Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING "S3" SCHOTTKY BARRIER Search Results

    MARKING "S3" SCHOTTKY BARRIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MARKING "S3" SCHOTTKY BARRIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3 marking DIODE

    Abstract: 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original
    PDF 1SS367 OD-323 OD-323 S3 marking DIODE 1SS367

    Marking Code "s3" diode

    Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original
    PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode

    Marking Code "s3" diode

    Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original
    PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367

    3m sod

    Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original
    PDF 1SS367 OD-323 OD-323 3m sod marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode

    S3 Package

    Abstract: No abstract text available
    Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code


    Original
    PDF SDB110Q SDB110Q OD-523 KSD-E009-003 S3 Package

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃


    Original
    PDF OD-523 1SS388 OD-523

    S3 DIODE schottky

    Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
    Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1


    Original
    PDF SDB110Q OD-523 KSD-E009-001 200pF, S3 DIODE schottky S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode

    Untitled

    Abstract: No abstract text available
    Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1


    Original
    PDF SDB110Q OD-523 KSD-E009-002

    marking code p60 SMD

    Abstract: TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4
    Text: Schottky Barrier Diodes Two Terminals Part No. TSD013-730F3 Marking Code Max. Average Rectified Current lo(AV) (mA) Q Peak Repetitive Reverse Voltage SMD Schottky Max. Forward Voltage @ IF Max. Reverse Current @ VR R TSD013-730WU TSD013L-720WU TSD023-54WU


    Original
    PDF TSD013-730F3 BAS85 LL5711 LL6263 LL103C LL103B LL103A LL101C LL101B LL101A marking code p60 SMD TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4

    Untitled

    Abstract: No abstract text available
    Text: SDB110Q SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description The SDB110Q Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


    Original
    PDF SDB110Q SDB110Q OD-523 25-AUG-10 KSD-D6D018-000

    SDB110Q

    Abstract: Marking s3 Schottky barrier S3 marking DIODE Marking Code s3 diode
    Text: SDB110Q SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description The SDB110Q Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


    Original
    PDF SDB110Q SDB110Q OD-523 25-AUG-10 KSD-D6D018-000 Marking s3 Schottky barrier S3 marking DIODE Marking Code s3 diode

    schottky diode sod-123 marking code 120

    Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
    Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1, MBR130T3 OD-123 1085C/W OD-123 schottky diode sod-123 marking code 120 MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120

    A2 DIODE SMD CODE MARKING

    Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
    Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.


    Original
    PDF C302S3-H BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 OT-323 BAT54 BAT54A BAT54C OT-323 BAT54S UL94V-0 A2 DIODE SMD CODE MARKING smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1

    Diode marking CODE 5M SOD

    Abstract: SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G
    Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1, MBR130T3 OD-123 Diode marking CODE 5M SOD SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G

    Diode SOd-123 marking cu

    Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
    Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1, MBR130T3 r14525 MBR130T1/D Diode SOd-123 marking cu MBR130T1 MBR130T3 Marking "s3" Schottky barrier

    130T specification

    Abstract: SM marking code marking code SM diode SM120T SOD-123T 1100T MARKING code S4 marking code Sm marking sm 120T
    Text: SM120T~SM1100T 20V to 100 V 1.0 Amp Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen-free SOD-123T FEATURES       Schottky barrier rectifier Guardring protection


    Original
    PDF SM120T SM1100T OD-123T OD-123T 03-Jan-2011 130T specification SM marking code marking code SM diode SOD-123T 1100T MARKING code S4 marking code Sm marking sm 120T

    SD101AW

    Abstract: SD101AWS SD101BW SD101BWS SD101CW SD101CWS Marking s3 Schottky barrier Marking "s3" Schottky barrier
    Text: SD101AWS/SD101BWS SD101CWS Surface Mount Schottky Barrier Diodes P b Lead Pb -Free SMALL SIGNAL SCHOTTKY DIODES 15m AMPERES 40-60 VOLTS Features: *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible Reverse Recovery Time *Low Capacitance


    Original
    PDF SD101AWS/SD101BWS SD101CWS OD-323 MIL-STD-202 004grams OD-323 24-Nov-09 SD101 SD101AWS SD101AW SD101AWS SD101BW SD101BWS SD101CW SD101CWS Marking s3 Schottky barrier Marking "s3" Schottky barrier

    SOD-123FL

    Abstract: Schottky Barrier Rectifiers S4 JEDEC SOD123FL schottky marking S4 Marking s3 Schottky barrier SOD-123FL marking s4
    Text: SM120FL ~ SM1100FL VOLTAGE 20 ~ 100 V 1.0 A Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOD-123FL Low forward surge current Ideal for surface mounted applications


    Original
    PDF SM120FL SM1100FL OD-123FL OD-123FL, MIL-STD-750, SM160FL SM130FL SM180FL 15-Dec-2010 SOD-123FL Schottky Barrier Rectifiers S4 JEDEC SOD123FL schottky marking S4 Marking s3 Schottky barrier SOD-123FL marking s4

    MBR130T1G

    Abstract: No abstract text available
    Text: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1G, NRVB130T1G, MBR130T3G MBR130T1/D MBR130T1G

    MBR130T1G

    Abstract: MBR130T3G
    Text: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1G, NRVB130T1G, MBR130T3G OD-123 MBR130T1/D MBR130T1G

    Untitled

    Abstract: No abstract text available
    Text: MBR130, NRVB130 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130, NRVB130 MBR130T1/D

    MBR130T1

    Abstract: MBR130T1G MBR130T3 MBR130T3G
    Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1, MBR130T3 OD-123 MBR130T1/D MBR130T1 MBR130T1G MBR130T3 MBR130T3G

    MBR130T1

    Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
    Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original
    PDF MBR130T1, MBR130T3 OD-123 MBR130T1/D MBR130T1 MBR130T1G MBR130T3 MBR130T3G S3M-G

    RB441Q

    Abstract: No abstract text available
    Text: Diode, Schottky barrier, leaded RB441Q-40 Dimensions Units : mm These glass mold-type diodes are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 . Features • ) available in DO-34 package » A c • part marking, see following table


    OCR Scan
    PDF RB441Q-40 DO-34 RB441Q-40 RB441Q