MARKING 23A MOSFET Search Results

MARKING 23A MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

MARKING 23A MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRLR2908 Abstract: IRLU2908 Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V	Original	IRLR2908 IRLU2908 AN-994. IRLR2908 IRLU2908	PDF
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V	Original	IRLR2908 IRLU2908 AN-994.	PDF
IRLR2908 Abstract: IRLU2908 MOSFET IRF 380 Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V	Original	IRLR2908 IRLU2908 AN-994. IRLR2908 IRLU2908 MOSFET IRF 380	PDF
IRFP23N50L Abstract: 94230B 035H IRFPE30 Contextual Info: PD - 94230B IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V 170ns	Original	94230B IRFP23N50L 170ns O-247AC IRFPE30 O-247AC IRFP23N50L 94230B 035H IRFPE30	PDF
IRF3707 Contextual Info: PD - 93938 PROVISIONAL IRF3708 IRF3708S IRF3708L SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 30V 0.012Ω 58A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS	Original	IRF3708 IRF3708S IRF3708L O-220AB IRF3707 IRF3707S O-262 IRF3707L	PDF
PD-95660 Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed	Original	PD-95660 IRL3302PbF O-220 O-220AB. O-220AB PD-95660	PDF
Contextual Info: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
IRLR2908 Abstract: IRLU2908 IRLR2908PbF Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	5552A IRLR2908PbF IRLU2908PbF AN-994. IRLR2908 IRLU2908 IRLR2908PbF	PDF
IRLR2908 Abstract: IRLU2908 IRLR2908PbF Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	5552A IRLR2908PbF IRLU2908PbF AN-994. IRLR2908 IRLU2908 IRLR2908PbF	PDF
Contextual Info: PD - 93935 PROVISIONAL IRFR3708 IRFU3708 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.0125Ω 57A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS	Original	IRFR3708 IRFU3708	PDF
irf5210s Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	97049B IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s	PDF
irf5210s Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s	PDF
Contextual Info: PD - 93934 PROVISIONAL IRFR3707 IRFU3707 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.0125Ω 57A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS	Original	IRFR3707 IRFU3707	PDF

AN-994 Abstract: EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	5552A IRLR2908PbF IRLU2908PbF AN-994. AN-994 EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF	PDF
U120 Abstract: IRLR2908PbF Contextual Info: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V	Original	95552B IRLR2908PbF IRLU2908PbF AN-994. U120 IRLR2908PbF	PDF
IRLR2908PbF Contextual Info: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V	Original	95552B IRLR2908PbF IRLU2908PbF AN-994. IRLR2908PbF	PDF
Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L	Original	7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418.	PDF
IRLR2908PbF Contextual Info: PD - 95552 IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax	Original	IRLR2908PbF IRLU2908PbF AN-994. IRLR2908PbF	PDF
60v 39a to220 Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed	Original	PD-95660 IRL3302PbF O-220 O-220AB 60v 39a to220	PDF
IRL3302 Contextual Info: PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching D VDSS = 20V RDS on = 0.020W G Description These HEXFET Power MOSFETs were designed	Original	IRL3302 O-220 IRL3302	PDF
Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)	Original	IRF6893MPbF IRF6893MTRPbF	PDF
Contextual Info: International • massmss oois^o35^* inr pd-9.54ob IR F P 254 Rectifier HEXFET Power MOSFET • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling	OCR Scan	O-247 O-220 IRFP254	PDF
Contextual Info: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination	Original	SSDF9504 O-252-4L SSDF9504 14-Nov-2012	PDF

MARKING 23A MOSFET Search Results

MARKING 23A MOSFET Result Highlights (5)

MARKING 23A MOSFET Datasheets Context Search

IRLR2908

IRLR2908

IRFP23N50L

IRF3707

PD-95660

IRLR2908

IRLR2908

irf5210s

irf5210s

AN-994

U120

IRLR2908PbF

IRLR2908PbF

60v 39a to220

IRL3302