MARKING 1R NPN Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon z Pb-Free Package is Available. LMBT5088LT1G LMBT5089LT1G ORDERING INFORMATION Device Marking LMBT5088LT1G 1Q LMBT5089LT1G LMBT5088LT3G 1R 1Q LMBT5089LT3G 1R Shipping 3000/Tape & Reel 3000/Tape & Reel

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

c 5088

Abstract: CMBT5088 CMBT5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS

c 5088

Abstract: CMBT5088 CMBT5089
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

BCW60BLT1

Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Contextual Info: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.

marking code CB en ic

Contextual Info: KST5088/5089 NPN EPITAXIAL SILICO N TRANSÌSTOR LOW NOISE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta = 25°C r Characteristic Symbol Collector-Base Voltage Rating Unit 35 30 V V 30 25 4.5 50 350 150 •V V cB O KST5088 KST5089 Collector-Emitter Voltage

transistor H-R

Abstract: KST5088 KST5089 marking SAI
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage

100khz 5v transistor npn

Abstract: KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST5088/5089 LOW NOISE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage : KST5088 : KST5089 C ollector-E m ltter Voltage : KST5088 : KST5089 Em itter-Base Voltage C ollecto r C urrent

Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

100khz 5v transistor npn

Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation

BC 5089

Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTO R LOW NO ISE TRANSISTO R ABSO LU TE MAXIMUM RATINGS TAB251C Characteristic Sym bol Cllector-Base Voltage K ST 5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: Product specification MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

marking qd sc59

Abstract: rn1425 RN1426
Contextual Info: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

Contextual Info: MCP6401/1R/1U/2/4/6/7/9 1 MHz, 45 µA Op Amps Features Description • • • • • • The Microchip Technology Inc. MCP6401/1R/1U/2/4/6/7/9 family of operational amplifiers op amps has low quiescent current (45 µA, typical) and rail-to-rail input and output

IMX6

Abstract: MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z
Contextual Info: IMX6 Transistor, dual, NPN Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: X6 • package contains two independent NPN transistors (2SC2413K) • same size as UMT3 (UMT, SC-70) so same placement machine can be

VSS010

Abstract: marking AAW VSS030
Contextual Info: MCP6401/1R/1U/2/4/6/7/9 1 MHz, 45 µA Op Amps Features Description • • • • • • The Microchip Technology Inc. MCP6401/1R/1U/2/4/6/7/9 family of operational amplifiers op amps has low quiescent current (45 µA, typical) and rail-to-rail input and output

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

marking 1A

Abstract: TMPT918 pt2222a
Contextual Info: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0