapsulate Diodes RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-523 CATHODE MARK . . FEATURES 1.6±0.1 High Reliabilty With High Surge Current Handing Capability


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    SCS422S OD-523 150mA 01-Jun-2002 SCS422S Plastic-Encapsulate Diodes marking Zzz marking 6 PDF

    1N4148WT

    Abstract: DIODES Inc diodes marking phone WIFI 1N4448HWT backward diode schottky diode DIODES diodes code marking diode marking code PB MARKING 30 ROHM ROHM marking
    Contextual Info: New Product Announcement September 2003 Six High Speed Schottky and Switching Diodes in Ultra-Small SOD-523 package Schottky Diodes: SDM03U40, SDM10U45, SDM20U30, SDM20U40 Switching Diodes: 1N4148WT, 1N4448HWT CATHODE MARK SOD-523 A B C D E G B A Dim MARKING CODE


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    OD-523 SDM03U40, SDM10U45, SDM20U30, SDM20U40 1N4148WT, 1N4448HWT OD-523 SC-79 1N4148WT DIODES Inc diodes marking phone WIFI 1N4448HWT backward diode schottky diode DIODES diodes code marking diode marking code PB MARKING 30 ROHM ROHM marking PDF

    BAS70WS

    Abstract: Plastic-Encapsulate Diodes Schottky diode low voltage marking k73
    Contextual Info: BAS70WS Schottky Diodes Plastic-Encapsulate Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-323 FEATURES CATHODE MARK 2.5±0.2 * Low Turn-on Voltage * Designed For Surface Mount Application 1.7±0.1


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    BAS70WS OD-323 01-Jun-2002 BAS70WS Plastic-Encapsulate Diodes Schottky diode low voltage marking k73 PDF

    Contextual Info: A Product Line of Diodes Incorporated AP4312 CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER Description Pin Assignments The AP4312 is a highly integrated solution for a constant voltage/constant current mode SMPS application. Top View Pin 1 Mark The AP4312 contains one 1.21V voltage reference, one low voltage


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    AP4312 AP4312 DS36797 PDF

    1SS400

    Contextual Info: 1SS400 Diodes Switching diode 1SS400 !External dimensions Units : mm !Applications High speed switching 1.6±0.1 !Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability. 1.2±0.05 CATHODE MARK A 0.12±0.05


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    1SS400 1/10IR 1SS400 PDF

    Contextual Info: Diodes High-Speed Switching Diode 1SS400 under develoment tentative specifications •A p p lic a tio n s ►External dim ensions (Units: mm) High speed switching CATHODE MARK •F e a tu re s 1)Designed for moanting on extremely small surface areas (EMD2)


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    1SS400 PDF

    Contextual Info: Diode, switching, surface mount 1SS355 These diodes are suitable for high density surface mounting on printed circuit boards. They have a high switching speed. The reverse recovery time (trr is typically 2 ns.) Dimensions (Units : mm) CATHODE MARK Features


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    1SS355 OD-323) 1SS355 PDF

    A916CY-4R7M

    Abstract: JMK325BJ226MM design ideas JMK212BJ106MG LTC3441 MBRM120LT3 single inductor converter
    Contextual Info: DESIGN IDEAS Monolithic Buck-Boost Converter Provides 1A at 3.3V by Mark Jordan without Schottky Diodes Introduction Inside the LTC3441 The LTC3441 patented control technique provides smooth and continuous transfer from buck, buck-boost and boost modes while maintaining a


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    LTC3441 LTC3441 600mA JMK212BJ106MG JMK325BJ226MM MBRM120LT3 A916CY-4R7M A916CY-4R7M JMK325BJ226MM design ideas JMK212BJ106MG MBRM120LT3 single inductor converter PDF

    Contextual Info: LL41 Schottky Diodes FEATURES MiniMELF ♦ ♦ This diode features low turn-on voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. C athode Mark .142 3 .6


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    DO-35 BAT41. PDF

    BAT48 SCHOTTKY

    Abstract: BAT48 LL48 pd330
    Contextual Info: LL48 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,


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    OD-80C) DO-35 BAT48. 100mA 500mA BAT48 SCHOTTKY BAT48 LL48 pd330 PDF

    LL101

    Abstract: LL101A LL101B LL101C SD101A
    Contextual Info: LL101A - LL101C SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching


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    LL101A LL101C OD-80C) LL101 DO-35 SD101A, LL101B LL101B LL101C SD101A PDF

    LL101A

    Contextual Info: LLIOIA . LL101C Silicon Schottky B arrier Diodes for general purpose applications. C athode Mark II The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for


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    LL101C LL101 DO-35 SD101A, LL101B LL101C LL101 LL101A PDF

    SCHOTTKY DIODE SOD-80

    Abstract: LL101 LL101A LL101B LL101C SD101A SD101AW SD101BW SD101CW SOD123 4001
    Contextual Info: LL101A THRU LL101C Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon .142 3.6 .134 (3.4) ∅ .063 (1.6) .055 (1.4) Cathode Mark Schottky barrier device which is protected by a PN junction guard ring. The low forward


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    LL101A LL101C LL101 DO-35 SD101A, OD-123 SD101AW, SD101BW, SD101CW. LL101A SCHOTTKY DIODE SOD-80 LL101B LL101C SD101A SD101AW SD101BW SD101CW SOD123 4001 PDF

    VJ0805X

    Abstract: GRM31CR72A105KA01L MIC4102 MIC4102BM Si4484EY Capacitor 0.1uF 50V vishay bc
    Contextual Info: MIC4102 Evaluation Board MIC4102 Gate Driver Evaluation Board By Mark Ziegenfuss General Description This evaluation board provides a platform for evaluating the MIC4102 Power MOSFET driver. The MIC4102 is a high voltage synchronous gate driver controlled by a single


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    MIC4102 M9999-111407 VJ0805X GRM31CR72A105KA01L MIC4102BM Si4484EY Capacitor 0.1uF 50V vishay bc PDF

    Contextual Info: LL48 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,


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    OD-80C) DO-35 BAT48. 100mA 500mA PDF

    BAT42

    Abstract: BAT43 LL42 LL43
    Contextual Info: Certificate TH97/10561QM LL42 - LL43 Certificate TW00/17276EM SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN


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    TH97/10561QM TW00/17276EM OD-80C) DO-35 BAT42 BAT43 200mA BAT43 LL42 LL43 PDF

    Contextual Info: Diodes Schottky Barrier Diode RB751V-40 •Extemal dimensions Units: mm •A pplications High speed switching CATHODE MARK •F e a tu re s 1)Designecf for mounting on small surface areas (UMD2) 2)High reliability 1.25±0.1 •C onstruction Silicon epitaxial


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    RB751V-40 1000m PDF