MARKING 2A SOT363 Search Results
MARKING 2A SOT363 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING 2A SOT363 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value |
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LMBT3906TT1 3000/Tape SC-89 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G |
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LMBT3906LT1G 3000/Tape LMBT3906LT3G 10000/Tape 236AB) | |
74LVC2G06DW-7Contextual Info: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V |
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74LVC2G06 74LVC2G06 OT363 OT26/363 DS35161 74LVC2G06DW-7 | |
Contextual Info: 74LVC2G17 DUAL SCHMITT TRIGGER BUFFER Description Pin Assignments The 74LVC2G17 is a dual Schmitt trigger buffer gate with standard push-pull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The SOT26 SOT363 are Future |
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74LVC2G17 74LVC2G17 OT363 OT26/363 DS35164 | |
dual inverter
Abstract: 74LVC2G04DW-7 Dual Inverter Gate
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74LVC2G04 74LVC2G04 OT363 OT26/363 74LVC2G04. DS35160 dual inverter 74LVC2G04DW-7 Dual Inverter Gate | |
74AUP2G3404GWContextual Info: 74AUP2G3404 Low-power buffer and inverter Rev. 1 — 22 August 2012 Product data sheet 1. General description The 74AUP2G3404 is a single buffer and single inverter. Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall |
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74AUP2G3404 74AUP2G3404 74AUP2G3404GW | |
Contextual Info: UESD6V8L5A6 Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5A6 SC70-6 / SC88 / SOT363 General Description The UESD6V8L5A6 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional |
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SC70-6 OT363 | |
Contextual Info: MA2403C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2403C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load |
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MA2403C10000000 MA2403C1 OT363 SC-70-6L D032610 OT-363 3000pcs | |
74LVC2GU04
Abstract: 74LVC2GU04GM 74LVC2GU04GV 74LVC2GU04GW sot363 marking DATE code
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74LVC2GU04 74LVC2GU04 JESD22-A114F JESD22-A115-A 74LVC2GU04GM 74LVC2GU04GV 74LVC2GU04GW sot363 marking DATE code | |
transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
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3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor | |
DSS4240YContextual Info: DSS4240Y Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available DSS5240Y Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) |
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DSS4240Y DSS5240Y) 00V-MM, AEC-Q101 OT363 J-STD-020 MIL-STD-202, DS31682 DSS4240Y | |
Contextual Info: DSS5240Y 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) |
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DSS5240Y 00V-MM, OT-363 J-STD-020 MIL-STD-202, DS31683 | |
Contextual Info: DSS5240Y 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) |
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DSS5240Y 00V-MM, OT-363 J-STD-020 MIL-STD-202, DS31683 | |
Contextual Info: DSS4240Y Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available DSS5240Y Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) |
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DSS4240Y DSS5240Y) 00V-MM, AEC-Q101 OT363 J-STD-020 DS31682 | |
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74LVC2G06
Abstract: 74LVC2G06GM 74LVC2G06GV 74LVC2G06GW JESD22-A114E
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74LVC2G06 74LVC2G06 74LVC2G06GM 74LVC2G06GV 74LVC2G06GW JESD22-A114E | |
74LVC2G07GW
Abstract: 74LVC2G07GV 74LVC2G07 74LVC2G07GF 74LVC2G07GM JESD22-A114E
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74LVC2G07 74LVC2G07 74LVC2G07GW 74LVC2G07GV 74LVC2G07GF 74LVC2G07GM JESD22-A114E | |
Contextual Info: MA2401C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2401C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load |
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MA2401C10000000 MA2401C1 D032610 OT-363 3000pcs 15000pcs | |
Contextual Info: MA2404C1000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load |
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MA2404C1000000 MA2404C1 OT363 SC-70-6L D032610 OT-363 3000pcs | |
MARKING CODE YAContextual Info: 74LVC2G34 Dual buffer gate Rev. 03 — 21 March 2007 Product data sheet 1. General description The 74LVC2G34 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. These features allow the use of |
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74LVC2G34 74LVC2G34 MARKING CODE YA | |
74AUP2G0604GWContextual Info: 74AUP2G0604 Low-power inverting buffer with open-drain and inverter Rev. 1 — 23 November 2012 Product data sheet 1. General description The 74AUP2G0604 is a single inverting buffer with open-drain output and a single inverter. It features two input pins nA , an output pin (2Y) and an open-drain output pin |
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74AUP2G0604 74AUP2G0604 thr18 74AUP2G0604GW | |
Contextual Info: MA2520C10000000 Dual N-Ch 20V Fast Switching MOSFET s General Description Product Summery The MA2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load |
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MA2520C10000000 MA2520C1 OT363 OT-363 D032610 3000pcs 15000pcs | |
Contextual Info: 74AUP2G3407 Low-power single buffer; single buffer with open-drain Rev. 1 — 18 October 2013 Product data sheet 1. General description The 74AUP2G3407 is a single buffer and a single buffer with open-drain output. It features two input pins nA , an output pin (1Y) and an open-drain output pin (2Y). |
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74AUP2G3407 74AUP2G3407 | |
Contextual Info: 74AUP2G07 Low-power dual buffer with open-drain output Rev. 01 — 21 November 2006 Product data sheet 1. General description The 74AUP2G07 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. |
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74AUP2G07 74AUP2G07 74AUP2G4 | |
74LVC2G34
Abstract: 74LVC2G34GF 74LVC2G34GM 74LVC2G34GV 74LVC2G34GW JESD22-A114E
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74LVC2G34 74LVC2G34 74LVC2G34GF 74LVC2G34GM 74LVC2G34GV 74LVC2G34GW JESD22-A114E |