MARKING 150N3 Search Results

Contextual Info: STL150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID STL150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb

STL150N3LLH6

Contextual Info: STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 6x5 STripFET™ VI DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL150N3LLH6 30 V 0.002 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark

150N3

Abstract: BSO150N03
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel

150N3

Abstract: MARKING 150N3 BSO150N03 IEC61249-2-21 JESD22
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications PG-DSO-8

hv4274

Abstract: STL150N3LLH5
Contextual Info: STL150N3LLH5 N-channel 30 V - 0.0014 Ω - 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS STL150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

MARKING 150N3

Abstract: 150n3
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel

150n3

Abstract: BSO150N03
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)

150N3

Abstract: BSO150N03 JESD22
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1 • Qualified according to JEDEC for target applications • Dual n-channel

150N3

Abstract: BSO150N03 JESD22
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel

STD150N3LLH6

Abstract: STU150N3LLH6 150N3 095B4 JESD97 150N3LLH6 std150n3
Contextual Info: STD150N3LLH6 STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STU150N3LLH6 30 V 0.0033 Ω 80 A • 3 RDS(on) * Qg industry benchmark

STL150N3LLH5

Abstract: 150N3LLH5
Contextual Info: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS STL150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STL150N3LLH5

Contextual Info: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS STL150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STL150N3LLH6

Contextual Info: STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 6x5 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL150N3LLH6 30 V 0.0024 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■

STL150N3LLH6

Abstract: AM040 150N3
Contextual Info: STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL150N3LLH6 30 V 0.002 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STB150N3LH6 N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET VI DeepGATE™ Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max ID(1) PTOT STB150N3LH6 30 V 3.0 mΩ 80 A 110 W 1. Current limited by package. •

STD150N3LLH6

Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
Contextual Info: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω