MARKING 1N DIODE Search Results

C456A

Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel

transistor c 458

Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND

diode st 4148

Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914

diode t 4148

Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND

Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP

1N4448R

Contextual Info: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table

diode do35 C 4148

Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

LL-34

Abstract: diode 914a DC COMPONENTS 4148
Contextual Info: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band

diode t 4148

Abstract: t 4148 diode diode f 4148 diode 4148 4148 LL-34
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK

diode t 4148

Abstract: diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode FDLL4148
Contextual Info: Semiconductor' 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 L L -3 4 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

diode 4148

Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

diode f 4148

Abstract: 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

MINI-MELF DIODE green CATHODE

Abstract: DC COMPONENTS 4148
Contextual Info: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band LL-34 COLOR BAND MARKING DEVICE SOD80 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND

diode st 4148

Abstract: ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode 914/A/B FDLL4148
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND

diode pj 916

Abstract: IC la 4148
Contextual Info: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

diode t 4148

Abstract: 914/A/B FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B 1n916b
Contextual Info: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D LL914 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B F D L L 4 1 48 F D L L 44 48 1ST BAND 2ND BAND B LACK B LACK BROWN B LACK BLACK BROW N BLACK BROW N BROW N GRAY

BD1501

Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B

1N4148 SOD-80

Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
Contextual Info: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23

diode 4483

Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
Contextual Info: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .

1N4770

Contextual Info: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol

diode 4483

Abstract: 1N4471
Contextual Info: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.

DIODE 1N4004G

Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

IN3155

Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Contextual Info: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values