MARKING 10A8 Search Results

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

10A820

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

m39010

Abstract: 08BR10KM 10A36 10A331 10a471 10a470 10A181 10A27 10a131 10A221
Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

10A80

Contextual Info: 10A80VT»150V FuSy Molded similar to TO -220AC 0*^ FSHS10A08 Nihon Inter Electronics Corporation Specification Construction fflìÉ Application is a -yb yr Schottky Barrier Diode k High Frequency Rectification J f c f c Ï E MAXIMUM RATINGS Ta=25'C: Unless otherwise specified

PA66GF25

Abstract: PA6.6 - GF25 PA66-GF pa66-gf25
Contextual Info: T H I S D R A W I N G IS U N P U B L IS H E D R E LE A S E F O R P U B LIK A T IO N V E R T R A U L I C H E U N V E R O E F F E N T L I C H E Z E IC H N U N G FREI F U E R V E R O E F F E N T LIC H U N G c o p y r ig h t 2000 BY A M P IN C O R P O R A T ED

diode 10A10

Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 10A05 THRU 10A10 List List. 1 Package outline. 2

10A10 diode

Abstract: 10A4 diode P600 diode diode 10A6 diode 10A10 10A4 diode p diode p600 P600 10A10 P600 dc
Contextual Info: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded Plastic

p600

Abstract: diode p600
Contextual Info: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: P-600, Molded Plastic

10a10 diode

Contextual Info: 10A05 – 10A10 10A HIGH CURRENT STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data     

m39010

Contextual Info: QPL RF INDUCTORS - THRU HOLE ER10M TRADITIONAL Estabilished Reliability Wirewound, Molded, Level R Qualified, MIL-PRF-39010 Pb M39010/08 Phenolic Core /09 Powdered Iron Core /10 Ferrite Core PART NUMBER MIL PART L µH Q TEST SRF NUMBER MIN FREQ MHz MHZ MIN

10A8 SOT23-6

Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

10a201

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M TRADITIONAL Pb Molded Unshielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST SRF NUMBER NUMBER MIN FREQ. MHz MHz MIN. ER10M100*^ ER10M110J^ ER10M120*^

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE

ZXMN10A08E6

Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •

Contextual Info: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A

Contextual Info: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT Product Summary V BR DSS 100V Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V

10A8 SOT23-6

Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

10A8

Abstract: ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN10A08E6

Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

fs405

Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

10A8 SOT23-6

Abstract: ZXMN10A08E6
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

10A8 SOT23-6

Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.4 ID = 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

20e221

Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Contextual Info: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING