MARKING 1ED Search Results

tc 144e

Abstract: 144EK
Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4

94011

Contextual Info: î PC BOARD VERSIONS PRODUCT NR PCB THICKNESS 1.6 8 9 Q 9 3 -X 0 2 2 .4 8 9 0 9 3 - X 12 î î î î P R FS S -FIT HOLES HOLE DIAMETER AFTER PLATING DRIl 1ED HOLE COPPER PLATING SnPb PLATING DIM A 2 .7 3 3 .5 3 r î î î I 0 .6 5 -0 .8 0 0 .8 1 -0 .8 6 0 .0 2 5 MIN.

PG-DSO-16-15

Contextual Info: Target Datasheet, Version 1.0, May 2006 EiceDRIVER 1ED020I12-S Single IGBT Driver IC Power Management & Drives N e v e r s t o p t h i n k i n g . 1ED020I12-S Revision History: 2006-05-19 Version 1.0 Previous Version: Page Subjects major changes since last revision

Contextual Info: Target Datasheet, Version 1.1, July 2006 EiceDRIVER 1ED020I12-S Single IGBT Driver IC Power Management & Drives N e v e r s t o p t h i n k i n g . 1ED020I12-S Revision History: 2006-07-21 Previous Version: Target Datasheet 1.0 Page Subjects major changes since last revision

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

jd 1803

Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,

SB002-15SPA

Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Contextual Info: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

dash 2 b-5

Abstract: 734D-735A MARKING 1ED
Contextual Info: T A B LE DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USED FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION 1 REV B DASH NO CABLE/4\ -025-026 -026-026 -025-025 734D-735A

svc253

Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Contextual Info: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package

IC1530

Abstract: TA4100F
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4100F SILICON MONOLITHIC O UHF VHF RF,MIX APPLICATION MAXIMUM RATING T . = 2 5°C SYMBOL UNIT CHARACTERISTICS RATING V C o l l e c t o r - B a s e V o l t a g e V C BO 1 0 V C o lle c to r -E m itte r Voltage V C E O

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

5962-8752401PX

Abstract: FD700 UA9637ARM
Contextual Info: DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer _ 1. i _ _ SCOPE 1.1 Scope. This drawing describes device requirements fo r cla ss B u lc r o c lrc u lts in accordance with

PBT-GF20

Abstract: TYCO PBT-GF20 PBT-GF-20
Contextual Info: T H I S D R AW I NG I S U N P U B LI SHED. DIFFUSION RESTREINTE C O P Y R I G HT 2 0 0 6 ßL 2 006 R E L E A S E D F OR P U B L I C A T I O N LIBRE A LA D IF F U S IO N BY TYCO ELECTRONICS CORPORATION. LOC R E V I S I O N S D I ST 00 L RIGHTS RESERVED TOUS D R O I T S

54LS261

Contextual Info: ± REVISIO N S DESCRIPTION LTR Delete minimum limits from I jL A and propagation delays. Change 1^ maximum lim it. DATE APPROVED 16 Mar 1986 fylCdJiouM Ï0L. Editorial changes throughout. Prepared in accordance with D0D-STD-100 REV PAGE Selected item drawing

54LS261

Abstract: MARKING 1F2
Contextual Info: ± REVISIO N S DESCRIPTION LTR Delete minimum limits from I jL A and propagation delays. Change 1^ maximum lim it. DATE APPROVED 16 Mar 1986 fylCdJiouM Ï0L. Editorial changes throughout. Prepared in accordance with D0D-STD-100 REV PAGE Selected item drawing

mARKING CODE 2aj

Abstract: mARKING CODE LA4 500C
Contextual Info: REVISIONS DATE YR-MO-OA DESCRIPTION LTR APPROVED REV SH EET REV SH EET D E U RE•V C T A T 1 IO O F SH EETS I SH EET 1 2 3 6 7 8 9 11 10 PREAAREX) BY PM ICN/A »u D EFEN SE ELECTRO N ICS SU PPLY CEN TER DAYTON, OHIO 45444 y C H E C K E IU ÍY _ STANDARDIZED

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Remove vendor CAGE number 50088. Add vendor, CAGE number 34335. Device type 01 not ava ilab le from approved source. Add device type 04. E d ito ria l changes throughout. Convert to m ilita ry drawing formate. Added case X.

Contextual Info: SNAP-IN ELECTROLYTIC CAPACITORS Hitachi AIC Inc HU3 SERIES </> INTRODUCTION HU3 Series Snap-in Aluminum Electrolytic capacitors are specially designed for high temperature applications up to 105 °C. These capacitors are suitable for industrial and commercial

26ls32b

Abstract: AM26LS32B/BEA 1N3064 1N916
Contextual Info: D ISTRIBUTIO N STA TEM EN T A. Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer 1. SCOPE n s 1ro fo rr tne the1use use*"o off ” MIL-STD-883 M Il"ST[ S8831"in 1n18 S S -î8 m^ r o cwî^c

Contextual Info: T O SH IB A 02CZ2.0-02CZ47 TOSHIBA ZENZER DIODE SILICON EPITAXIAL PLANAR TYPE 02CZ2.0-02CZ47 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS. • • Small Package : SC-59 Nominal Voltage Tolerance About ±2,5% 4.3V~24V

MIL-M-3B510

Abstract: ECL binary Counter
Contextual Info: REVISIONS LTR DESCRIPTION DATE VR-MO-M Add fig u re 3. Technical changes in 1 .3 , 1 .4 , and tables I and I I . Change in terminal connections. E d ito ria l changes throughout. APPROVED 89 AUG 28 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 3 PMIC N/A

26LS32B

Abstract: 1N3064 1N916 5962-87616-01EX
Contextual Info: D IS T R IB U T IO N S T A T E M E N T A. Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 Powered by ICminer.com Electronic-Library Service CopyRight 2003 1. SCOPE n s 1ro fo rr tne the 1 use use*"o off ” MIL-STD-883 M Il"ST[ S 88 3 1"in