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    MARKING 19S Search Results

    MARKING 19S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 19S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    bond wire gold

    Abstract: No abstract text available
    Text: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)


    Original     		PDF OT-223C EIA-481-1-A Custom333-86-4 19-September bond wire gold

    Untitled

    Abstract: No abstract text available
    Text: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)


    Original     		PDF OD-882L 19-September EIA-481-1-A 28-September

    2N5248

    Abstract: jfet to 92 jfet marking code JFET APPLICATIONS
    Text: 2N5248 w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET The CENTRAL SEMICONDUCTOR 2N5248 is an N-Channel silicon JFET designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C


    Original     		PDF 2N5248 2N5248 19-September jfet to 92 jfet marking code JFET APPLICATIONS

    ELF450D

    Abstract: ELF450H ELF20N008A elf450j ELF228F elf227f ELF22V020A ELF20N010A ELF20N013A ELF20N016A
    Text: Line Filters • Series N, High N ● Type 20N, 21N Recommended PWB piercing plan Dimensions in mm not to scale 29.0±1.0 Marking 11.00±0.05 11.0±0.5 4 20.0±1.0 4.0±1.0 19.5±0.5 1 4–f1.2±0.1 2 19.50±0.05 3 4–f0.8±0.1 32.0±1.0 ● Standard Parts (Series N : 20N)


    Original     		PDF ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A ELF20N020A ELF20N022A ELF20N024A ELF450D ELF450H ELF20N008A elf450j ELF228F elf227f ELF22V020A ELF20N010A ELF20N013A ELF20N016A

    ELF850

    Abstract: ELF450A ELF850B ELF850C ELF860 ELF650H ELF860C ELF650B ELF850W ELF650M
    Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5  ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1


    Original     		PDF ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A ELF20N020A ELF20N022A ELF20N024A ELF850 ELF450A ELF850B ELF850C ELF860 ELF650H ELF860C ELF650B ELF850W ELF650M

    ELF850

    Abstract: ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C
    Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5  ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1


    Original     		PDF ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A ELF20N020A ELF20N022A ELF20N024A ELF850 ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C

    MARKING 19S

    Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
    Text: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF Q62702-F1088 OT-89 Dec-16-1996 MARKING 19S bfq 85 fgs npn Q62702-F1088 Marking Code FGs

    BFQ19S

    Abstract: MARKING 19S bfq 85
    Text: BFQ 19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05162 OT-89 Oct-12-1999 BFQ19S MARKING 19S bfq 85

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    ELF450H

    Abstract: ELF450D ELF22V025A ELF21V014S ELF22V070B ELF18D450D ELF20N013A ELF21V017S ELF22V040B ELF217
    Text: Line Filters Panasonic • Series N, High N • Type 20N, 21N Dimensions in mm not to scale Recommended PW B piercing plan Marking • Standard Parts (Series N : 20N) Part No. Marking ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A


    OCR Scan     		PDF ELF20N006A ELF21N006A ELF20N008A ELF21N008A ELF20N010A ELF21N010A ELF20N013A ELF21N013A ELF20N015A ELF21N015A ELF450H ELF450D ELF22V025A ELF21V014S ELF22V070B ELF18D450D ELF21V017S ELF22V040B ELF217

    transistor marking 19P

    Abstract: transistor wae
    Text: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060


    OCR Scan     		PDF OT-89 transistor marking 19P transistor wae

    npn transistor sot-89 MARKING AG

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel


    OCR Scan     		PDF OT-89 npn transistor sot-89 MARKING AG

    Untitled

    Abstract: No abstract text available
    Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications


    OCR Scan     		PDF 19S24 I95t/R89)

    Untitled

    Abstract: No abstract text available
    Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS


    OCR Scan     		PDF T4C16256/7/8/9 T4C16257/9 T4C16258/9 512-cycle 500mW 40-Pin

    ez920

    Abstract: LH5160N LH5160 LH5160HN-10L RC-1009B
    Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:


    OCR Scan     		PDF LH5160N8 EL02Y011 4-P-225 OP16-P-225 OP24-P-450 S0P28-P-45Q ez920 LH5160N LH5160 LH5160HN-10L RC-1009B

    Untitled

    Abstract: No abstract text available
    Text: R E U . /ED JUN 2 6 19S3 DOPUNT REVISIONS DESCRIPTION LETTER NO NOTES: A REVISED PER ECO 1. DISSIPATION FACTOR: .005 MAX @ 2 5 ' C, 1 kHZ. ER <£18 2. CAPACITANCE: 180 n F -2 2 0 nF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 2.5 kV RATED, 3.5 kV PROCESS FOR 2 HOURS @ 100* C AND


    OCR Scan     		PDF 204A252B000 7W970 200NF 2500WVDC M204A252B000

    1N589

    Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
    Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993


    OCR Scan     		PDF GD0D12S 003S612 ml-S-19S00/477b n1l-s-19s00/477a 1n58q2, 1ns804, 1ns806, 1ns807, 1h5809, 1ns811, 1N589 IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent

    MARKING 19S

    Abstract: sot marking code ZS
    Text: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1088 OT-89 MARKING 19S sot marking code ZS

    LH5160

    Abstract: No abstract text available
    Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:


    OCR Scan     		PDF LH5160N8 EL02Y011 4-P-225 OP16-P-225 OP24-P-450 S0P28-P-45Q LH5160

    transistor 1p3

    Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
    Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


    OCR Scan     		PDF 23SbGS BFQ19P 62702-F1060 OT-89 D2Hm35 transistor 1p3 MARKING 19S ic MARKING FZ F1060 e23s