MARKING 16E Search Results

Contextual Info: Organic Conductive Polymer Capacitors ORE Features ‧ 105℃, 5,000 hours assured ‧ Ultra low ESR with large permissible ripple current ‧ RoHS Compliance Marking color: Blue SPECIFICATIONS Items Category Temperature Range Capacitance Tolerance Performance

Contextual Info: Extract from the online catalog HC-B 16-ESTQ-2,5-OLOGO Order No.: 1605642 Male insert, 16-pos., QUICKON connection, marking 1-x Product notes WEEE/RoHS-compliant since: 08/01/2005

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC

Trak Microwave

Contextual Info: .19 MAX n ; - 31j 1 T jn n j I_ :j u H .25 .0 7 h 11 l0UTl .0 5 — I k .2 6 H .16 .0 6 - IN o □ STANDARD □ SPECIAL MATERIAL » BASE : F R -4 » COVER : VECTRA » MARKING : LASER » FINISH : SOLDER TIN DIRECTIONAL COUPLER IRAK MICROWAÆ DIRECTIONAL

Contextual Info: VS-16EDH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 16 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • Specified for output and snubber operation

Contextual Info: Extract from the online catalog EMG 90-DIO 16E/LP Order No.: 2954808 Lamp test module, 2 diodes with common cathode: with 8 pairs, for individual wiring Product notes WEEE/RoHS-compliant since:

90-DIO

Contextual Info: Extract from the online catalog EMG 90-DIO 16E/LP Order No.: 2954808 Lamp test module, 2 diodes with common cathode: with 8 pairs, for individual wiring Product notes WEEE/RoHS-compliant since:

Contextual Info: VS-16EDU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop

Contextual Info: VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop

Contextual Info: VS-16EDH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 16 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • Specified for output and snubber operation

si8406

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

SI7812DN

Contextual Info: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm

SI7812DN

Contextual Info: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm

smd transistor marking EY

Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Contextual Info: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

Si7812DN-T1-GE3

Abstract: Si7812 Si7812DN Si7812DN-T1-E3
Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7812DN

Contextual Info: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm

Si7812DN

Abstract: 16e marking Si7812DN-T1-E3 si7812 marking 16e
Contextual Info: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

Si7601DN

Abstract: si7601
Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Si7601DN

Abstract: si7601
Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Si7812DN

Abstract: Si7812DN-T1-GE3 Si7812DN-T1-E3
Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Si7601DN

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®