MARKING 239 SOT Search Results

TRANSISTOR SMD CODE 339

Abstract: 339 marking code SMD transistor signetics linear package marking 80602 LM339ADT lm339n Linear Integrated Circuit Using lm339n, AC Voltage comparator circuit diagram 9336 559 70602 transistor 2N2222 SMD configuration Quad TRANSISTOR smd
Contextual Info: INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook Philips Semiconductors 1995 Nov 27 Philips Semiconductors Product specification LM139/239/239A/339/339A /LM2901/MC3302 Quad voltage comparator

pa sot-363

Contextual Info: Central" CMKSH-3T Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T type contains three 3 Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package. This ULTRAmini™ device has

JVs sot23

Abstract: BAS116
Contextual Info: SIEM EN S Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 ° °- ^ 1-EHA07002

TRANSISTOR SMD MARKING CODE 360

Abstract: 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking
Contextual Info: Philips Semiconductors Product specification Low power dual voltage comparator LM193/A/293/A/393/A/2903 DESCRIPTION PIN CONFIGURATION The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0mV

Contextual Info: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W

Contextual Info: Product specification Philips Semiconductors S chottky barrier d io d e BAT17 FEATURES D ESCRIPTIO N • Low forward voltage Planar Schottky barrier diode in a SOT23 small plastic S M D package. • Small SM D package • Low capacitance. AP PLIC A T IO N S

AMI siemens

Contextual Info: SIEMENS BSP 295 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 . 8 . . . 2 .0 V V) Type h 1.8 A BSP 295 50 V Type BSP 295 Ordering Code Q67000-S066 ^DS(on) Package Marking 0.3 n SOT-223 BSP 295 Tape and Reel Information

Contextual Info: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature

IRLML2402

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω

MARKING 239 SOT

Contextual Info: Central CMKD6263DO Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • DUAL OPPOSING DO SCHOTTKY DIODES • HIGH VOLTAGE (70V) • LOW FORWARD VOLTAGE • GALVANICALLY ISOLATED DESCRIPTION: The Central Semiconductor CMKD6263DO incorporates two galvanically isolated, High Voltage, low Vp

Contextual Info: BSP170P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

bsp170p

Contextual Info: BSP170P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

5003N

Contextual Info: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

Contextual Info: Central CM PTA13 CM PTA14 NPN CM PTA63 CM PTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

BSP170

Abstract: JESD22-A114 L6327 BSP 135 L6327
Contextual Info: BSP 170 P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information

Contextual Info: BSP 170 P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency

Philips LQFP MARKING CODE

Abstract: Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES

SC19a

Abstract: SC19 LTE21009R BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A

marking RJ3 SOT23

Abstract: SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf
Contextual Info: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low-distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high-volume wireless applications ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A

sot-23 MARKING CODE ZA

Abstract: LDO marking ZA EUP7915 DS7915 SOT23-5 regulator code 02 za sot23 EUP791528VIR1 EUP791518VIR1 marking CODE E1 sot23-5 MARKING ZA 5PIN
Contextual Info: EUP7915 150mA Low-Noise LDO in SOT23-5 DESCRIPTION FEATURES The EUP7915 is an efficient, CMOS voltage regulator optimized for ultra-low-noise applications. It offers high output accuracy, extremely low dropout voltage low ground current and fast start-up time.

2761 l transistor

Abstract: transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761
Contextual Info: TELEFUNKEN ELECTRONIC 17E D fi'îEOQ'ïb ODOTbSB M • ALG6 m S 921TS • S 923 TS r - 3i-i-r Silicon PNP Epitaxial Planar RF Transistors Applications; For telephone sets, telecommunication circuits, video driver and power stages in TV receivers and monitors and general in circuits with high supply voltage

Contextual Info: PNP Silicon Darlington Transistors 32E D • flE 3 b 3 S G SIEMENS/ • • • • BCV 26 Q01bbb2 3 H SIP BCV46 SPCLi SEMICONDS For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type a B C V 26