MARKING 2L SOT23 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS

1N914

Abstract: LMBT5401LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L

MARKING 2L

Abstract: MMBT5401 MMBT5551
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

2L smd transistor

Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

MMBT5401 SOT-23

Abstract: marking 2L 2l sot23 marking transistor marking 2L
Contextual Info: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5551 Ideal for medium power amplification and switching — MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2L smd transistor

Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

2L smd transistor

Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

DTC124XK equivalent

Contextual Info: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu­ ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT

MMBT5401

Abstract: 2L d 1N914
Contextual Info: MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 C B Top View 1 1 MARKING 2 K E 2 2L

Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)

2L smd transistor

Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
Contextual Info: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G S-LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

LR431

Abstract: A7TA LR431BLT1 WZR device marking lr431 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: LESHAN RADIO COMPANY, LTD. LR431AP R H LT1G LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LV D WKUHHWHUPLQDO DGMXVWDEOH  LRC L RR1APHLT1G  DJXDUDQWHHGWKHUPDO VWDELOLW\  RYHU  DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. LINEAR INTEGRATED CIRCUIT LTL431APHLT1G  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21 7KH LV D WKUHHWHUPLQDO DGMXVWDEOH  LTL431APHLT1G  DJXDUDQWHHGWKHUPDO VWDELOLW\  RYHU  DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

BTA1514N3

Abstract: BTC3906N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage.

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LTL431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LTL LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\