MARKING 1P TRANSISTOR SOT23 Search Results

MARKING 1P TRANSISTOR SOT23 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

MARKING 1P TRANSISTOR SOT23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING 1P Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
kst2222a Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	KST2222A OT-23 KST2222A	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
KST2222A Abstract: transistor kst2222a Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	KST2222A OT-23 KST2222A transistor kst2222a	PDF
Transistor hFE CLASSIFICATION Marking CE Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P Contextual Info: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant	Original	MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P	PDF
marking 1p sot23 Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p Contextual Info: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p	PDF
Contextual Info: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	FMBT2222A FMBT2222A OT-23 FMMBT2907A) -55to V50mA 500mA 100MHz 150mA	PDF
UTC 225 Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE	Original	MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225	PDF
1P NPN Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE	Original	MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC	PDF

TRANSISTOR code marking 1P 3 Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23 Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate	Original	MMBT2222A 300mW, OT-23 MIL-STD-202, TRANSISTOR code marking 1P 3 marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23	PDF
Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant	Original	MMBT2222A 300mW, OT-23 MIL-STD-202, C/10s	PDF
sc59 Abstract: BTN2222AN3 BTP2907AN3 on semiconductor marking code 1P Contextual Info: CYStech Electronics Corp. Spec. No. : C227N3 Issued Date : 2003.06.11 Revised Date : 2006.06.02 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3 Description • The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the	Original	C227N3 BTN2222AN3 BTN2222AN3 OT-23/SC-59 BTP2907AN3 OT-23 UL94V-0 sc59 BTP2907AN3 on semiconductor marking code 1P	PDF
Contextual Info: Small Signal Transistor MMBT2222A-HF NPN RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic.	Original	MMBT2222A-HF OT-23 OT-23, MIL-STD-750, QW-JTR08	PDF
Contextual Info: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00)	Original	MMBT2222A-G OT-23 OT-23, MIL-STD-750, Collector-B00 QW-BTR30	PDF
TRANSISTOR SMD MARKING CODE 1P Abstract: smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T Contextual Info: SMD General Purpose Transistor NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:	Original	MMBT2222A OT-23 OT-23, MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T	PDF
TRANSISTOR SMD MARKING CODE 1P Abstract: 1P smd transistor F318 transistor smd marking NA sot-23 Contextual Info: SMD GENERAL PURPOSE TRANSISTOR NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208	Original	MMBT2222A OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P 1P smd transistor F318 transistor smd marking NA sot-23	PDF
MARKING CODE 1P Abstract: CODE 1P Contextual Info: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃	Original	MMBT2222A MMBT2907A) OT-23 2002/95/EC 500mA 150mA 100MHz 150mA Jun-2009, MARKING CODE 1P CODE 1P	PDF
TRANSISTOR 1P SOT23 Abstract: TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23 Contextual Info: @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range	Original	MMBT2222ALT1 OT-23 OT-23 150mA 500mA, 100MHz MMBT2222A TRANSISTOR 1P SOT23 TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO:	Original	OT-23 MMBT2222ALT1 OT-23 150mA 500mA, 100MHz MMBT2222A	PDF

MARKING 1P TRANSISTOR SOT23 Search Results

MARKING 1P TRANSISTOR SOT23 Result Highlights (5)

MARKING 1P TRANSISTOR SOT23 Datasheets Context Search

MARKING 1P

kst2222a

KST2222A

Transistor hFE CLASSIFICATION Marking CE

marking 1p sot23

UTC 225

1P NPN

TRANSISTOR code marking 1P 3

sc59

TRANSISTOR SMD MARKING CODE 1P

TRANSISTOR SMD MARKING CODE 1P

MARKING CODE 1P

TRANSISTOR 1P SOT23