MARK GM DIODE Search Results

Contextual Info: THYRISTOR MODULE P K pd,pe,kk 130F Power Thyristor/Diode Module P K 1 3 0 F series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. T w o elements in a package and

erc06

Abstract: A537 A536
Contextual Info: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">

rth08c

Contextual Info: THYRISTOR MODULE P K p d ,p e ,k k 9 0 H B U L ;E 7 6 1 0 2 (M ) Power Thyristor/Diode Module P K 9 0 H B series are designed for various rectifier circuits and powercontrols. For your circuit application, followinginternal connections and wide voltage rat­

6526

Abstract: 65eA w 6554 DL4148 DL4150 DL4151 DL4448 DL4454 SB655 gk 735
Contextual Info: DL969= DC COMPONENTS CO., LTD. Q SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p

Contextual Info: THYRISTOR MODULE PK PD 2 5 0 HB Power Thyristor/Diode Module PK250HB series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available.

PK110F160

Contextual Info: THYRISTOR MODULE PK pd,pe,kk HOF Power Thyristor/Diode Module P K 1 1 OF series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. High precision 25 mm (linch)

IC NE564

Abstract: NE564 fsk ne564 AN179 50MHz VCO schematic iE25
Contextual Info: INTEGRATED CIRCUITS AN179 Circuit description of the NE564 1991 Dec Philips Semiconductors Philips Semiconductors Application note Circuit description of the NE564 AN179 diode voltage. Good high frequency performance for Q2 and Q3 is achieved with current levels in the low mA range. Current-source

Contextual Info: A Product Line of Diodes Incorporated AZV358 DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS Description Pin Assignments DATA SHEET The AZV358 is dual low voltage 2.7V to 5.5V operational amplifiers which have rail-to-rail output swing capability. The input commonmode voltage range includes ground. The chip exhibits excellent

GM3Z

Contextual Info: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000

Contextual Info: THYRISTOR MODULE PK pd,pe,kk 40F Power Thyristor/Diode Module series are designed for PK 40F UL;E76102(M) various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. High precision 25 mm (linch)

Contextual Info: T H Y R IS T O R M O D U L E PK pd,pe 250GB UL; E76102 (M) Power Thyristor/Diode Module P K 2 5 0 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­

Contextual Info: THYRISTOR MODULE PK pd,pe 200HB UL;E76102(M) Power Thyristor/Diode Module PK200HB series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available.

Contextual Info: THYRISTOR MODULE PK pd,pe ,kk 25GB UL;E76102(M) Power Thyristor/Diode Module P K 2 5 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available, and electrically isolated mounting

diodo B6

Contextual Info: THYRISTOR MODULE PK pd,pe,kk 25HB ULIE76102(M) Power Thyristor/Diode Module P K 2 5 H B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available, and electrically isolated mounting

Contextual Info: THYRISTOR MODULE PK pd,pe,kk 90GB UL;E76102(M) Power Thyristor/Diode Module P K90G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available, and electrically isolated mounting

rkm 34 transistor

Abstract: RKM 24 sm transistor rkm 21 transistor diode t95 mark J5 SOT-89 CRB20 T95 Diode sot36 rkm 45 transistor TS11
Contextual Info: Packing Monolithic ICs P ackage SOP QFP 2 Taping package SOP8 - 28 pin) P ackaging type Tube A rranged in pla stic tu b e s (antistatic treated) Taping (8 - 28 pins only) SOP ICs adh e re d to a tape and w ound on a reel Pallet H oused in individual cells on stacked

CD01CF

Abstract: CD21CDW CD01CD CD20CDW CD20CDY CD21CDY CD21CD 90091-008
Contextual Info: DC Solid State Relay Series CD SHORT CIRCUIT PROTECTED, OPTICALLY ISOLATED, 2A, 60 VDC Part* Number DESC Drawing Number CD00CFW CD00CFY 90091-008 CD01CFW CD01CFY 90091-006 CD20CDW CD20CDY 90091-004 CD21CDW CD21CDY 90091-002 Relay Description DC Basic Solid State Relay SSR

UC39432B

Abstract: UC39432
Contextual Info: y UNITRO OE Precision Analog Controller UC19432 UC29432 UC39432 UC39432B FEATURES DESCRIPTION • Programmable Transconductance for Optimum Current Drive The UC39432 is an adjustable precision analog controller with 100mA sink capability if the ISET pin is grounded. A resistor between ISET and ground

IN5225

Abstract: 1N486B DO-35 PACKAGE liner marking code
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating

FJH1102

Abstract: 3310 h3 22 52
Contextual Info: FJH1102 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.

1S923

Abstract: IN5225 175 WIV High Switching
Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

FJH1100

Abstract: Tape and Reel Packaging Specifications MARK GM DIODE
Contextual Info: FJH1100 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.

Tape and Reel Packaging Specifications

Abstract: FJH1101 IN5225
Contextual Info: FJH1101 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.

IN5225

Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.