MARK DIODE GENERAL SEMICONDUCTOR Search Results

DSM3MA4

Abstract: DSM3MA2 DSM3MA1 DSM3MA HITACHI
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 2.0 (0.08) 4.0 (0.16) DCB S A 4 Cathode band 0.2MAX (0.008) 2.5

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

DSM1MA2

Abstract: hitachi rectifier
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B Z B S A 4 Cathode band 2.0 (0.08) 4.3 (0.17)

DSM1MA2

Abstract: DSM1MA HITACHI Hitachi DSA0047
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)

ERB12

Contextual Info: ERB12 1 .OA i Outline Drawings GENERAL USE RECTIFIER DIODE I Features • Compact size, lig h tw e ig h t • A ftS H 't High reliability * y — K”^ —9 i Applications Cathode mark •n m w tft General purpose rectifier applications œ l i1 Abridged ty p e name

H14A

Abstract: H14B H14C H14D H14E H14F H14H H14J H14 HITACHI
Contextual Info: GENERAL-USE RECTIFIER DIODE H14 OUTLINE DRAWING H 29MIN. 1.14 H14A(100V) Brown H14B(200V) Red H14C(300V) Orange H14D(400V) Yellow H14E(500V) Green H14F(600V) Blue H14H(800V) Gray H14J(1000V) Purple φ 0.8 (0.03) Lot mark Color of cathode band Type 5MAX (0.2)

H14B

Abstract: H14J H14D H14C H14A H14E h14h H14F Hitachi DSA00514
Contextual Info: GENERAL-USE RECTIFIER DIODE H14 OUTLINE DRAWING H 29MIN. 1.14 H14A(100V) Brown H14B(200V) Red H14C(300V) Orange H14D(400V) Yellow H14E(500V) Green H14F(600V) Blue H14H(800V) Gray H14J(1000V) Purple φ 0.8 (0.03) Lot mark Color of cathode band Type 5MAX (0.2)

Switching diode 80V 200mA

Abstract: ROHM 1SS390 MARKING 68B9 47B diode
Contextual Info: EMD2 1208 size ROHM is a semiconductor manufacturer and has a series of the world's smallest packages! Surface Mounted package Extremely popular for portable products Double-terminal Diodes You can make your products lighter and smaller with it! Flat, thin, and

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

1N5770

Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

40N60KDA

Abstract: 40n60
Contextual Info: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description B A O S J C KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power

40N60KDA

Abstract: 40n60 Mark MJ
Contextual Info: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

SC9318FA

Abstract: SC9318FB LQFP-64-12 LQFP-64-12x12 SC9318-033
Contextual Info: Silan Semiconductors SC9318-033 DIGITAL TUNING SYSTEM DESCRIPTION The SC9318-033 is a single-chip digital tuning system optimum for portable sets such as headphone radio, etc… 5-band of FM/MW/LW/TV/SW are provided compatibly with worldwide destinations.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ・Simplify circuit design. 1 2 5 DIM A A1 Thin Extreme Super mini type with 5pin.

KTX401E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX401E EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

KTX401E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX401E EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

KTX301E

Abstract: MARK diode general semiconductor TRANSISTOR A1 TR
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

marking A1 TRANSISTOR

Abstract: KTX301U f1 transistor mark
Contextual Info: SEMICONDUCTOR KTX301U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Including two TR, Diode devices in USV. 1 5 A 2 C Simplify circuit design.

marking A1 TRANSISTOR

Abstract: KTX401E 5Q14
Contextual Info: SEMICONDUCTOR KTX401E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 DIM A A1 B A 2 C ・Simplify circuit design.

KTX301E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A ᴌSimplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

KTX301U

Abstract: diode d1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.

marking A1 TRANSISTOR

Abstract: KTX301E power diode f1 transistor mark TRANSISTOR A1 TR
Contextual Info: SEMICONDUCTOR KTX301E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.