MARK PD SOT 23 Search Results

marking pd

Abstract: KRA104S
Contextual Info: SEMICONDUCTOR KRA104S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA104S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

1GM sot-23 transistor

Contextual Info: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

sot-23 single diode mark PD

Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

SC-75

Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit

BC557

Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

MMBF102

Abstract: fairchild amplifier Fairchild Semiconductor - Process Fairchild Semiconductor
Contextual Info: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted

zener 5A6

Abstract: 5a6 dual zener diode marking code 5a6 Sot 23-5
Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

zener 5A6

Abstract: 5a6 dual zener diode marking code 5A6 sot 26 marking 33a zener sot23 Dual Zeners in Common Anode marking b marking 33a zener marking code AC sot 23-5 marking 27A sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

LBZX84C3V3LT1G

Abstract: LBZX84C5V1LT1G LBZX84C15LT1G LBZX84C75LT1G lbzx84c5v6lt1g lbzx84c18lt1g LBZX84C3V0LT1G LBZX84C3V6LT1G LBZX84C12LT1G LBZX84C36LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes ƽ LBZX84XXXXLT1G We declare that the material of product compliance with RoHS requirements. SERIES 3 1 2 SOT– 23 TO–236AB PLASTIC MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds

marking E1 sot23-5

Abstract: G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33
Contextual Info: MC78PC00 Series Low Noise 150 mA Low Drop Out LDO Linear Voltage Regulator The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of

BC557

Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0

BC856

Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

LN2302LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2302LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ Features 3 1 2 High Density Cell Design For Ultra Low On-Resistance SOT– 23 (TO–236AB) Improved Shoot-Through FOM

sot 23 mark 6C

Abstract: marking code 6c
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 2 SOT-23 TO-236AB)

1d sot-23

Abstract: M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

marking 27A sot-23

Abstract: tvs SMA MARKING AE marking 6a8
Contextual Info: MMBZ5V6ALT1 Series Preferred Devices 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT–23 Dual Common Anode Zeners for ESD Protection Specification Features: • SOT–23 Package Allows Either Two Separate Unidirectional • • • • •

LBSS84LT1G

Abstract: LBSS84LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

marking 15d

Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT–23 Dual Common Cathode Zeners for ESD Protection 1 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

YW 431

Abstract: sot-23 MARKING CODE 431 MAX809 68HC11 MAX809J MAX809L MAX810 code marking MAX809R
Contextual Info: MAX809, MAX810 3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required.

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.